23.
    发明专利
    未知

    公开(公告)号:DE69526336D1

    公开(公告)日:2002-05-16

    申请号:DE69526336

    申请日:1995-04-28

    Abstract: A reading device for devices with memory cells with two branches each comprising, connected in cascade, an electronic switch (T3, T4), an active element (T1, T2) reactively connected to the active element of the other branch, between them to form a voltage amplifier. Each active element is controlled by means of a high impedance circuit element (DL, DR). A microswitch (TE) which connects the two branches together is inserted between the two active elements (1, 2).

    24.
    发明专利
    未知

    公开(公告)号:DE69726136T2

    公开(公告)日:2004-08-26

    申请号:DE69726136

    申请日:1997-08-29

    Abstract: The present invention relates to a circuit for generating a regulated voltage (RV), in particular for gate terminals of non-volatile memory cells of the floating gate type, which comprises a generator circuit (OSC,CHP) adapted to generate an unregulated voltage (VCHP) on its output, a comparator circuit coupled to the output of the generator circuit (OSC,CHP), including a reference element consisting of a non-volatile memory cell (REFC) of the floating gate type and adapted to output an electric error signal (ID) tied to the difference between the unregulated voltage (VCHP) and the threshold voltage of the cell (REFC), and a regulator circuit (CSEL,CBIAS,IVC,DRV,TR) coupled to the output of the comparator circuit and operative to regulate the unregulated voltage (VCHP) based on the value of the electric error signal (ID). Through the present circuit, the regulated voltage (RV) is made programmable and tied to the parameters of the memory cell (REFC).

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