Embryogenic callus and cell suspension of inbred corn
    321.
    发明公开
    Embryogenic callus and cell suspension of inbred corn 失效
    胚芽绒和细胞悬挂的杂交纤维

    公开(公告)号:EP0160390A3

    公开(公告)日:1987-04-08

    申请号:EP85302096

    申请日:1985-03-26

    CPC classification number: A01H4/00 A01H5/10

    Abstract: Embryogenic callus of corn inbred B73, embryogenic cell suspensions of corn inbred B73, clones of the embryogenic callus and cell suspensions of corn inbred B73, corn plants and the seed thereof regenerated from the embryogenic callus, embryogenic cell suspensions and clones of the embryogenic callus and embryogenic cell suspensions, and progeny of the regenerated corn plants including mutant and variant progeny are claimed.

    Magnesium phosphate fast-setting cementitious compositions containing set retardants
    323.
    发明公开
    Magnesium phosphate fast-setting cementitious compositions containing set retardants 失效
    Abbindungsverzögererenthaltende schnell abbindende磷酸镁 - Zementzusammensetzungen。

    公开(公告)号:EP0203658A1

    公开(公告)日:1986-12-03

    申请号:EP86200851.3

    申请日:1986-05-16

    Abstract: Improved magnesium phosphate fast-setting cementitious compositions containing an oxy-boron compound. These compositions form a hardened mass when water is added at ambient temperatures. The incorporation of the oxy-boron compound within these compositions retards the initial setting time, increases the early compressive strength ot the resulting hardened mass by allowing a reduced amount of water to be added to the compositions. These compositions include a solid activator containing a P 2 0 5 material. e.g. ammonium phosphate fertilizer, absorbed onto a porous material, e.g. diatomaceous earth.

    Abstract translation: 含有氧 - 硼化合物的改进的磷酸镁快速凝固水泥组合物。 当在环境温度下加入水时,这些组合物形成硬化物质。 在这些组合物中掺入氧 - 硼化合物延迟初始凝固时间,通过允许减少量的水添加到组合物中来增加所得固化物质的早期压缩强度。 这些组合物包括含有P2O5材料的固体活化剂。 例如 磷酸铵肥料,吸收在多孔材料上, G。 硅藻土。

    Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure
    324.
    发明公开
    Passivation and insulation of III-V devices with pnictides, particularly amorphous pnictides having a layer-like structure 失效
    具有PNICTIDES的III-V器件的钝化和绝缘,具有层状结构的特殊非晶态PNICTIDES

    公开(公告)号:EP0132326A3

    公开(公告)日:1986-11-26

    申请号:EP84304427

    申请日:1984-06-28

    Abstract: A semiconductor characterised in that it has a pnictide-rich layer on a surface thereof is disclosed, as is the production thereof. A new form of pnictide characterized in that it comprises a layer of amorphous pnictide-rich material having a layer-like local order. The accompanying illustration shows a comparison of Raman spectra from which it may be concluded that the local order of the present fibres is the amorphous counterpart of the puckered layer-like, sheet-like crystalline structure of black phosphorus. In general terms, pnictide thin films, particularly phosphorus, grown on III-V semiconductors, particularly InP, GaP and GaAs, are amorphous and have a novel layer-like, puckered sheet-like local order. The thin films are typically 400 Angstroms (4x 10- 6 cms) thick and grown preferably by molecular beam deposition, although other processes, such as vacuum evaporation, sputtering, chemical vapour deposition and deposition from a liquid melt, may be used. The layers may be grown on the , and surface of III-V crystals. The pnictide layer reduces the density of surface states and allows the depletion layer to be modulated, the surface barrier reduced, the electron concentration at the surface increased and there is a decrease in the surface recombination velocity and an increase in the photoluminescence intensity. The layers may be utilized in MIS and Metal-semiconductor (Schottky) devices, for example, to insulate and passivate MISFETS, to passivate MESFETS, to reduce the surface current component of the reverse bias dark current in P-I-N and avalanche diodes and to improve performance of opto-electronic devices, such as light-emitting diodes, lasers, solar cells, photo-cathodes and photo-detectors. The pnictide layer may be applied to intermetallic and compound semiconductors having a pnictide component. The pnictides may be phosphorus, arsenic, antimony or bismuth, or combinations thereof. The present invention represents an advance over the prior art.

    Synergistic herbicidal composition
    330.
    发明公开
    Synergistic herbicidal composition 失效
    协调主义者Zusammensetzung。

    公开(公告)号:EP0184870A1

    公开(公告)日:1986-06-18

    申请号:EP85201870.4

    申请日:1985-11-13

    CPC classification number: A01N47/18 A01N43/70 A01N2300/00

    Abstract: A synergistic herbicidal composition with residual activity comprises cycloate (I)
    and cyanazine (II)
    in a weight ratio of about 2 : 1 to 4 : 1, plus preferably a thiocarbamate herbicide antidote.

    Abstract translation: 具有残留活性的协同除草组合物包括重量比为约2:1至4:1的环化(I)CHEM和氰嗪(II),优选为硫代氨基甲酸酯除草剂解毒剂。

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