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    SEMICONDUCTOR STRUCTURES AND DEVICES NOT LATTICE MATCHED TO THE SUBSTRATE
    23.
    发明申请
    SEMICONDUCTOR STRUCTURES AND DEVICES NOT LATTICE MATCHED TO THE SUBSTRATE 审中-公开
    半导体结构和与衬底不匹配的器件

    公开(公告)号：WO03012841A3

    公开(公告)日：2003-07-10

    申请号：PCT/US0215844

    申请日：2002-05-16

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT ,  RAMDANI JAMAL

    IPC: C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/203 ,  H01L21/316 ,  H01L21/318 ,  H01L21/36 ,  H01L21/822 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/06 ,  C30B25/20

    CPC classification number: H01L21/02381 ,  C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  C30B29/04 ,  H01L21/02378 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/318 ,  H01L21/8221 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2224/80001

    Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from the silicon wafer byan amorphous interface layer (28) of silicon oxide. The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer (24) is substantially lattice matched to both the underlying silicon wafer (22) and the overlying monocrystalline material layer (26). Any lattice mismatch between the accommodating buffer layer (24) and the underlying silicon substrate (22) is taken care of by the amorphous interface layer (28). In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

    Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以在单晶衬底（22）如大硅晶片上生长高质量的单晶材料外延层。 适应缓冲层（24）包括由硅氧化物的无定形界面层（28）与硅晶片隔开的单晶氧化物层。 无定形界面层（28）消除应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。 适应缓冲层（24）基本上与下面的硅晶片（22）和上面的单晶材料层（26）晶格匹配。 调节缓冲层（24）和下面的硅衬底（22）之间的任何晶格失配由无定形界面层（28）照顾。 另外，柔性衬底的形成可以包括利用表面活性剂增强外延，单晶硅在单晶氧化物上的外延生长以及Zintl相材料的外延生长。

    OPTICAL STRUCTURE ON COMPLIANT SUBSTRATE
    24.
    发明申请
    OPTICAL STRUCTURE ON COMPLIANT SUBSTRATE 审中-公开
    合适基板的光学结构

    公开(公告)号：WO0209242A3

    公开(公告)日：2003-01-30

    申请号：PCT/US0122567

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  HILT LYNDEE ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L21/36 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/183 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327

    CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02521 ,  H01L33/0066 ,  H01S5/021 ,  H01S5/0218 ,  H01S5/183 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/32333 ,  H01S5/327 ,  H01S2301/173

    Abstract: High quality epitaxial layers of compound semiconductor materials (108) can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Optical structures such as visible light lasers and light emitting diodes can be grown on the high quality epitaxial compound semiconductor material to create highly reliable devices having reduced costs.

    Abstract translation: 通过首先在硅晶片（102）上生长容纳缓冲层（104），可以将复合半导体材料（108）的高质量外延层生长成覆盖在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 可以在高质量外延化合物半导体材料上生长诸如可见光激光器和发光二极管之类的光学结构，从而产生具有降低成本的高可靠性器件。

    Multijunction solar cell
    25.
    发明专利
    Multijunction solar cell 未知

    公开(公告)号：AU2002320029A1

    公开(公告)日：2003-03-03

    申请号：AU2002320029

    申请日：2002-05-06

    Applicant: MOTOROLA INC

    Inventor： OOMS WILLIAM J ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  EISENBEISER KURT W

    IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

    Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions.

    Alkali earth metal oxide on gate insulators
    28.
    发明专利
    Alkali earth metal oxide on gate insulators 未知

    公开(公告)号：AU7894901A

    公开(公告)日：2002-02-05

    申请号：AU7894901

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  HILT LYNDEE

    IPC: C30B25/18 ,  H01L21/20 ,  H01L21/28 ,  H01L21/316 ,  H01L29/20 ,  H01L29/78 ,  H01L21/00

    Abstract: High quality epitaxial layers of stable oxides can be grown overlying compound semiconductor material substrates. The compound semiconductor substrate (101) may be terminated with an atomic layer of gallium, for example (for a gallium arsenide substrate), forming a terminating layer (102). The oxide layer (105) is a layer of monocrystalline alkali earth oxide spaced apart from the compound semiconductor wafer by an oxide template layer (103) overlying the compound semiconductor substrate via the terminating layer. The oxide template layer (103) dissipates strain and permits the growth of a high quality monocrystalline oxide layer. Any lattice mismatch between the monocrystalline oxide layer and the underlying compound semiconductor substrate is decreased by the oxide template layer. The monocrystalline oxide layers can be used as gate dielectric in insulated gate field effect transistors.

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