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    An integrated circuit
    23.
    发明专利
    An integrated circuit 未知

    公开(公告)号：GB2351844A

    公开(公告)日：2001-01-10

    申请号：GB0014433

    申请日：2000-06-13

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： KIZILYALLI ISIK C ,  MA YI ,  MERCHANT SAILESH MANSINH ,  ROY PRADIP KUMAR

    IPC: H01L21/336 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/94 ,  H01L21/283

    Abstract: An integrated circuit has a dielectric material layer 102, 103 disposed over a substrate 101. The dielectric layer 102, 103 has an equivalent electrical thickness of 2.5 nm or less, relative to silicon dioxide. The dielectric material 102, 103, includes at least one layer other than silicon dioxide. There is an electrode 104 which may consist of W, W x Si y , WSi x N y , TaSi x N y , MoSi x N y , Ma, Ta, or Ti, disposed over the dielectric layer 102, 103. The dielectric layer 102, 103 may comprise an oxide layer 102 grown on the substrate 101 and a high-k dielectric material 103. The high-k dielectric may be Ta 2 O 5 , ZrO 2 , TiO 2 or a pervoskite material, which can be disposed on the grown oxide layer 102. The substrate 101 may be an oxidizable layer, and a stress free oxide layer 105 may be disposed between the oxidizable layer 101 and the grown oxide layer 102. The high-k dielectric layer 103 may be doped with nitrogen. The integrated circuit may be a DRAM, FLASH, or an analog or mixed signal CMOS circuit.

    Charge injection transistor using high-k dielectric barrier layer
    24.
    发明专利
    Charge injection transistor using high-k dielectric barrier layer 未知

    公开(公告)号：GB2351843A

    公开(公告)日：2001-01-10

    申请号：GB0013885

    申请日：2000-06-07

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： KIZILYALLI ISIK C ,  MASTRAPASQUA MARCO

    IPC: H01L29/772 ,  C23C14/08 ,  C23C14/58 ,  H01L21/02 ,  H01L21/28 ,  H01L21/316 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L29/51 ,  H01L29/76

    Abstract: An electronic device comprises a substrate 301, on to which is deposited a first barrier layer 302, on to which is deposited a second barrier layer303, on to which is deposited a third layer 304. The layers are arranged such that hot carriers are injected across the first barrier layer 302 to the said third layer 304. The electronic device may be a charge injection transistor in which the substrate 301 is silicon and the first barrier layer 302 is SiO 2 and the second barrier layer 303 is a high-k dielectric. The high-k barrier layer may be 3 - 100 nm thick and formed of Ta 2 O 5 , TiO 2 , ZrO 2 and perovskite materials. The SiO 2 layer may be grown on the silicon substrate layer 301 to a thickness of 0.6 - 2 nm in which 0.3 - 0.8 thickness of the said layer may be stress-free. The said third layer 304 may be the collector electrode. Also disclosed is an electronic device comprising a substrate, on to which is disposed a first barrier layer, on to which is disposed a second barrier layer, in which the first barrier layer has a conduction band energy level that is more than 0.5 electron volts greater than that of the second barrier layer. The device is intended to provide a thin first barrier layer which aids the tunnelling of hot carriers and a thick second barrier layer which reduces leakage current. The device may be produced using conventional silicon processing technology.

    A semiconductor device having a metal gate with a work function compatible with a semiconductor device
    27.
    发明专利
    A semiconductor device having a metal gate with a work function compatible with a semiconductor device 未知

    公开(公告)号：GB2363903A

    公开(公告)日：2002-01-09

    申请号：GB0028873

    申请日：2000-11-27

    Applicant: LUCENT TECHNOLOGIES INC

    Inventor： KIZILYALLI ISIK C ,  SINGH RANBIR ,  STIRLING LORI

    IPC: H01L27/092 ,  H01L21/28 ,  H01L21/8238 ,  H01L27/105 ,  H01L29/49

    Abstract: A method of manufacturing a semiconductor device 100 comprises, forming a first gate electrode 155, a first metal gate electrode material having a work function compatible with a first transistor 115, and forming a second gate electrode 160 of a second metal gate electrode material having a work function compatible with a second transistor 120. The first and second transistors 115, 120 are of opposite types and are formed on a semiconductor substrate. In a semiconductor device 100 the first metal gate electrode material 162b is located over the second metal gate electrode material 162a. The first gate electrode may be formed from a material having a work function of about 4.2 eV and the second gate electrode may be formed from a material having a work fuction of 5.2 eV. The first electrode gate material may be tantalum, tungsten, titanium, or titanium nitride, and the second electrode gate material may be tungsten silicide. The semiconductor device may have at least one n+ doped polysilicon electrode (Figures 7, 8 and 9). There may be a metal etch barrier layer having a high dielectric constant formed from tantalum pentoxide, silicon nitride or aluminium oxide. An integrated circuit includes the semiconductor device and has interconnnects electrically connecting the transistors.

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