Abstract:
A power device (D) integrated on a semiconductor substrate (1) with double thickness of a gate dielectric layer (S) and a corresponding manufacturing method for said power device (D), said method comprising the following steps: forming first dielectric portions (3) having a first thickness; forming on the whole semiconductor substrate (1) a first dielectric layer (4) thinner than the first dielectric portions (3); forming a conductive layer (5) on the first dielectric layer (4); forming a second dielectric layer (6,13) on the conductive layer (5); performing an etching step of the second dielectric layer (6,13) and of the conductive layer (5) to form first spacers (7,14) and a gate electrode (5a), to define, between the gate electrode (5a) and the substrate (1), second dielectric portions (4a) in the first dielectric layer (4), the second dielectric portions (4a) being auto-aligned with the first portions (3). An etching step may be carried out to remove the portion of the conductive layer (5) overlying the thick dielectric portions (3). A body contact trench (12) may be formed using second spacers (11).
Abstract:
A method of filtering and an image filter (10) is disclosed. The filter is provided for a digital camera including image sensors sensitive to light, a color filter placed over sensitive elements of the sensors and patterned according to a Bayer mosaic pattern layout and an interpolation algorithm joining together the digital information provided by differently colored adjacent pixels in said Bayer pattern. The filter (10) is adaptive and includes a noise level computation block (26) for operating directly on a said Bayer pattern data set of for each color channel thus removing noise while simultaneously preserving picture detail.
Abstract:
A device for controlling the frequency of resonance of an oscillating micro-electromechanical system includes: a microstructure (2), having a first body (10) and a second body (11), which is capacitively coupled to the first body (10) and elastically oscillatable with respect thereto at a calibratable frequency of resonance (É R ) a relative displacement (”Y) between the second body (11) and the first body (10) being detectable from outside; and an amplifier (21) associated to the microstructure (2) for detecting the relative displacement (”Y). DC decoupling elements (23) are arranged between the amplifier (21) and the microstructure (2).