公开(公告)号：WO2013022479A3

公开(公告)日：2013-05-16

申请号：PCT/US2012000348

申请日：2012-08-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER K-JOSEF ,  RANA VIRENDRA V ,  SEUTTER SEAN ,  DESHPANDE ANAND ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  MANTEGHI KAMRAN ,  STALCUP THOM ,  KAMIAN GEORGE D ,  WANG DAVID XUAN-QI ,  SU YEN-SHENG ,  WINGERT MICHAEL

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/02327 ,  H01L31/03765 ,  H01L31/0392 ,  H01L31/049 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/075 ,  H01L31/1812 ,  H01L31/1896 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

Abstract translation: 描述了与用于背接触太阳能电池的背板相关的制造方法和结构，其提供用于太阳能电池基板增强和电互连以及用于形成薄膜背接触太阳能电池的制造方法和结构。

公开(公告)号：WO2012166749A3

公开(公告)日：2013-03-28

申请号：PCT/US2012039901

申请日：2012-05-29

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

Inventor： MOSLEHI MEHRDAD M ,  RANA VIRENDRA V ,  KAPUR PAWAN

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/02363 ,  H01L21/26513 ,  H01L21/26586 ,  H01L21/268 ,  H01L21/324 ,  H01L31/035281 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Emitter regions, selective emitter regions, and a back surface field are formed through ion implantation and annealing processes.

Abstract translation: 在薄膜半导体太阳能电池上形成背接触薄膜太阳能电池。 优选地，薄膜半导体材料包括晶体硅。 通过离子注入和退火工艺形成发射极区域，选择性发射极区域和背表面场。

公开(公告)号：WO2011100647A2

公开(公告)日：2011-08-18

申请号：PCT/US2011024670

申请日：2011-02-12

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re -usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.

Abstract translation: 本公开提供了从可再利用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。 对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

公开(公告)号：WO2014179366A8

公开(公告)日：2015-04-16

申请号：PCT/US2014035961

申请日：2014-04-29

Applicant: SOLEXEL INC

Inventor： RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  BENJAMIN RATTLE ,  DESHAZER HEATHER ,  COUTANT SOLENE ,  KOMMERA SWAROOP

IPC: H01L31/18 ,  H01L31/024 ,  H01L31/04

CPC classification number: H01L31/0682 ,  H01L21/268 ,  H01L21/324 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  Y02E10/547

Abstract: Annealing solutions providing damage-free laser patterning utilizing auxiliary heating to anneal laser damaged ablation regions are provided herein. Ablation spots on an underlying semiconductor substrate are annealed during or after pulsed laser ablation patterning of overlying transparent passivation layers.

Abstract translation: 本文提供了使用辅助加热来退火激光损伤的烧蚀区域的提供无损伤激光图案的退火解决方案。 在覆盖的透明钝化层的脉冲激光烧蚀图案化期间或之后对底层半导体衬底上的消融点进行退火。

公开(公告)号：WO2011072161A3

公开(公告)日：2011-11-10

申请号：PCT/US2010059759

申请日：2010-12-09

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

Inventor： MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  SEUTTER SEAN ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  VAN KERSCHAVER EMMANUEL

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

Abstract translation: 提供背接触背结太阳能电池和制造方法。 该背接触背结太阳能电池包括具有光捕获前表面的衬底，该光捕获前表面具有钝化层，掺杂的基极区域以及具有与掺杂的基极区域相反的极性的掺杂的背侧发射极区域。 发射体上的背面钝化层和图案化反射层形成光捕获背面镜。 叉指金属化图案位于太阳能电池的背面，并且永久增强为电池提供支撑。

公开(公告)号：EP2534700A4

公开(公告)日：2015-04-29

申请号：EP11742933

申请日：2011-02-12

Applicant: SOLEXEL INC

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  WANG DAVID XUAN-QI ,  KAPUR PAWAN ,  NAG SOMNATH ,  KAMIAN GEORGE ,  ASHJAEE JAY ,  YONEHARA TAKAO

IPC: H01L31/042 ,  H01L21/20 ,  H01L21/306 ,  H01L31/18

CPC classification number: H01L21/20 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2856512A4

公开(公告)日：2015-12-16

申请号：EP13798110

申请日：2013-05-29

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER DAWN ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

Inventor： DESHPANDE ANAND ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  MOSLEHI MEHRDAD M ,  SEUTTER SEAN M ,  DESHAZER HEATHER ,  KOMMERA SWAROOP ,  ANBALAGAN PRANAV ,  RATTLE BENJAMINE E ,  COUTANT SOLENE

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/068

CPC classification number: H01L31/022441 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：EP2499674A4

公开(公告)日：2014-07-23

申请号：EP10830677

申请日：2010-11-10

Applicant: SOLEXEL INC

Inventor： KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/18

CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

公开(公告)号：WO2016019396A3

公开(公告)日：2016-04-14

申请号：PCT/US2015043507

申请日：2015-08-03

Applicant: SOLEXEL INC

Inventor： DESHPANDE ANAND ,  TSAI MEGAN ,  SEUTTER SEAN S ,  KAPUR PAWAN ,  MOSLEHI MEHRDAD M

IPC: H01L31/0392 ,  H01L31/04 ,  H01L31/18

CPC classification number: H01L31/1868 ,  H01L31/02167 ,  Y02E10/50 ,  Y02P70/521

Abstract: A surface of a silicon substrate is passivated. A silicon oxide layer is formed on a first surface of a silicon substrate. An aluminum oxide layer is formed on the silicon oxide layer. A hydrogenated amorphous silicon nitride layer is formed on the aluminum oxide layer. A high intensity light source illuminates the silicon surface, the silicon oxide layer, the aluminum oxide layer, and the hydrogenated amorphous silicon nitride layer.

Abstract translation: 硅衬底的表面被钝化。 在硅衬底的第一表面上形成氧化硅层。 在氧化硅层上形成氧化铝层。 在氧化铝层上形成氢化非晶氮化硅层。 高强度光源照射硅表面，氧化硅层，氧化铝层和氢化非晶氮化硅层。

公开(公告)号：WO2014011260A2

公开(公告)日：2014-01-16

申请号：PCT/US2013035029

申请日：2013-04-02

Applicant: SOLEXEL INC

Inventor： KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M ,  KAPUR PAWAN ,  RANA VIRENDRA V ,  DUTTON DAVID ,  SEUTTER SEAN M ,  CALCATERRA ANTHONY ,  ASHJAEE JAY ,  YONEHARA TAKAO

CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547 ,  Y02P70/521

Abstract: Fabrication methods and structures relating to multi-level metallization for solar cells as well as fabrication methods and structures for forming back contact solar cells are provided.

Abstract translation: 提供了与太阳能电池的多层金属化有关的制造方法和结构以及用于形成背接触太阳能电池的制造方法和结构。