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公开(公告)号:EP0782268A3
公开(公告)日:1998-11-04
申请号:EP96830353
申请日:1996-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , BETTINI LUIGI , BARTOLI SIMONE
IPC: G11C5/14 , G11C16/12 , H03K17/687 , H03K17/693
CPC classification number: G11C5/143 , G11C16/12 , H03K17/6871 , H03K17/693
Abstract: A circuit for switching between supply voltages and in particular for non-volatile flash memory devices and of the type comprising a first and a second circuit branch each incorporating a pair of transistors (MA,MB;Mc,MD) connected in series provides that at least one branch (2) of the circuit be structured with a bridge circuit made up of P-channel MOS transistors. The bridge is made of a first (5) and a second (4) pairs of transistors (M1,M2,M3,M4) connected between a first supply voltage reference (SUPPLY1) and a common node (D). The first pair (5) comprises transistors (M1,M2) bigger than the transistors (M3,M4) of the second pair (4) while between the transistors (M3,M4) making up the second pair (4) is inserted a pair of resistors (R1,R2). Between the pair of resistors (R1,R2) there is an interconnection node (F) connected to a corresponding interconnection node (E) between the transistors (M1,M2) of the first pair (5).
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公开(公告)号:DE69514791T2
公开(公告)日:2000-07-20
申请号:DE69514791
申请日:1995-07-24
Applicant: ST MICROELECTRONICS SRL
Inventor: DALLABORA MARCO , VILLA CORRADO , BETTINI LUIGI
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公开(公告)号:DE69620855D1
公开(公告)日:2002-05-29
申请号:DE69620855
申请日:1996-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , BETTINI LUIGI , BARTOLI SIMONE
IPC: H03K17/693
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公开(公告)号:DE69627350D1
公开(公告)日:2003-05-15
申请号:DE69627350
申请日:1996-11-27
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , DEFENDI MARCO , BETTINI LUIGI
Abstract: The invention relates to a method and a circuit for generating a pulse synchronization signal (ATD) in order to control the reading phase of memorycells in semiconductor integrated, electronic memory devices. The pulse signal (ATD) is generated upon sensing a change in logic state on at least one of a plurality of address input terminals (PAD) of the memory cells to also generate an equalization signal (EQLZ) for a sense amplifier. The logic state of said pulse signal (ATD) is re-acknowledged by a fed-back response having a predetermined delay and being generated upon reception of a corresponding signal to said equalization signal (EQLZ). To this aim, a re-acknowledge circuit portion (15) is provided which is input a corresponding signal to the equalization signal (EQLZ) and feedback connected to the output node (12) to drive the discharging of the node (12) with a predetermined delay from the reception of the input signal.
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公开(公告)号:DE69620855T2
公开(公告)日:2002-11-21
申请号:DE69620855
申请日:1996-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , BETTINI LUIGI , BARTOLI SIMONE
IPC: H03K17/693
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公开(公告)号:ITVA20070026A1
公开(公告)日:2008-09-03
申请号:ITVA20070026
申请日:2007-03-02
Applicant: ST MICROELECTRONICS SRL
Inventor: BETTINI LUIGI , CONFALONIERI EMANUELE , POIDOMANI CARLA GIUSEPPINA , TURBANTI PAOLO
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公开(公告)号:DE69516883T2
公开(公告)日:2000-10-05
申请号:DE69516883
申请日:1995-12-29
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , DEFENDI MARCO , BETTINI LUIGI
Abstract: The invention relates to a method of erasing an electrically programmable non-volatile memory device constructed as a multi-sector matrix memory and being of the type with an erase algorithm integrated into the device. The method comprises the following steps: erasing some or all of the matrix sectors in parallel; subsequently reading and checking each erased sector; storing the address of a sector being checked when the issue of a check is unfavorable; carrying out a fresh parallel erasing step; and starting a new reading/checking step from the sector that has checked unfavorably.
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公开(公告)号:DE69516883D1
公开(公告)日:2000-06-15
申请号:DE69516883
申请日:1995-12-29
Applicant: ST MICROELECTRONICS SRL
Inventor: VILLA CORRADO , DEFENDI MARCO , BETTINI LUIGI
Abstract: The invention relates to a method of erasing an electrically programmable non-volatile memory device constructed as a multi-sector matrix memory and being of the type with an erase algorithm integrated into the device. The method comprises the following steps: erasing some or all of the matrix sectors in parallel; subsequently reading and checking each erased sector; storing the address of a sector being checked when the issue of a check is unfavorable; carrying out a fresh parallel erasing step; and starting a new reading/checking step from the sector that has checked unfavorably.
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公开(公告)号:ITMI992487D0
公开(公告)日:1999-11-26
申请号:ITMI992487
申请日:1999-11-26
Applicant: ST MICROELECTRONICS SRL
Inventor: BEDARIDA LORENZO , BARTOLI SIMONE , BETTINI LUIGI
Abstract: A pulse generator of a type that includes at least one current mirror connected between first and second voltage references and to at least one initiation terminal receiving a pulsive-type initiating signal, connected to a load terminal receiving a load signal, and connected to an output terminal providing an output signal. The pulse generator further includes at least one logic gate having one input terminal connected to an internal control circuit node of the current mirror, having another input terminal connected to receive the initiating signal, and having an output terminal connected to the output terminal of the pulse generator; at least one regulator circuit connected between the current mirror and the second voltage reference and feedback connected to the output terminal; and at least one conductive-type transistor connected between the current mirror and the regulator circuit; the output terminal of the pulse generator delivering a retarded pulsive-type output signal that is independent of the supply voltage and exhibits the same dependency on temperature as the regulator circuit.
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公开(公告)号:IT1314090B1
公开(公告)日:2002-12-04
申请号:ITMI992487
申请日:1999-11-26
Applicant: ST MICROELECTRONICS SRL
Inventor: DIMA VINCENZO , BEDARIDA LORENZO , BETTINI LUIGI
Abstract: A pulse generator of a type that includes at least one current mirror connected between first and second voltage references and to at least one initiation terminal receiving a pulsive-type initiating signal, connected to a load terminal receiving a load signal, and connected to an output terminal providing an output signal. The pulse generator further includes at least one logic gate having one input terminal connected to an internal control circuit node of the current mirror, having another input terminal connected to receive the initiating signal, and having an output terminal connected to the output terminal of the pulse generator; at least one regulator circuit connected between the current mirror and the second voltage reference and feedback connected to the output terminal; and at least one conductive-type transistor connected between the current mirror and the regulator circuit; the output terminal of the pulse generator delivering a retarded pulsive-type output signal that is independent of the supply voltage and exhibits the same dependency on temperature as the regulator circuit.
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