公开(公告)号：SE537499C2

公开(公告)日：2015-05-26

申请号：SE0900590

申请日：2009-04-30

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS TORBJÖRN ,  KÄLVESTEN EDWARD ,  SVEDIN NIKLAS ,  ERIKSSON ANDERS

IPC: H01L23/10 ,  B81B7/00

公开(公告)号：DK1609180T3

公开(公告)日：2013-06-24

申请号：DK04722492

申请日：2004-03-22

Applicant: SILEX MICROSYSTEMS AB

Inventor： KAELVESTEN EDVARD ,  EBEFORS THORBJOERN ,  RANGSTEN PELLE ,  HUHTAOJA TOMMY ,  SVEDIN NIKLAS

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48

公开(公告)号：SE533992C2

公开(公告)日：2011-03-22

申请号：SE0802663

申请日：2008-12-23

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  AAGREN PETER

IPC: H01L23/522 ,  B81B7/00 ,  B81C1/00 ,  G02B26/08 ,  H01L21/768

公开(公告)号：SE1051193A1

公开(公告)日：2010-11-12

申请号：SE1051193

申请日：2008-12-23

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  AAGREN PETER ,  SVEDIN NIKLAS ,  ERICSSON THOMAS

IPC: G02B26/08 ,  B81B7/00 ,  H01L23/522

公开(公告)号：SE0300784L

公开(公告)日：2004-09-22

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L21/60

Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：SE0300784D0

公开(公告)日：2003-03-21

申请号：SE0300784

申请日：2003-03-21

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  SVEDIN NIKLAS ,  HUHTAOJA TOMMY ,  RANGSTEN PELLE

IPC: B81B7/00 ,  H01L21/768 ,  H01L23/48 ,  H01L

Abstract: A method of making an electrical connection between a first (top) and a second (bottom) surface of a conducting or semi-conducting substrate includes creating a trench in the first surface, and establishing an insulating enclosure entirely separating a portion of the substrate, defined by the trench. Also described is a product usable as a starting substrate for the manufacture of micro-electronic and/or micro-mechanic devices, including a flat substrate of a semi-conducting or conducting material, and having a first and a second surface and at least one electrically conducting member extending through the substrate. The electrically conducting member is insulated from surrounding material of the flat substrate by a finite layer of an insulating material, and includes the same material as the substrate, i.e. it is made from the wafer material.

公开(公告)号：EP3038974A4

公开(公告)日：2017-07-26

申请号：EP14839979

申请日：2014-08-26

Applicant: SILEX MICROSYSTEMS AB

Inventor： KÄLVESTEN EDVARD ,  EBEFORS THORBJÖRN ,  SVEDIN NIKLAS

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/50 ,  H01L23/00 ,  H01L23/08 ,  H01L23/48

CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

公开(公告)号：EP2377154A4

公开(公告)日：2012-06-27

申请号：EP09835356

申请日：2009-12-23

Applicant: SILEX MICROSYSTEMS AB

Inventor： EBEFORS THORBJOERN ,  KAELVESTEN EDVARD ,  AAGREN PETER ,  SVEDIN NIKLAS

IPC: G02B26/08 ,  B81B7/00 ,  B81C1/00 ,  H01L21/768

CPC classification number: G02B26/0833 ,  B81B7/0006 ,  B81B7/007 ,  B81B2207/092 ,  B81B2207/095 ,  G02B6/3518 ,  G02B6/3584 ,  G02B26/0841 ,  H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00012 ,  H01L2924/00

Abstract: The invention relates to a layered micro-electronic and/or micro-mechanic structure, comprising at least three alternating electrically conductive layers with insulating layers between the conductive layers. There is also provided a via in a first outer layer, said via comprising an insulated conductive connection made of wafer native material through the layer, an electrically conductive plug extending through the other layers and into said via in the first outer layer in order to provide conductivity through the layers, and an insulating enclosure surrounding said conductive plug in at least one selected layer of said other layers for insulating said plug from the material in said selected layer. It also relates to micro-electronic and/or micro-mechanic device comprising a movable member provided above a cavity such that it is movable in at least one direction. The device has a layered structure according to the invention. Methods of making such a layered MEMS structure is also provided.