公开(公告)号：JP2010251768A

公开(公告)日：2010-11-04

申请号：JP2010114452

申请日：2010-05-18

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01L21/3065 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01J37/32 ,  H01L21/302 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

CPC classification number: H03H7/40 ,  H01J37/32082 ,  H01J37/32174

Abstract: PROBLEM TO BE SOLVED: To provide a method for suitably controlling plasma of a plasma processing apparatus. SOLUTION: A tendency for discontinuity to occur in the amount of power reflected back to the high-frequency bias source of a vacuum plasma processor is overcome by controlling the high-frequency bias source output power so that the power delivered to plasma 50 in a vacuum processing chamber remains substantially constant. The high-frequency bias source output power is changed much faster than changes in capacitors of a matching network 108 connecting the high-frequency bias power source to the electrode of a workpiece holder processor. The capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber. COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：提供一种适当地控制等离子体处理装置的等离子体的方法。 解决方案：通过控制高频偏置源输出功率来克服反射回到真空等离子体处理器的高频偏压源的功率量中的不连续性的趋势，使得输送到等离子体50的功率 在真空处理室中保持基本恒定。 高频偏置源输出功率比连接高频偏置电源与工件支架处理器的电极的匹配网络108的电容器的变化快得多。 通过光学测量腔室中的等离子体护套的厚度来确定等离子体的电容性阻抗分量。 版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2010050463A

公开(公告)日：2010-03-04

申请号：JP2009206010

申请日：2009-09-07

Applicant: Lam Res Corp ,  ラム リサーチ コーポレーションLam Research Corporation

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/683 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H02N13/00

CPC classification number: H01L21/6833 ,  Y10T279/23

Abstract: PROBLEM TO BE SOLVED: To provide a dechucking method of an electrostatically chucked workpiece by preventing rupture and cracks. SOLUTION: A glass workpiece 32 is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece in a plasma processing chamber. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. A peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes a residual charge from the workpiece after workpiece lifting from the chuck. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：通过防止破裂和裂纹来提供静电夹持工件的脱扣方法。 解决方案：通过在加工期间逐渐降低夹持电压，将玻璃工件32从单极静电卡盘中拔出，同时保持电压足够高以将工件夹紧在等离子体处理室中。 响应于流过卡盘的传热流体的流量来控制处理期间的夹紧电压，以保持卡紧力并且流速近似恒定。 在加工结束时施加到卡盘的反极性电压有助于脱扣。 在加工结束时，工件温度保持在高值，以帮助脱帽。 在卡盘的工件提升期间流过卡盘的峰值电流控制下一次脱扣操作期间的反极性电压的幅度和/或持续时间。 室内的惰性等离子体从卡盘上取出后，从工件中除去剩余的电荷。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO0124255A9

公开(公告)日：2002-09-26

申请号：PCT/US0026600

申请日：2000-09-27

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M

IPC: H01L21/302 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/66

CPC classification number: B24B37/013 ,  H01J37/32935 ,  H01L22/26

Abstract: A method for monitoring a device fabrication process. The method includes etching into a wafer disposed inside a chamber and detecting the intensity of a portion of a light reflected from a surface of the wafer and further scattered at a scattering inside surface of the chamber.

Abstract translation: 一种用于监测器件制造工艺的方法。 该方法包括蚀刻到设置在室内的晶片中，并且检测从晶片的表面反射的光的一部分的强度，并进一步在室的散射内表面散射。

公开(公告)号：AU5913699A

公开(公告)日：2000-04-17

申请号：AU5913699

申请日：1999-09-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P

IPC: B23Q3/15 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H01L21/68

Abstract: A glass workpiece processed in a vacuum plasma processing chamber is dechucked from a monopolar electrostatic chuck by gradually reducing the chucking voltage during processing while maintaining the voltage high enough to clamp the workpiece. The chucking voltage during processing is controlled in response to flow rate of a heat transfer fluid flowing to the chuck to maintain the chucking force and the flow rate approximately constant. A reverse polarity voltage applied to the chuck at the end of processing assists in dechucking. The workpiece temperature is maintained at a high value at the end of processing to assisting in dechucking. Peak current flowing through the chuck during workpiece lifting from the chuck controls the amplitude and/or duration of the reverse polarity voltage during the next dechucking operation. An inert plasma in the chamber removes residual charge from the workpiece after workpiece lifting from the chuck.

公开(公告)号：AU2003228799A1

公开(公告)日：2003-11-11

申请号：AU2003228799

申请日：2003-05-01

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  KUTHI ANDRAS ,  BAILEY ANDREW D III ,  BERNEY BUTCH

IPC: H05H1/46 ,  C23C16/00 ,  C23C16/50 ,  H01J37/32 ,  H01L21/205 ,  H01L21/306 ,  H01L21/3065 ,  H05H1/00

Abstract: A plasma processing chamber for processing a substrate to form electronic components thereon is disclosed. The plasma processing chamber includes a plasma-facing component having a plasma-facing surface oriented toward a plasma in the plasma processing chamber during processing of the substrate, the plasma-facing component being electrically isolated from a ground terminal. The plasma processing chamber further includes a grounding arrangement coupled to the plasma-facing component, the grounding arrangement including a first resistance circuit disposed in a first current path between the plasma-facing component and the ground terminal. The grounding arrangement further includes a RF filter arrangement disposed in at least one other current path between the plasma-facing component and the ground terminal, wherein a resistance value of the first resistance circuit is selected to substantially eliminate arcing between the plasma and the plasma-facing component during the processing of the substrate.

公开(公告)号：ES2184469T3

公开(公告)日：2003-04-01

申请号：ES99930547

申请日：1999-06-22

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  CHEN ANTHONY L ,  SCHOEPP ALAN M

IPC: H05H1/46 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065

Abstract: A window of a plasma processing chamber. The window includes a first dielectric portion having a first electrical thickness and a first resistivity to an etching plasma that is formed within the plasma processing chamber. There is further included a second dielectric portion disposed within the first dielectric portion. The second dielectric portion has a second electrical thickness that is less than the first electrical thickness. The second dielectric portion is formed of a substantially transparent material and has a second resistivity to the etching plasma. The second resistivity is higher than the first resistivity.

公开(公告)号：SG11202000376PA

公开(公告)日：2020-02-27

申请号：SG11202000376P

申请日：2018-06-07

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  VALCORE JOHN C JR ,  LYNDAKER BRADFORD J

IPC: H01J37/32

Abstract: Systems and methods for tuning a radio frequency (RF) generator are described. One of the methods includes supplying, by a high frequency RF generator, a high frequency RF signal to the IMN. The method includes accessing a plurality of measurement values of a variable measured at an output of the high frequency RF generator to generate a parameter. The variable is measured during a plurality of cycles of operation of a low frequency RF generator. The measurement values are associated with a plurality of values of power supplied by the high frequency RF generator. The method includes determining, for one of the cycles, a value of a frequency of the high frequency RF generator and a value of a factor associated with a shunt circuit of the IMN for which there is an increase in efficiency in power delivered by the high frequency RF generator.

公开(公告)号：SG132675A1

公开(公告)日：2007-06-28

申请号：SG2007035090

申请日：2004-12-30

Applicant: LAM RES CORP

Inventor： III ANDREW D BAILEY ,  LOHOKARE SHRIKANT P ,  HOWALD ARTHUR M ,  KIM YUNSANG

IPC: H01J37/32 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/44 ,  H01L21/461 ,  H01L21/4763 ,  H01L21/768 ,  H01L23/48 ,  H01L23/52 ,  H01L29/24 ,  H01L29/40 ,  H01L33/00

Abstract: A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.

公开(公告)号：DE60034321D1

公开(公告)日：2007-05-24

申请号：DE60034321

申请日：2000-02-10

Applicant: LAM RES CORP

Inventor： HOWALD ARTHUR M ,  HOLLAND JOHN P ,  OLSON CHRISTOPHER

IPC: H01J37/32 ,  H05H1/00 ,  C23F4/00 ,  H01J7/24 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/31 ,  H03H7/40 ,  H05B31/26 ,  H05H1/46

Abstract: A tendency for a discontinuity to occur in the amount of power reflected back to an r.f. bias source of a vacuum plasma processor is overcome by controlling the r.f. bias source output power so the power delivered to plasma in a vacuum processing chamber remains substantially constant. The r.f bias source output power is changed much faster than changes in capacitors of a matching network connecting the r.f. bias power source to an electrode of a workpiece holder processor. A capacitive impedance component of the plasma is determined by optically measuring the thickness of a plasma sheath in the chamber.

公开(公告)号：SG174752A1

公开(公告)日：2011-10-28

申请号：SG2011062197

申请日：2007-08-17

Applicant: LAM RES CORP

Inventor： DORDI YEZDI ,  REDEKER FRITZ C ,  BOYD JOHN ,  THIE WILLIAM ,  ARUNAGIRI TIRUCHIRAPALLI ,  HOWALD ARTHUR M ,  YOON HYUNGSUK ALEXANDER ,  VERTOMMEN JOHAN

Abstract: 59 OF THE DISCLOSURE[177] The embodiments provide processes and integrated systems that produce a metal-to metal or a silicon-to-metal interface to enhance electro-migration performance, to provide lower metal resistivity, and to improve metal-to-metal or silicon-to-metal interfacial adhesion for copper interconnects. An exemplary method of preparing a substrate surface to selectively deposit a thin layer of a cobalt-alloy material on a copper surface of in an integrated system to improve electromigration performance of a copper interconnect is provided. The method includes removing contaminants and metal oxides from the substrate surface in the integrated system, and reconditioning the substrate surface using a reducing environment after removing contaminants and metal oxides in the integrated system. The method also includes selectively depositing the thin layer of cobalt-alloy material on the copper surface of the copper interconnect in the integrated system after reconditioning the substrate surface. System to practice the exemplary method described above are also provided.Figure 8A