SPACER STRUCTURES FOR A FLAT PANEL DISPLAY AND METHODS FOR OPERATING SAME
    31.
    发明申请
    SPACER STRUCTURES FOR A FLAT PANEL DISPLAY AND METHODS FOR OPERATING SAME 审中-公开
    平板显示器的间隔结构及其操作方法

    公开(公告)号:WO1998003986A1

    公开(公告)日:1998-01-29

    申请号:PCT/US1997011917

    申请日:1997-07-17

    Abstract: Methods and structures are provided which reduce charge build up on spacer walls in a flat panel display. In one embodiment, the order of activating the electron emitting elements is modified such that the electron emitting elements adjacent to the spacers are activated before the electron emitting elements which charge thespacers (501, 502, 503) to an undesirable level. In another embodiment, face electrodes (501a, 502a, 503a) which are located on the surface of the spacer are connected to a common bus (504), thereby distributing the charge built up on any particular spacer. The common bus (504) can further be connected to a capacitor (1010) which is located either inside or outside the active region of the flat panel display, thereby increasing the charging time constant of the spacers. The capacitor can be connected to ground or to a high voltage supply (1011). In another embodiment, the charging time constant of the spacers is increased by fabricating the spacers from a material having a high dielectric constant, such as dispersion of aluminum oxide, chromium oxide and titanium oxide, wherein the titanium oxide makes up approximately four percent of the spacer material.

    Abstract translation: 提供了在平板显示器中减少间隔壁上积聚电荷的方法和结构。 在一个实施例中,激活电子发射元件的顺序被修改为使得邻近间隔物的电子发射元件在将电极(501,502,503)充电到不期望的电平之前被激活。 在另一个实施例中,位于间隔件表面上的面电极(501a,502a,503a)连接到公共总线(504),从而分配积累在任何特定间隔物上的电荷。 公共总线(504)还可以连接到位于平板显示器的有源区域的内部或外部的电容器(1010),从而增加间隔件的充电时间常数。 电容器可以连接到地或高压电源(1011)。 在另一个实施例中,通过从具有高介电常数的材料(例如氧化铝,氧化铬和氧化钛的分散体)制造间隔物来增加间隔物的充电时间常数,其中氧化钛占大约4% 间隔材料。

    形成孔穴及閘控極之方法
    33.
    发明专利
    形成孔穴及閘控極之方法 失效
    形成孔穴及闸控极之方法

    公开(公告)号:TW586166B

    公开(公告)日:2004-05-01

    申请号:TW091121579

    申请日:2002-09-20

    IPC: H01L

    CPC classification number: H01J9/025

    Abstract: 本發明提供一種,在實施例中,製造陰極的技術,只需要相對較少較簡單的步驟。在實施例中,本發明亦提供一種減少一層耐蝕層的陰極製造技術。更進一步的,在實施例中,本發明亦提供一種能降低成本、增進生產線效率的陰極製造技術。最後,本發明也提供了一種能降低薄型陰極射線管顯示器單位製造成本的製造技術。

    Abstract in simplified Chinese: 本发明提供一种,在实施例中,制造阴极的技术,只需要相对较少较简单的步骤。在实施例中,本发明亦提供一种减少一层耐蚀层的阴极制造技术。更进一步的,在实施例中,本发明亦提供一种能降低成本、增进生产线效率的阴极制造技术。最后,本发明也提供了一种能降低薄型阴极射线管显示器单位制造成本的制造技术。

    METHOD OF FORMING CAVITIES AND GATES
    34.
    发明申请
    METHOD OF FORMING CAVITIES AND GATES 审中-公开
    形成洞穴和门的方法

    公开(公告)号:WO2003030202A1

    公开(公告)日:2003-04-10

    申请号:PCT/US2002/029393

    申请日:2002-09-16

    CPC classification number: H01J9/025

    Abstract: A method of forming a field emission display device comprising a gate layer (MG1), an interlayer dielectric (ILD1) separating the gate and cathode electrode (M1) comprising forming a blanket layer of polycarbonate over the gate layer implanted with ion tracks to form a mask, and etching the gate layer and cathode cavity (T1) with an etchant comprising, octafluorocyclobutane, that is selective with respect to silicon dioxide (ILD1) so that a silicon nitride passivation layer (PA2) need not be protected by another passivation layer prior to the etching step.

    Abstract translation: 一种形成场致发射显示装置的方法,包括栅极层MG1,分离栅极和阴极电极M1的层间电介质ILD1,包括在注入离子轨迹的栅极层上形成聚碳酸酯的覆盖层以形成掩模,并蚀刻栅极 具有包括八氟环丁烷的蚀刻剂的层和阴极腔T1,其相对于二氧化硅ILD1是选择性的,使得氮化硅钝化层PA2在蚀刻步骤之前不需要被另一钝化层保护。

    DEVICE FOR CONDITIONING CONTROL SIGNAL TO ELECTRON EMITTER, PREFERABLY SO THAT COLLECTED ELECTRON CURRENT VARIES LINEARLY WITH INPUT CONTROL VOLTAGE
    35.
    发明申请
    DEVICE FOR CONDITIONING CONTROL SIGNAL TO ELECTRON EMITTER, PREFERABLY SO THAT COLLECTED ELECTRON CURRENT VARIES LINEARLY WITH INPUT CONTROL VOLTAGE 审中-公开
    用于将控制信号调节到电子发射器的装置,优选地,使得具有输入控制电压的收集的电子电流变量

    公开(公告)号:WO1998019501A1

    公开(公告)日:1998-05-07

    申请号:PCT/US1997017549

    申请日:1997-10-17

    CPC classification number: G09G3/22 G09G2310/027 G09G2320/0276 H01J2329/00

    Abstract: A voltage-adjustment section (20) of an electronic device converts an input control voltage (VI) into an output control voltage (VO) in such a way that a collector current (ICP) form with electrons emitted from an emitter (EP) of an emission/collection cell (26), or triode, varies in a desired, typically linear, manner with the input control voltage. The triode further includes a collector (CP) that carries the collector current and a gate electrode (GP) that regulates the collector current as a function of the output control voltage. Control of the collector current so as to achieve the desired current/voltage relationship is achieved with an analog control loop containing the triode and an amplifier (28) coupled between the triode's collector and gate electrode. The triode thus typically has a linear gamma characteristic relative to the input control voltage. The voltage-adjustment section is suitable for use in a display device such as a flat-panel display.

    Abstract translation: 电子设备的电压调节部分(20)将输入控制电压(VI)转换为输出控制电压(VO),使得集电极电流(ICP)形式与从发射器(EP)发射的电子 发射/收集单元(26)或三极管以期望的,典型地线性的方式与输入控制电压变化。 三极管还包括承载集电极电流的集电极(CP)和调节作为输出控制电压的函数的集电极电流的栅电极(GP)。 利用包含三极管的模拟控制回路和耦合在三极管的集电极和栅电极之间的放大器(28)来实现集电极电流的控制以达到期望的电流/电压关系。 因此,三极管相对于输入控制电压通常具有线性γ特性。 电压调节部适用于平板显示器等显示装置。

    FABRICATION OF GATED ELECTRON-EMITTING DEVICE UTILIZING DISTRIBUTED PARTICLES TO DEFINE GATE OPENINGS
    36.
    发明申请
    FABRICATION OF GATED ELECTRON-EMITTING DEVICE UTILIZING DISTRIBUTED PARTICLES TO DEFINE GATE OPENINGS 审中-公开
    使用分布式颗粒的定位电子发射装置的制造来定义门盖开口

    公开(公告)号:WO1997047021A1

    公开(公告)日:1997-12-11

    申请号:PCT/US1997009198

    申请日:1997-06-05

    CPC classification number: H01J9/025 H01J2329/00

    Abstract: An electron-emitter having a lower non-insulating emitter region (42), an overlying insulating layer (44), and a gate layer (48A, 60A, 60B, 120A, or 180A/184) is fabricated by a process in which particles (46) are distributed over one of the following layers: the insulating layer, the gate layer, a primary layer (50A, 62A, or 72) provided over the gate layer, a further layer (74) provided over the primary layer, or a pattern-transfer layer (182). The particles are utilized in defining gate openings (54, 66, 80, 122, or 186/188) through the gate layer. The gate openings are then variously employed in forming dielectric openings (56, 58, 80, 114, 128, 144, or 154) through the insulating layer. Electron-emissive elements that can, for example, be shaped like cones (58A or 70A) or like filaments (106B, 116B, 130A, 146A, or 156B) are formed in the dielectric openings.

    Abstract translation: 具有下部非绝缘发射极区域(42),上覆绝缘层(44)和栅极层(48A,60A,60B,120A或180A / 184)的电子发射体通过其中颗粒 (46)分布在以下层之一上:绝缘层,栅极层,设置在栅极层上的初级层(50A,62A或72),设置在主层上的另一层(74),或 图案转印层(182)。 这些颗粒用于通过栅极层限定栅极开口(54,66,80,122或186/188)。 然后,通过绝缘层形成电介质开口(56,58,80,114,128,144或154),各种门开口被不同地使用。 在电介质开口中形成电子发射元件,其可以例如成形为锥体(58A或70A)或类似的细丝(106B,116B,130A,146A或156B)。

    METHOD OF FABRICATING AN ELECTRON-EMITTING DEVICE
    37.
    发明申请
    METHOD OF FABRICATING AN ELECTRON-EMITTING DEVICE 审中-公开
    制造电子发射装置的方法

    公开(公告)号:WO1997046739A1

    公开(公告)日:1997-12-11

    申请号:PCT/US1997009197

    申请日:1997-06-05

    CPC classification number: H01J9/025

    Abstract: A method for creating a solid layer (36A or 52A) through which openings (38 or 54) extend entails subjecting particles (30) suspended in a fluid (26) to an electric field (EA) to cause a number of the particles to move towards, and accumulate over, a structure placed in the fluid. The structure, including the so-accumulated particles, is removed from the fluid. Solid material is deposited over the structure at least in the space between the so-accumulated particles. The particles, including any overlying material (36B or 52B), are removed. The remaining solid material forms the solid layer through which openings extend at the locations of the so-removed particles. The structure is typically a partially finished electron-emitting device. The solid layer is then typically either a gate layer for the electron-emitting device or a layer used in forming the gate layer.

    Abstract translation: 用于产生开口(38或54)延伸的固体层(36A或52A)的方法需要使悬浮在流体(26)中的颗粒(30)至电场(EA)使许多颗粒移动 朝向和积聚,放置在流体中的结构。 从流体中除去包括如此累积的颗粒的结构。 至少在所累积的颗粒之间的空间中,在该结构上沉积固体材料。 包括任何上覆材料(36B或52B)的颗粒被去除。 剩余的固体材料形成固体层,开孔在这样去除的颗粒的位置处延伸穿过该固体层。 该结构通常是部分完成的电子发射器件。 然后,固体层通常是用于电子发射器件的栅极层或用于形成栅极层的层。

    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE
    38.
    发明申请
    ELECTROCHEMICAL REMOVAL OF MATERIAL, PARTICULARLY EXCESS EMITTER MATERIAL IN ELECTRON-EMITTING DEVICE 审中-公开
    材料的电化学去除,电子发射器件中的特别发射材料

    公开(公告)号:WO1997033297A1

    公开(公告)日:1997-09-12

    申请号:PCT/US1997002973

    申请日:1997-03-05

    CPC classification number: H01J9/025

    Abstract: An electrochemical technique is employed for removing certain material from a partially finished structure without significantly chemically attacking certain other material of the same chemical type as the removed material. The partially finished structure contains a first electrically non-insulating layer (52C) consisting at least partially of first material, typically excess emitter material that accumulates during the deposition of the emitter material to form electron-emissive elements (52A) in an electron emitter, that overlies an electrically insulating layer (44). An electrically non-insulating member, such as an electron-emissive element, consisting at least partially of the first material is situated at least partly in an opening (50) extending through the insulating layer. With the partially finished structure so arranged, at least part of the first material of the first non-insulating layer is electrochemically removed such that the non-insulating member is exposed without significantly attacking the first material of the non-insulating member.

    Abstract translation: 采用电化学技术从部分完成的结构中去除某些材料,而不会显着地化学侵蚀与去除的材料相同的化学类型的某些其他材料。 部分完成的结构包含至少部分由第一材料构成的第一非绝缘层(52C),通常是在发射体材料沉积期间积累以形成电子发射器中的电子发射元件(52A)的过量发射极材料, 其覆盖电绝缘层(44)。 至少部分由第一材料组成的电绝缘构件,例如电子发射元件至少部分地位于延伸穿过绝缘层的开口(50)中。 在部分完成的结构如此布置的情况下,第一非绝缘层的第一材料的至少一部分被电化学去除,使得非绝缘构件暴露而不显着地侵害非绝缘构件的第一材料。

    MAGNETIC CURRENT SENSING AND SHORT CIRCUIT DETECTION IN A PLATE STRUCTURE
    39.
    发明授权
    MAGNETIC CURRENT SENSING AND SHORT CIRCUIT DETECTION IN A PLATE STRUCTURE 失效
    磁力探测器和短路检测的板结构

    公开(公告)号:EP1004027B1

    公开(公告)日:2006-11-22

    申请号:EP98934613.5

    申请日:1998-07-24

    CPC classification number: G09G3/006 G01R15/148 H01J9/42 H01J2329/00

    Abstract: A device (16) for sensing current flowing in a generally flat plate structure (10) contains a magnetic head (18) and signal processing circuitry (20). The magnetic head (a) senses changes in current-induced magnetic flux as the head is positioned over the plate structure and (b) provides a head output signal. The signal processing circuitry processes the head output signal to produce a data signal indicative of how much current appears to flow in the plate structure below the head. A driving voltage, which typically varies in a periodic manner to produce a characteristic signature, is applied to a primary conductor in the plate structure. When the plate structure contains a group of first electrical conductors (32) that are nominally electrically insulated from and cross a group of second electrical conductors (48), a probability analysis technique is typically performed on magnetically obtained current data to detect short circuit defects in the plate structure.

    METHODS AND SYSTEMS FOR MEASURING DISPLAY ATTRIBUTES OF A FED
    40.
    发明公开
    METHODS AND SYSTEMS FOR MEASURING DISPLAY ATTRIBUTES OF A FED 有权
    方法和装置用于在FED线逐亮度校正

    公开(公告)号:EP1402506A2

    公开(公告)日:2004-03-31

    申请号:EP02749666.0

    申请日:2002-06-24

    CPC classification number: G09G3/22 G09G2320/0233 G09G2320/0285

    Abstract: Method for compensating for brightness variations in a field emission device (100a). In one embodiment, a method and system are described for measuring the relative brightness of rows of a field emission display (FED) device (100a), storing information representing the measured brightness into a correction table and using the correction table to provide uniform row brightness in the display by adjusting row voltages and/or row on-time periods. A special measurement process is described for providing accurate current measurements on the rows. This embodiment compensates for brightness variations of the rows, e.g., for rows near the spacer walls (30). In another embodiment, a periodic signal, e.g., a high frequency noise signal (340), is added to the row on-time pulse in order to camouflage brightness variations in the rows near the spacer walls (30). In another embodiment, the area under the row on-time pulse is adjusted to provide row-by-row brightness compensation based on correction values stored in a memory resident correction table (60). In another embodiment, the brightness of each row is measured and compiled into a data profile for the FED. The data profile is used to control cathode burn-in processes so that brightness variations are corrected by physically altering the characteristics of the emitters of the rows.

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