公开(公告)号：AU2002357317A1

公开(公告)日：2003-06-30

申请号：AU2002357317

申请日：2002-12-17

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  MA QING ,  RAO VALLURI

IPC: H03H3/02 ,  H03H9/17

Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

公开(公告)号：DE602005012385D1

公开(公告)日：2009-03-05

申请号：DE602005012385

申请日：2005-04-13

Applicant: INTEL CORP

Inventor： MA QING ,  WANG LI-PENG ,  SHIM DONG ,  RAO VALLURI

IPC: H03H3/04 ,  H01L41/08 ,  H03H9/205

Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

公开(公告)号：AT421191T

公开(公告)日：2009-01-15

申请号：AT05737419

申请日：2005-04-13

Applicant: INTEL CORP

Inventor： MA QING ,  WANG LI-PENG ,  SHIM DONG ,  RAO VALLURI

IPC: H03H3/04 ,  H01L41/08 ,  H03H9/205

Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

公开(公告)号：AT382205T

公开(公告)日：2008-01-15

申请号：AT03016929

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：MY134774A

公开(公告)日：2007-12-31

申请号：MYPI20031060

申请日：2003-03-25

Applicant: INTEL CORP

Inventor： MA QING ,  RAO VALLURI ,  WANG LI-PENG ,  HECK JOHN ,  TRAN QUAN

IPC: H01L21/30 ,  B81B7/00

Abstract: A MICROELECTROMECHANICAL SYSTEM (32) MEY BE ENCLOSED IN A HERMETIC CAVITY (44) DEFINED BY JOINED, FIRST AND SECOND SEMICONDUCTOR STRUCTURES (14, 12). THE JOINED STRUCTURES (14, 12) MAY BE SEALED BY A SOLDER SEALING RING (18), WHICH EXTENDS COMPLETELY AROUNS THE CAVITY (44). ONE OF THE SEMICONDUCTOR STRUCTURES (14, 12) MAY HAVE THE SYSTEM (32) FORMED THEREON AND AN OPEN AREA (38) MAY BE FORMED UNDERNEATH SAID SYSTEM (32). THAT OPEN AREA (38) MAY BE FORMED FROM THE UNDERSIDE OF THE STRUCTURE (14, 12) AND MAY BE CLOSED BY COVERING WITH A SUITABLE FILM A SUITABLE FILM (20) IN ONE EMBODIMENT.(FIG 1)

公开(公告)号：HK1093553A1

公开(公告)日：2007-03-02

申请号：HK07100264

申请日：2007-01-08

Applicant: INTEL CORP

Inventor： RAO VALLURI ,  MA QING ,  YAMAKAWA MINEO ,  BERLIN ANDREW ,  WANG LI-PENG ,  ZHANG YUEGANG

IPC: G01N20060101 ,  G01N29/02 ,  G01N29/036 ,  G01N29/34 ,  G01N33/543

公开(公告)号：AU2003298535A1

公开(公告)日：2004-05-04

申请号：AU2003298535

申请日：2003-08-01

Applicant: INTEL CORP

Inventor： BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL ,  WANG LI-PENG

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H3/00

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：DE10333782A1

公开(公告)日：2004-03-18

申请号：DE10333782

申请日：2003-07-24

Applicant: INTEL CORP

Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

IPC: H03H9/24 ,  H03H3/02 ,  H03H9/56 ,  H03H9/15 ,  H03H9/54

Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

公开(公告)号：AU2003218453A1

公开(公告)日：2003-10-20

申请号：AU2003218453

申请日：2003-03-27

Applicant: INTEL CORP

Inventor： MA QING ,  RAO VALLURI ,  WANG LI-PENG ,  TRAN QUAN ,  HECK JOHN

IPC: B81B7/00 ,  B81C3/00