Abstract:
Methods and structures are provided which reduce charge build up on spacer walls in a flat panel display. In one embodiment, the order of activating the electron emitting elements is modified such that the electron emitting elements adjacent to the spacers are activated before the electron emitting elements which charge thespacers (501, 502, 503) to an undesirable level. In another embodiment, face electrodes (501a, 502a, 503a) which are located on the surface of the spacer are connected to a common bus (504), thereby distributing the charge built up on any particular spacer. The common bus (504) can further be connected to a capacitor (1010) which is located either inside or outside the active region of the flat panel display, thereby increasing the charging time constant of the spacers. The capacitor can be connected to ground or to a high voltage supply (1011). In another embodiment, the charging time constant of the spacers is increased by fabricating the spacers from a material having a high dielectric constant, such as dispersion of aluminum oxide, chromium oxide and titanium oxide, wherein the titanium oxide makes up approximately four percent of the spacer material.
Abstract in simplified Chinese:本发明提供一种,在实施例中,制造阴极的技术,只需要相对较少较简单的步骤。在实施例中,本发明亦提供一种减少一层耐蚀层的阴极制造技术。更进一步的,在实施例中,本发明亦提供一种能降低成本、增进生产线效率的阴极制造技术。最后,本发明也提供了一种能降低薄型阴极射线管显示器单位制造成本的制造技术。
Abstract:
A method of forming a field emission display device comprising a gate layer (MG1), an interlayer dielectric (ILD1) separating the gate and cathode electrode (M1) comprising forming a blanket layer of polycarbonate over the gate layer implanted with ion tracks to form a mask, and etching the gate layer and cathode cavity (T1) with an etchant comprising, octafluorocyclobutane, that is selective with respect to silicon dioxide (ILD1) so that a silicon nitride passivation layer (PA2) need not be protected by another passivation layer prior to the etching step.
Abstract:
A voltage-adjustment section (20) of an electronic device converts an input control voltage (VI) into an output control voltage (VO) in such a way that a collector current (ICP) form with electrons emitted from an emitter (EP) of an emission/collection cell (26), or triode, varies in a desired, typically linear, manner with the input control voltage. The triode further includes a collector (CP) that carries the collector current and a gate electrode (GP) that regulates the collector current as a function of the output control voltage. Control of the collector current so as to achieve the desired current/voltage relationship is achieved with an analog control loop containing the triode and an amplifier (28) coupled between the triode's collector and gate electrode. The triode thus typically has a linear gamma characteristic relative to the input control voltage. The voltage-adjustment section is suitable for use in a display device such as a flat-panel display.
Abstract:
An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.
Abstract:
A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a partially finished electron-emitting device. The solid layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.
Abstract:
An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.
Abstract:
A device (16) for sensing current flowing in a generally flat plate structure (10) contains a magnetic head (18) and signal processing circuitry (20). The magnetic head (a) senses changes in current-induced magnetic flux as the head is positioned over the plate structure and (b) provides a head output signal. The signal processing circuitry processes the head output signal to produce a data signal indicative of how much current appears to flow in the plate structure below the head. A driving voltage, which typically varies in a periodic manner to produce a characteristic signature, is applied to a primary conductor in the plate structure. When the plate structure contains a group of first electrical conductors (32) that are nominally electrically insulated from and cross a group of second electrical conductors (48), a probability analysis technique is typically performed on magnetically obtained current data to detect short circuit defects in the plate structure.
Abstract:
Method for compensating for brightness variations in a field emission device (100a). In one embodiment, a method and system are described for measuring the relative brightness of rows of a field emission display (FED) device (100a), storing information representing the measured brightness into a correction table and using the correction table to provide uniform row brightness in the display by adjusting row voltages and/or row on-time periods. A special measurement process is described for providing accurate current measurements on the rows. This embodiment compensates for brightness variations of the rows, e.g., for rows near the spacer walls (30). In another embodiment, a periodic signal, e.g., a high frequency noise signal (340), is added to the row on-time pulse in order to camouflage brightness variations in the rows near the spacer walls (30). In another embodiment, the area under the row on-time pulse is adjusted to provide row-by-row brightness compensation based on correction values stored in a memory resident correction table (60). In another embodiment, the brightness of each row is measured and compiled into a data profile for the FED. The data profile is used to control cathode burn-in processes so that brightness variations are corrected by physically altering the characteristics of the emitters of the rows.