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    Field emission electron source having carbon nanotube and manufacturing method thereof
    21.
    发明授权
    Field emission electron source having carbon nanotube and manufacturing method thereof 有权
    具有碳纳米管的场发射电子源及其制造方法

    公开(公告)号：US07710008B2

    公开(公告)日：2010-05-04

    申请号：US11514595

    申请日：2006-09-01

    Applicant: Yang Wei ,  Liang Liu ,  Wei Wei ,  Kai-Li Jiang ,  Shou-Shan Fan

    Inventor： Yang Wei ,  Liang Liu ,  Wei Wei ,  Kai-Li Jiang ,  Shou-Shan Fan

    IPC: H01J1/62

    CPC classification number: H01J1/3044 ,  H01J37/073 ,  H01J37/26 ,  H01J2201/30411 ,  H01J2201/30434 ,  H01J2201/30469 ,  H01J2237/06341 ,  H01J2237/28

    Abstract: A field emission electron source (10) includes a conductive base (12), a carbon nanotube (14), and a film of metal (16). The conductive base includes a top (122). One end (142) of the carbon nanotube is electrically connected with the top of the conductive base. The other end (144) of the carbon nanotube extends outwardly away from the top of the conductive base. The film of metal is formed on the nearly entire surface of the carbon nanotube and at least on the portion of the top of the conductive base proximate the carbon nanotube. A method for manufacturing the described field emission electron source is also provided.

    Abstract translation: 场发射电子源（10）包括导电基底（12），碳纳米管（14）和金属薄膜（16）。 导电基底包括顶部（122）。 碳纳米管的一端（142）与导电性基材的顶部电连接。 碳纳米管的另一端（144）向外远离导电基底的顶部。 金属膜形成在碳纳米管的几乎整个表面上，并且至少在靠近碳纳米管的导电基底顶部的部分上形成。 还提供了一种用于制造所述场致发射电子源的方法。

    Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones
    23.
    发明申请
    Techniques for Optimizing Nanotips Derived from Frozen Taylor Cones 有权
    用于优化来自冷冻泰勒锥的纳米芯片的技术

    公开(公告)号：US20170076901A1

    公开(公告)日：2017-03-16

    申请号：US15361911

    申请日：2016-11-28

    Applicant: Gregory Hirsch

    Inventor： Gregory Hirsch

    IPC: H01J9/02 ,  C23C14/24 ,  C23C14/16 ,  C25D3/50 ,  B21C1/16 ,  C25D17/00 ,  H01J37/073 ,  H01J37/08 ,  H05G2/00 ,  C23C14/58 ,  C25D5/50

    CPC classification number: H01J9/025 ,  B21C1/16 ,  C23C14/16 ,  C23C14/24 ,  C23C14/5806 ,  C25D3/50 ,  C25D5/50 ,  C25D17/00 ,  H01J1/3044 ,  H01J37/073 ,  H01J37/08 ,  H01J37/3178 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/0802 ,  H01J2237/0805 ,  H05G2/005

    Abstract: Optimization techniques are disclosed for producing sharp and stable tips/nanotips relying on liquid Taylor cones created from electrically conductive materials with high melting points. A wire substrate of such a material with a preform end in the shape of a regular or concave cone, is first melted with a focused laser beam. Under the influence of a high positive potential, a Taylor cone in a liquid/molten state is formed at that end. The cone is then quenched upon cessation of the laser power, thus freezing the Taylor cone. The tip of the frozen Taylor cone is reheated by the laser to allow its precise localized melting and shaping. Tips thus obtained yield desirable end-forms suitable as electron field emission sources for a variety of applications. In-situ regeneration of the tip is readily accomplished. These tips can also be employed as regenerable bright ion sources using field ionization/desorption of introduced chemical species.

    Abstract translation: 公开了优化技术，用于产生依赖于由具有高熔点的导电材料产生的液体泰勒锥的尖锐和稳定的尖端/纳米片。 首先用聚焦激光束熔化这种具有预制件端部为规则的或凹形的形状的材料的线基材。 在高正电位的影响下，在此端形成液态/熔融状态的泰勒锥。 然后在停止激光功率时，锥体被淬火，从而冻结泰勒锥。 冷冻泰勒锥的尖端被激光器重新加热，以允许其精确的局部熔化和成型。 如此获得的提示产生适合作为各种应用的电子场发射源的期望的终端形式。 尖端的原位再生容易实现。 这些尖端也可以用作引入化学物质的场电离/解吸的可再生的明亮离子源。

    Ion source having secondary electron enhancing electrode
    26.
    发明授权
    Ion source having secondary electron enhancing electrode 有权
    具有二次电子增强电极的离子源

    公开(公告)号：US08253314B2

    公开(公告)日：2012-08-28

    申请号：US12959601

    申请日：2010-12-03

    Applicant: Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    Inventor： Peng Liu ,  Duan-Liang Zhou ,  Pi-Jin Chen ,  Zhao-Fu Hu ,  Cai-Lin Guo ,  Bing-Chu Du ,  Shou-Shan Fan

    IPC: H01J27/00 ,  H01J27/02

    CPC classification number: H01J31/127 ,  H01J1/3044 ,  H01J29/04 ,  H01J2201/30411 ,  H01J2329/0415

    Abstract: An ion source using a field emission device is provided. The field emission device includes an insulative substrate, an electron pulling electrode, a secondary electron emission layer, a first dielectric layer, a cathode electrode, and an electron emission layer. The electron pulling electrode is located on a surface of the insulative substrate. The secondary electron emission layer is located on a surface of the electron pulling electrode. The cathode electrode is located apart from the electron pulling electrode by the first dielectric layer. The cathode electrode has a surface oriented to the electron pulling electrode and defines a first opening as an electron output portion. The electron emission layer is located on the surface of the cathode electrode and oriented to the electron pulling electrode.

    Abstract translation: 提供了使用场发射装置的离子源。 场致发射器件包括绝缘衬底，电子牵拉电极，二次电子发射层，第一介电层，阴极电极和电子发射层。 电子牵引电极位于绝缘基板的表面上。 二次电子发射层位于电子牵拉电极的表面上。 阴极通过第一介电层与电子牵拉电极分开。 阴极电极具有取向于电子牵引电极的表面，并且限定作为电子输出部分的第一开口。 电子发射层位于阴极表面并且定向到电子牵引电极。

    High Pressure Field Emitter, Photoionization, Plasma Initiation and Field Devices
    28.
    发明申请
    High Pressure Field Emitter, Photoionization, Plasma Initiation and Field Devices 失效
    高压场发射器，光电离，等离子体起始和现场设备

    公开(公告)号：US20060227830A1

    公开(公告)日：2006-10-12

    申请号：US11383847

    申请日：2006-05-17

    Applicant: John Keady

    Inventor： John Keady

    IPC: H01S3/14

    CPC classification number: F03H1/0081 ,  F03H1/0012 ,  H01J27/26 ,  H01J2201/30411 ,  H01S5/105

    Abstract: At least one exemplary embodiment is directed to a propulsion device that ionizes a portion of a medium and E×B drifts the ionized portion providing thrust where the ionized portion is created using high pressure field emitters comprising: a substrate layer; a gate layer; a field emitter tip; and a cover layer, wherein the field emitter tip is configured to emit electrons in a region when there is a potential difference between the gate layer and the field emitter tip, where the cover layer separates an ambient environment at a pressure from the region, and where a substantial portion of the electrons pass through the cover layer.

    Abstract translation: 至少一个示例性实施例涉及一种电离介质的一部分的推进装置，并且ExB使用高压场发射器漂移产生离子化部分的离子化部分的离子化部分，其包括：基底层; 门层; 场发射器尖端; 以及覆盖层，其中所述场发射极尖端被配置为在所述栅极层和所述场致发射极尖端之间存在电位差的区域中发射电子，其中所述覆盖层在与所述区域的压力下分离周围环境，以及 其中大部分电子通过覆盖层。

    Method for manufacturing a cathode tip of electric field emission device
    29.
    发明授权
    Method for manufacturing a cathode tip of electric field emission device 有权
    电场发射装置的阴极尖端的制造方法

    公开(公告)号：US6069018A

    公开(公告)日：2000-05-30

    申请号：US141121

    申请日：1998-08-27

    Applicant: Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    Inventor： Yoon-Ho Song ,  Jin Ho Lee ,  Kyoung Ik Cho

    IPC: H01J17/49 ,  H01L21/00

    CPC classification number: H01J9/025 ,  H01J2201/30411 ,  H01J2209/0226 ,  H01J2237/06341 ,  H01J2329/0415

    Abstract: A method for manufacturing a cathode tip of electric field emission device includes depositing conductive layer and undoped silicon layer on the insulator substrate sequentially; forming a tip-mask pattern on the selected area of top of said undoped silicon film and etching said undoped silicon film isotropically and then anisotropically in turn, so that the silicon film is formed as cone-like having cylinder; and removing the tip-mask pattern, implanting ion into the etched silicon layer and removing the ion implanted silicon layer using the wet etch process.

    Abstract translation: 制造电场发射器件的阴极尖端的方法包括依次在绝缘体衬底上沉积导电层和未掺杂的硅层; 在所述未掺杂的硅膜的顶部的选定区域上形成尖端掩模图案，并且各向同性地各向异性地蚀刻所述未掺杂的硅膜，从而使得硅膜形成为具有圆筒的锥形; 并且去除尖端掩模图案，将离子注入到蚀刻的硅层中并且使用湿蚀刻工艺去除离子注入的硅层。

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