Abstract:
Embryogenic callus of corn inbred B73, embryogenic cell suspensions of corn inbred B73, clones of the embryogenic callus and cell suspensions of corn inbred B73, corn plants and the seed thereof regenerated from the embryogenic callus, embryogenic cell suspensions and clones of the embryogenic callus and embryogenic cell suspensions, and progeny of the regenerated corn plants including mutant and variant progeny are claimed.
Abstract:
Semiconductor chips, which have been diced, can be removed from the conductive adhesive/polymer support film holding them, without leaving residual adhesive on the film if the wafer/adhesive/support film laminate is heated prior to the dicing step. The heating step increases the re lease characteristics between the adhesive and film.
Abstract:
Improved magnesium phosphate fast-setting cementitious compositions containing an oxy-boron compound. These compositions form a hardened mass when water is added at ambient temperatures. The incorporation of the oxy-boron compound within these compositions retards the initial setting time, increases the early compressive strength ot the resulting hardened mass by allowing a reduced amount of water to be added to the compositions. These compositions include a solid activator containing a P 2 0 5 material. e.g. ammonium phosphate fertilizer, absorbed onto a porous material, e.g. diatomaceous earth.
Abstract:
A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof. A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order. The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus. In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof. The present invention represents an advance over the prior art.
Abstract:
A dispersed sulfur product having good flowability can be formed by dispersing particulate sulfur in a liquid poly-(cis-isoprene dispersion agent (i.e., either made by polymerizing synthetic cis-isoprene or by depolymerizing natural rubber). The sulfur product resulting therefrom has good dispersibility in rubber. The product can be formed without using an aqueous co-precipitation technique by simply mixing the liquid poly- (cis-isoprene) dispersion agent with a major amount of sulfur until the desired product results.
Abstract:
An electric contact lubricant is disclosed which comprises a partially crosslinked polyol ester formed by esterification of an aliphatic monocarboxylic acid with an aliphatic polyol in the presence of a dibasic acid crosslinker, a phosphate ester fluid, and one or more corrosion and oxidation inhibitor compounds.
Abstract:
Conductive metallic layers which are substantially continuous and pin hole free are adhesively bonded to a dielectric support (e.g. epoxy glass prepreg) by using a transfer laminate. The transfer laminate comprises a release coated carrier film, a metallic layer and an adhesive. After being bonded to the support, the carrier film is stripped therefrom to bond the metallic layer to the support. In fig. 1 a transfer laminate comprises a carrier film 11, a release coating 12 bonded to one side of the carrier film, an adherent metal layer 13, and an adhesive layer 14.
Abstract:
The invention is directed to inorganic oxide-containing aeorgels and the method of preparing such oxide-containing aerogels which are characterized by high surface areas and high pore volume. The preparation comprises dissolving the inorganic alkoxide or metal salt in a solvent optionally containing a catalytic amount of an acid or base and hydrolyzing the metal compound which is then further treated with a fluid at or above its critical temperature and pressure to extract the solvent.
Abstract:
A synergistic herbicidal composition with residual activity comprises cycloate (I) and cyanazine (II) in a weight ratio of about 2 : 1 to 4 : 1, plus preferably a thiocarbamate herbicide antidote.