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32 records (took 0.021 seconds)

    23.
    发明专利
    未知

    公开(公告)号：DE69325443D1

    公开(公告)日：1999-07-29

    申请号：DE69325443

    申请日：1993-03-18

    Applicant: ST MICROELECTRONICS SRL

    Inventor： CAMPARDO GIOVANNI ,  CRISENZA GIUSEPPE ,  DALLABORA MARCO

    IPC: G11C17/00 ,  G11C16/04 ,  G11C16/06 ,  G11C16/30 ,  H01L21/8247 ,  H01L27/115

    Abstract: To reduce the read and write errors caused by depleted memory array cells being turned on even when not selected, the nonselected memory cells are so biased as to present a floating terminal and a terminal at a positive voltage with respect to the substrate region. In this way, the threshold voltage of the above cells (the minimum voltage between the gate and source terminals for the cell to be turned on) increases due to the "body effect", whereby the threshold voltage depends, among other things, on the voltage drop between the cell terminal operating as the source and the substrate, and increases alongside an increase in the voltage drop.

    28.
    发明专利
    未知

    公开(公告)号：DE69426487D1

    公开(公告)日：2001-02-01

    申请号：DE69426487

    申请日：1994-03-28

    Applicant: ST MICROELECTRONICS SRL

    Inventor： CAMPARDO GIOVANNI ,  DALLABORA MARCO

    IPC: G11C17/00 ,  G11C16/06 ,  G11C16/28 ,  G11C16/34

    Abstract: To reduce the supply voltage (VCC) of a nonvolatile memory (48), a read reference signal (H) is generated having a reference threshold value ranging between the maximum permissible threshold value for erased cells and the minimum permissible threshold value for written cells. To avoid reducing the maximum supply voltage, the characteristic (H) of the read reference signal is composed of two portions: a first portion (H1), ranging between the threshold value and a predetermined value (Vs), presents a slope lower than that of the characteristic (A, G) of the memory cells (50); and a second portion (H2), as of the predetermined value of the supply voltage, presents the same slope as the memory cells. The shifted-threshold, two-slope characteristic is achieved by means of virgin cells (11-13) so biased as to see bias voltages lower than the supply voltage.

    30.
    发明专利
    未知

    公开(公告)号：DE69325443T2

    公开(公告)日：2000-01-27

    申请号：DE69325443

    申请日：1993-03-18

    Applicant: ST MICROELECTRONICS SRL

    Inventor： CAMPARDO GIOVANNI ,  CRISENZA GIUSEPPE ,  DALLABORA MARCO

    IPC: G11C17/00 ,  G11C16/04 ,  G11C16/06 ,  G11C16/30 ,  H01L21/8247 ,  H01L27/115

    Abstract: To reduce the read and write errors caused by depleted memory array cells being turned on even when not selected, the nonselected memory cells are so biased as to present a floating terminal and a terminal at a positive voltage with respect to the substrate region. In this way, the threshold voltage of the above cells (the minimum voltage between the gate and source terminals for the cell to be turned on) increases due to the "body effect", whereby the threshold voltage depends, among other things, on the voltage drop between the cell terminal operating as the source and the substrate, and increases alongside an increase in the voltage drop.

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