公开(公告)号：DE69726718T2

公开(公告)日：2004-10-07

申请号：DE69726718

申请日：1997-07-31

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  MONTANINI PIETRO ,  FERRERA MARCO

IPC: G01P9/04 ,  B81B3/00 ,  G01C19/56 ,  G01P15/08 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L41/08

Abstract: To increase the sensitivity of the sensor, the movable mass (40) forming the seismic mass is formed starting from the epitaxial layer (13) and is covered by a weighting region of tungsten (26c) which has high density. To manufacture it, buried conductive regions (2) are formed in the substrate (1); then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions (9a-9d) are formed on the buried conductive regions (2) so as to cover them partially; the epitaxial layer (13) is then grown, using a nucleus region; a tungsten layer (26) is deposited and defined and, using a silicon carbide layer (31) as mask, the suspended structure (40) is defined; finally the sacrificial region is removed, forming an air gap (38).

公开(公告)号：ITMI20072341A1

公开(公告)日：2009-06-15

申请号：ITMI20072341

申请日：2007-12-14

Applicant: ST MICROELECTRONICS SRL

Inventor： CROCE GIUSEPPE ,  MONTANINI PIETRO ,  MOTTURA MARTA

公开(公告)号：ITMI20051280A1

公开(公告)日：2007-01-07

申请号：ITMI20051280

申请日：2005-07-06

Applicant: ST MICROELECTRONICS SRL

Inventor： MARTINI FRANCESCO ,  MONTANINI PIETRO

公开(公告)号：DE69828486D1

公开(公告)日：2005-02-10

申请号：DE69828486

申请日：1998-04-03

Applicant: ST MICROELECTRONICS SRL

Inventor： MONTANINI PIETRO ,  VILLA FLAVIO ,  BARLOCCHI GABRIELE

IPC: H01L21/3065 ,  H01L21/762

公开(公告)号：DE69817518D1

公开(公告)日：2003-10-02

申请号：DE69817518

申请日：1998-04-30

Applicant: ST MICROELECTRONICS SRL

Inventor： MONTANINI PIETRO ,  FERRERA MARCO ,  CASTOLDI LAURA ,  GELMI ILARIA

IPC: H01L21/306 ,  B81B3/00 ,  B81C1/00 ,  G01C19/56 ,  G01L9/00 ,  G01P15/08 ,  G01P15/097 ,  G01P15/10 ,  G01P15/125 ,  H01L21/762 ,  H01L21/764 ,  H01L49/00

Abstract: The method is based on the use of a silicon carbide mask for removing a sacrificial region. In case of manufacture of integrated semiconductor material structures, the following steps are performed: forming a sacrificial region (6) of silicon oxide on a substrate (1) of semiconductor material; growing a pseudo-epitaxial layer (8); forming an electronic circuit (10-13, 18); depositing a silicon carbide layer (21); defining photolithographycally the silicon carbon layer so as to form an etching mask (23) containing the topography of a microstructure (27) to be formed; with the etching mask (23), forming trenches (25) in the pseudo-epitaxial layer (8) as far as the sacrificial region (6) so as to laterally define the microstructure; and removing the sacrificial region (6) through the trenches (25).