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公开(公告)号：KR1020080032312A
公开(公告)日：2008-04-15
申请号：KR1020060097883
申请日：2006-10-09
Applicant: 삼성전자주식회사
CPC classification number: Y02A50/2347
Abstract: A method for stripping photoresist and purifying pollution sources, a method for decomposing ozone, and an apparatus for stripping the photoresist are provided to improve the rate in decomposition of ozone used for a photolithographic process. A process of stripping photoresist and purifying pollution sources is performed by removing a photoresist film from a substrate(S10), generating ozone, decomposing the removed photoresist film through reaction between the ozone and the removed photoresist film(S20), decomposing the ozone into oxygen(S30), and discharging the oxygen. The ozone is decomposed by using UV and photo-catalyst. The photo-catalyst is at least one of zinc oxide, cadmium sulfide, and tungsten oxide.
Abstract translation: 提供剥离光致抗蚀剂和净化污染源的方法，分解臭氧的方法以及剥离光致抗蚀剂的装置，以提高用于光刻工艺的臭氧分解速率。 通过从基板去除光致抗蚀剂膜（S10），产生臭氧，通过臭氧和去除的光致抗蚀剂膜之间的反应分解除去的光致抗蚀剂膜（S20），将臭氧分解成氧气，进行剥离光致抗蚀剂和净化污染源的工艺（S10） （S30），并排出氧气。 臭氧通过使用UV和光催化剂分解。 光催化剂是氧化锌，硫化镉和氧化钨中的至少一种。
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公开(公告)号：KR1020080030156A
公开(公告)日：2008-04-04
申请号：KR1020060095863
申请日：2006-09-29
Applicant: 삼성전자주식회사
IPC: H01L29/786 , G02F1/133 , G02F1/136
CPC classification number: G02F1/136227 , H01L27/124 , H01L27/1288
Abstract: A method for manufacturing a thin film transistor array panel is provided to remove easily a transparent conductive layer from a substrate by injecting a stripper onto an undercut part of a substrate. A gate line is formed on a substrate(110). A gate insulating layer is formed on the gate line. A semiconductor layer(151), a contact member layer, and a conductive layer are formed on the gate insulating layer. A semiconductor pattern, a contact member, a data line(171), and a drain electrode(175) are formed by patterning the semiconductor layer, the contact member layer, and the conductive layer. A passivation layer is formed on the data line, the drain electrode, and the gate insulating layer. A photoresist layer is formed on the passivation layer. An opening for exposing a part of the drain electrode is formed by etching the passivation layer. A transparent conductive layer is formed on the opening of the passivation layer and the photoresist layer. An inclined transfer process for the substrate is performed to form the substrate having an inclined range of 0 to 10 degrees to a horizontal plane. A stripper is injected onto the substrate at a range of 45 to 85 degrees to the substrate, in order to form a pixel electrode(191) by removing the photoresist layer and separating the transparent conductive layer from the photoresist layer.
Abstract translation: 提供一种制造薄膜晶体管阵列面板的方法，通过将剥离剂注入到基底的底切部分上，容易地从基底上去除透明导电层。 在基板（110）上形成栅极线。 在栅极线上形成栅极绝缘层。 在栅极绝缘层上形成半导体层（151），接触部件层和导电层。 通过图案化半导体层，接触构件层和导电层来形成半导体图案，接触构件，数据线（171）和漏极（175）。 在数据线，漏电极和栅极绝缘层上形成钝化层。 在钝化层上形成光致抗蚀剂层。 通过蚀刻钝化层形成用于露出一部分漏电极的开口。 在钝化层和光致抗蚀剂层的开口上形成透明导电层。 进行基板的倾斜转印工序，形成与水平面成0〜10度的倾斜范围的基板。 为了通过去除光致抗蚀剂层并将透明导电层与光致抗蚀剂层分离而形成像素电极（191），将剥离器以45至85度的范围注入衬底上。
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公开(公告)号：KR1020080001253A
公开(公告)日：2008-01-03
申请号：KR1020060059477
申请日：2006-06-29
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/136286 , H01L27/124 , H01L29/786
Abstract: An LCD(Liquid Crystal Display) panel is provided to form a thin film made from silver on a substrate composed with soda-lime glasses, thereby improving adhesion strength between the substrate and the thin film and accordingly improving a profile of the thin film. A substrate(101,111) is composed with soda-lime glasses. Gate lines are formed on the substrate. Data lines cross the gate lines. A TFT(Thin Film Transistor)(148) is connected with the gate lines(146) and the data lines(144). A pixel electrode(142) is connected with the TFT. At least one of the gate line and the data line is composed with at least one conductive layer including silver. The gate line comprises a gate metal layer made from silver, and a barrier layer formed on at least one of upper and lower parts of the gate metal layer.
Abstract translation: 提供LCD（液晶显示器）面板以在由钠钙玻璃构成的基板上形成由银制成的薄膜，从而提高基板和薄膜之间的粘合强度，从而提高薄膜的轮廓。 基体（101,111）由钠钙玻璃构成。 栅极线形成在衬底上。 数据线穿过栅极线。 TFT（薄膜晶体管）（148）与栅极线（146）和数据线（144）连接。 像素电极（142）与TFT连接。 栅极线和数据线中的至少一个由包括银的至少一个导电层构成。 栅极线包括由银制成的栅极金属层和形成在栅极金属层的上部和下部的至少一个上的阻挡层。
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公开(公告)号：KR1020070055085A
公开(公告)日：2007-05-30
申请号：KR1020050113399
申请日：2005-11-25
Applicant: 삼성전자주식회사
IPC: H01L29/786
Abstract: 본 발명은 식각공정시 노출된 식각공정의 비대상인 박막을 보호할 수 있는 박막 패터닝 방법 및 이를 이용한 박막트랜지스터 기판의 제조 방법을 제공하는 것이다.
본 발명에 따른 박막 패터닝 방법은 기판 상에 식각계열이 유사한 재질의 제1 및 제2 박막을 순차적으로 도포하는 단계와; 상기 제2 박막 상에 포토레지스트 패턴을 형성하는 단계와; 상기 포토레지스트 패턴을 이용하여 상기 제2 박막을 패터닝하는 단계와; 상기 제2 박막을 패터닝 후 상기 제2 포토레지스트 패턴에 의해 노출된 제2 박막에 반응 억제막을 형성하는 단계와; 상기 포토레지스트 패턴을 이용하여 상기 제1 박막을 패터닝하는 단계를 포함하는 것을 특징으로 한다.-
公开(公告)号：KR1020070019454A
公开(公告)日：2007-02-15
申请号：KR1020050074449
申请日：2005-08-12
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: H01L27/1262 , G02F1/1368 , H01L27/124 , H01L27/1288
Abstract: 박막 트랜지스터 기판의 제조 방법이 제공된다. 박막 트랜지스터 기판의 제조 방법은 기판 상에 게이트 전극, 반도체층, 소스 전극 및 드레인 전극을 포함하는 박막 트랜지스터를 형성하는 단계와, 박막 트랜지스터 상에 보호막을 형성하는 단계와, 보호막 상에 박막 트랜지스터 영역에 위치하는 제1 영역 및 화소 영역에 위치하고 제1 영역보다 두께가 얇은 제2 영역을 포함하며, 컨택홀을 정의하는 포토레지스트 패턴을 형성하는 단계와, 포토레지스트 패턴을 식각 마스크로 이용하여 보호막에 컨택홀을 형성하는 단계와, 포토레지스트 패턴의 제2 영역을 선택적으로 제거하는 단계와, 결과물의 전면에 도전성 산화물을 증착하여, 컨택홀을 통하여 드레인 전극과 전기적으로 연결되는 화소 전극을 형성하는 단계 및 제2 영역이 제거된 포토레지스트 패턴 및 포토레지스트 패턴 상에 존재하는 도전성 산� ��막을 포토레지스트 스트리퍼를 이용하여 제거하는 단계를 포함하되, 도전성 산화물을 증착하기 전 및/또는 후에 제2 영역이 제거된 포토레지스트 패턴을 열처리하는 단계를 포함한다.
박막 트랜지스터, 리프트 오프법, 액정 표시 장치-
Patent Agency Ranking
公开(公告)号：KR1020060040108A
公开(公告)日：2006-05-10
申请号：KR1020040089323
申请日：2004-11-04
Applicant: 삼성전자주식회사
Inventor： 정종현
IPC: G02F1/13
CPC classification number: H01L21/67075 , G02F1/13439 , G02F2001/136295 , H01L21/32134
Abstract: 식각의 균일도를 향상시키는 습식 식각장치 및 습식 식각방법에 있어서, 상기 습식 식각장치는 이송유닛, 식각액 공급유닛 및 측정유닛을 포함한다. 상기 이송유닛은 주변 영역과 중심 영역을 포함하는 기판을 제1 축방향으로 왕복 이송하며, 식각액 공급유닛은 기판에 형성된 박막을 식각하는 식각액 제공한다. 상기 측정유닛은 상기 박막의 식각 종말점을 측정하기 위해 상기 기판의 중심영역에 존재하는 박막의 식각 종말점을 측정한다. 이러한 습식 식각장치는 상기 측정유닛의 과식각 특성을 향상시킬 수 있을 뿐만 아니라 식각물이 잔류하는 문제점을 해결할 수 있다.
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公开(公告)号：KR101124569B1
公开(公告)日：2012-03-15
申请号：KR1020050049453
申请日：2005-06-09
Applicant: 삼성전자주식회사
IPC: H01L21/306 , H01L21/28
CPC classification number: C23F1/30 , H01L27/12 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/4908
Abstract: Provided are an etchant, a method for fabricating a wire using the etchant, and a method for fabricating a thin film transistor (TFT) substrate using the etchant. The etchant includes a material having the formula 1, ammonium acetic acid, and the remainder of deionized water, wherein the formula 1 is expressed by: M(OH)XLY (1) where M indicates Zn, Sn, Cr, Al, Ba, Fe, Ti, Si, or B, X indicates 2 or 3, L indicates H2O, NH3, CN, COR, or NH2R, Y indicates 0, 1, 2, or 3, and R indicates an alkyl group.
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公开(公告)号：KR1020080037343A
公开(公告)日：2008-04-30
申请号：KR1020060104303
申请日：2006-10-26
Applicant: 삼성전자주식회사
IPC: H01L29/786 , H01L21/66
Abstract: A mother substrate for a display device is provided to increase the density of a periphery of a measuring mark in a measuring unit by forming a dummy pattern at the periphery of the measuring mark. A mother substrate for a display device comprises a thin film transistor layer and a measuring unit(202). The thin film transistor layer is formed on a display cell region. The measuring unit is formed at a peripheral region enclosing the display cell region. The measuring unit includes a measuring mark(122c) and a dummy pattern(122b). The measuring mark measures an etch degree of the thin film transistor layer. The dummy pattern is densely formed at a periphery of the measuring mark. The measuring unit includes a first measuring unit, a second measuring unit, and a third measuring unit. The first measuring unit includes a first measuring mark formed of a gate metal layer and a first dummy pattern formed at a periphery of the first measuring mark. The second measuring unit includes a second measuring mark formed of a source metal layer and a second dummy pattern formed at a periphery of the second measuring mark. The third measuring unit includes a third measuring mark formed of a transparent metal layer and a first dummy pattern formed at a periphery of the third measuring mark.
Abstract translation: 提供了一种用于显示装置的母基板，用于通过在测量标记的周边形成虚拟图案来增加测量单元中的测量标记的周边的密度。 用于显示装置的母体衬底包括薄膜晶体管层和测量单元（202）。 薄膜晶体管层形成在显示单元区域上。 测量单元形成在包围显示单元区域的周边区域。 测量单元包括测量标记（122c）和虚拟图案（122b）。 测量标记测量薄膜晶体管层的蚀刻度。 伪图案在测量标记的周围密集地形成。 测量单元包括第一测量单元，第二测量单元和第三测量单元。 第一测量单元包括由栅极金属层形成的第一测量标记和形成在第一测量标记的周边处的第一虚拟图案。 第二测量单元包括由源极金属层形成的第二测量标记和形成在第二测量标记的周边处的第二虚拟图案。 第三测量单元包括由透明金属层形成的第三测量标记和形成在第三测量标记的周边处的第一虚拟图案。
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公开(公告)号：KR1020080022243A
公开(公告)日：2008-03-11
申请号：KR1020060085410
申请日：2006-09-06
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1362 , G02F2001/136231
Abstract: A display substrate and a method for manufacturing the same are provided to execute a second etching process of an exposed passivation layer through hydrogen fluoride aqueous solution for improving undercut formation, thereby uniformly etching the passivation layer. A first metal pattern containing a gate wiring(GL) and a gate electrode of a thin film transistor is formed on a substrate(100). A first insulating layer is formed on the substrate. A second metal pattern containing a data wiring(DL) and a source and drain electrodes of the thin film transistor is formed on the first insulating layer. A second insulating layer is formed on the substrate having the second metal pattern. A photoresist pattern having first and second pattern parts is formed on the second insulating layer. The first and second insulating layers are etched to expose one end of the gate wiring using an etching process through the photoresist pattern. The second pattern part is etched to expose the second insulating layer. The second insulating layer is wet-etched by hydrogen fluoride aqueous solution. A transparent electrode layer is formed on the substrate where the first pattern part remains. The etching uniformity of the passivation layer is obtained.
Abstract translation: 提供显示基板及其制造方法，以通过氟化氢水溶液执行暴露的钝化层的第二蚀刻工艺，以改善底切形成，从而均匀蚀刻钝化层。 在基板（100）上形成包含薄膜晶体管的栅极布线（GL）和栅电极的第一金属图案。 在基板上形成第一绝缘层。 在第一绝缘层上形成包含数据布线（DL）的第二金属图案和薄膜晶体管的源极和漏极。 在具有第二金属图案的基板上形成第二绝缘层。 具有第一和第二图案部分的光致抗蚀剂图案形成在第二绝缘层上。 蚀刻第一绝缘层和第二绝缘层，以通过光致抗蚀剂图案的蚀刻工艺露出栅极布线的一端。 蚀刻第二图案部分以暴露第二绝缘层。 用氟化氢水溶液湿法蚀刻第二绝缘层。 在第一图案部分保留的基板上形成透明电极层。 获得钝化层的蚀刻均匀性。
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公开(公告)号：KR1020080021863A
公开(公告)日：2008-03-10
申请号：KR1020060084957
申请日：2006-09-05
Applicant: 삼성전자주식회사
IPC: G02F1/136
CPC classification number: G02F1/1362 , G02F1/13458 , H01L29/786
Abstract: A display substrate and a method of manufacturing the display substrate are provided to form a transparent metal layer on a source metal layer so as to prevent the source metal layer from corrosion. A display substrate includes a base substrate(110), a gate line(GL) formed by sequentially laminating a first transparent layer(122) and a gate metal layer(124) on the base substrate, a source line(DL) which intersects the gate line to define a pixel region and is formed by sequentially laminating a source metal layer(152) and a second transparent metal layer(154), and a pixel electrode(PE) formed using the first transparent metal layer in the pixel region.
Abstract translation: 提供显示基板和制造显示基板的方法，以在源极金属层上形成透明金属层，以防止源极金属层腐蚀。 显示基板包括基底（110），通过在基底基板上依次层叠第一透明层（122）和栅极金属层（124）而形成的栅极线（GL），源极线 栅极线以限定像素区域，并且通过顺序层叠源极金属层（152）和第二透明金属层（154）以及在像素区域中使用第一透明金属层形成的像素电极（PE）形成。
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