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    27.
    发明专利
    未知

    公开(公告)号：ITMI992469A1

    公开(公告)日：2001-05-25

    申请号：ITMI992469

    申请日：1999-11-25

    Applicant: ST MICROELECTRONICS SRL

    Inventor： NOVELLI ALDO ,  GARIBOLDI ROBERTO ,  GENOVA ANGELO ,  FILIPPO ROBERTO

    IPC: H03K17/0412 ,  H03K17/06

    Abstract: A high side circuit is described which comprises at least one power device (1) having a first non drivable terminal (D) connected to a supply voltage (Vcc), at least one load (2) connected between a second non drivable terminal (S) of the power device (1) and ground, and driving circuitry (10). The driving circuitry (10) comprises suitable dimensioned transistors (M1, M2, M3) which are connected to each other and to a higher voltage (Vboot) than the supply voltage (Vcc) in order to control the turning on and the turning off of the power device (1) and to minimize the potential difference between the second non drivable terminal (S) and a drivable terminal (G) of the power device (1) during the turning off state to avoid the re-turning on of the same power device.

    28.
    发明专利
    未知

    公开(公告)号：DE69421083T2

    公开(公告)日：2000-03-16

    申请号：DE69421083

    申请日：1994-11-17

    Applicant: ST MICROELECTRONICS SRL ,  CONS RIC MICROELETTRONICA

    Inventor： COLLETTI PAOLO ,  BONTEMPO GREGORIO ,  PULVIRENTI FRANCESCO ,  GARIBOLDI ROBERTO

    IPC: H01L27/04 ,  G05F1/573 ,  H01L21/822 ,  H01L29/78 ,  H02H7/00 ,  H03K17/08 ,  H02H9/02

    Abstract: The purpose of the present invention is to supply a method and a circuit simple and accurate enough to protect at least one transistor against exceeding a complex limit implying processing of multiple electrical quantities associated with said transistor. Since in many practical cases said complex limit corresponds to the product of at least two quantities, typically a current and a voltage, the circuit in accordance with the present invention generates electrical signals basically proportional to said quantities, multiplies them, compares the product with a reference signal corresponding to the limit placed on the transistor and acts on the transistor in such a way that said limit is not exceeded. Advantageously the multiplication of currents can be provided simply by means of connection in series of bipolar transistor junctions at which said currents are supplied to the respective emitters. In this case it is additionally advantageous to generate the reference signal by means of connection in series of the bipolar transistor junctions in such a manner as to have an analogous behaviour of the multiplier and the generator.

    29.
    发明专利
    未知

    公开(公告)号：ITMI992469D0

    公开(公告)日：1999-11-25

    申请号：ITMI992469

    申请日：1999-11-25

    Applicant: ST MICROELECTRONICS SRL

    Inventor： NOVELLI ALDO ,  GARIBOLDI ROBERTO ,  GENOVA ANGELO ,  FILIPPO ROBERTO

    IPC: H03K17/0412 ,  H03K17/06

    Abstract: A high side circuit is described which comprises at least one power device (1) having a first non drivable terminal (D) connected to a supply voltage (Vcc), at least one load (2) connected between a second non drivable terminal (S) of the power device (1) and ground, and driving circuitry (10). The driving circuitry (10) comprises suitable dimensioned transistors (M1, M2, M3) which are connected to each other and to a higher voltage (Vboot) than the supply voltage (Vcc) in order to control the turning on and the turning off of the power device (1) and to minimize the potential difference between the second non drivable terminal (S) and a drivable terminal (G) of the power device (1) during the turning off state to avoid the re-turning on of the same power device.

    30.
    发明专利
    未知

    公开(公告)号：DE69222144T2

    公开(公告)日：1998-02-05

    申请号：DE69222144

    申请日：1992-03-12

    Applicant: ST MICROELECTRONICS SRL

    Inventor： GARIBOLDI ROBERTO ,  LEONE MARCELLO

    IPC: H02M1/08 ,  H03F3/26 ,  H03K17/06 ,  H03K17/687 ,  H02M3/18

    Abstract: A drive circuit (20) comprising a voltage source (21) supplying a reference voltage (VREF) at its output (35); a voltage elevating circuit (23) connected to the supply (VS) and to the output (35) of the voltage source, and supplying at its output (42), under normal operating conditions, a drive voltage (VCP) greater than the supply voltage and increasing with the reference voltage. The input of the voltage source (21) is connected to the output (42) of the voltage elevating circuit (23), and defines a positive feedback resulting in an increase in the reference voltage (VREF) alongside an increase in the drive voltage (VCP), and therefore a corresponding increase in the drive voltage (VCP) up to a maximum permissible value, thus providing for a sufficient drive voltage for driving the gate-source junction of power MOS transistors, even in the presence of a low supply voltage.

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