Abstract:
Disclosed herein are electronic components having three-dimensional capacitors disposed in a metallization stack, as well as related methods and devices. In some embodiments, for example, an electronic component may include: a metallization stack and a capacitor disposed in the metallization stack wherein the capacitor includes a first conductive plate having a plurality of recesses, and a second conductive plate having a plurality of projections, wherein individual projections of the plurality of projections extend into corresponding individual recesses of the plurality of recesses without contacting the first conductive plate.
Abstract:
An apparatus is described that includes a redistribution layer and a semiconductor die on the redistribution layer. An electrically conductive layer resides over the semiconductor die. A compound mold resides over the electrically conductive layer.
Abstract:
Embodiments of the disclosure are directed to a chip package that includes a base that includes a redistribution layer; an optical transducer circuit element on the base electrically connected to the redistribution layer; an optical element adjacent to the optical transducer circuit element and at an edge of the base; and an encasement encasing the optical transducer circuit element and a portion of the optical element, wherein one side of the optical element is exposed at an edge of the encasement and at the edge of the printed circuit board.
Abstract:
A method includes aligning a wire with a package body having a contact pad and moving the wire through the package body to form electrical contact with the contact pad.
Abstract:
A system-in-package device includes at least three electrical device components arranged in a common package. A first electrical device component includes a first vertical dimension, a second electrical device component includes a second vertical dimension and a third electrical device component comprises a third vertical dimension. The first electrical device component and the second electrical device component are arranged side by side in the common package. Further, the third electrical device component is arranged on top of the first electrical device component in the common package. At least a part of the third electrical device component is arranged vertically between a front side level of the second electrical device component and a back side level of the second electrical device component.
Abstract:
Embodiments of the present disclosure relate to a cooler for semiconductor devices. The semiconductor device may be electrically coupleable to a power source. The device may generate heat when the power source supplies power to the device during use of the device. The cooler may be coupled to one or more surfaces of the device. The cooler may include a hydrophilic material to adsorb water from ambient air. During operation of the device, the cooler may cool the device by conduction of heat away from the device to the cooler. The cooler may include water that is evaporated during use of the device to increase cooling capacity of the cooler. The cooler may be recharged with water from humidity in air when the device is not operated or operated at a lower power level. Other embodiments may be described and/or claimed.
Abstract:
Embodiments herein may relate to a package with a dielectric layer having a first face and a second face opposite the first face. A conductive line of a patterned metal redistribution layer (RDL) may be coupled with the second face of the dielectric layer. The line may include a first portion with a first width and a second portion directly coupled to the first portion, the second portion having a second width. The first portion may extend beyond a plane of the second face of the dielectric layer, and the second portion may be positioned between the first face and the second face of the dielectric layer. Other embodiments may be described and/or claimed.
Abstract:
Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a die having a first side and a second side disposed opposite to the first side. The IC package may further include an encapsulation material encapsulating at least a portion of the die and having a first surface that is adjacent to the first side of the die and a second surface disposed opposite to the first surface. In embodiments, the second surface may be shaped such that one or more cross-section areas of the IC package are thinner than one or more other cross-section areas of the IC package. Other embodiments may be described and/or claimed.
Abstract:
Stress buffer layers for integrated microelectromechanical systems (MEMS) are described. For example, a semiconductor package includes a substrate having first and second surfaces, the second surface having an array of external conductive contacts. A microelectromechanical system (MEMS) component is disposed above the first surface of the substrate. A buffer layer is disposed above the MEMS component, the buffer layer having a first Young's modulus. A mold compound is disposed above the buffer layer, the mold compound having a second Young's modulus higher than the first Young's modulus.
Abstract:
Embodiments of the present disclosure are directed towards an integrated circuit (IC) package including a die having a first side and a second side disposed opposite to the first side. The IC package may further include an encapsulation material encapsulating at least a portion of the die and having a first surface that is adjacent to the first side of the die and a second surface disposed opposite to the first surface. In embodiments, the second surface may be shaped such that one or more cross-section areas of the IC package are thinner than one or more other cross-section areas of the IC package. Other embodiments may be described and/or claimed.