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公开(公告)号：KR101684580B1
公开(公告)日：2016-12-09
申请号：KR1020150034034
申请日：2015-03-11
Applicant: 한국과학기술연구원
CPC classification number: H05K3/007 , C08L5/08 , C12N11/14 , H05K3/10 , H05K2203/0786 , H05K2203/12 , H05K2203/122 , H05K2203/1305 , H05K2203/1333
Abstract: 그래피틱물질(graphitic material) 및상기그래피틱물질에대한결합능을갖는펩티드가파지의외피단백질또는그의일부에디스플레이된파지를포함하는전자시트를제공한다.
Abstract translation: 根据本公开，可以通过将具有胶体状态的石墨材料与能够非破坏性地结合的生物材料结合来表现出优异的电性能并且允许生物材料功能化和柔性器件图案化的混合电子薄片。 由于电子薄片是生物材料和电气材料（石墨材料）杂化的电子薄片，它与生物材料表现出良好的相容性，并且可以用例如选择性地与生物化学物质反应的酶进一步官能化。 因此，电气材料和化学或生物材料可以有效地纳米结构化，并且可以实现为多功能，高性能的电子薄片。
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公开(公告)号：KR1020140072983A
公开(公告)日：2014-06-16
申请号：KR1020120140275
申请日：2012-12-05
Applicant: 한국과학기술연구원
IPC: H01L29/78 , H01L21/336
CPC classification number: H01L29/66984
Abstract: The present invention relates to a lateral spin device. The lateral spin device comprises: a transmission channel which is formed on a substrate; a source which is formed on the transmission channel; and a drain which comprises a drain free layer, a drain middle layer, and a drain fixing layer which are formed on the transmission channel. In the drain, the magnetic direction of the drain free layer against the drain fixing layer is changed by spin electrons which are injected from the source and diffused by the transmission channel.
Abstract translation: 本发明涉及一种横向纺丝装置。 横向自旋装置包括：形成在基板上的传输通道; 形成在传输信道上的源; 以及包括形成在传输通道上的无漏极层，漏极中间层和漏极固定层的漏极。 在漏极中，针对漏极固定层的无漏极层的磁方向由从源极注入并由传输沟道扩散的自旋电子改变。
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公开(公告)号：KR1020100028727A
公开(公告)日：2010-03-15
申请号：KR1020080087586
申请日：2008-09-05
Applicant: 한국과학기술연구원
IPC: H01L29/78
CPC classification number: H01L29/66984
Abstract: PURPOSE: A spin transistor with enhanced spin injection efficiency is provided improve the spin injection efficiency into a semiconductor channel from a ferromagnetic material by using a MgO tunneling film/ semiconductor lamination structure. CONSTITUTION: A spin transistor(10) comprises a semiconductor substrate(12), a ferromagnetic material source(11), a ferromagnetic material drain(13), a gate electrode(14), and a MgO tunneling film or the organic tunneling film(23). The semiconductor substrate comprises a channel layer(7). The spin-polarized electronic is passed through the channel layer. The ferromagnetic material source implants the electronics spin-polarized to the channel layer. The ferromagnetic material drain detects the spin of the electronics passing through the channel layer. The gate electrode is formed between the source and the drain. A gate voltage is applied to the gate electrode.
Abstract translation: 目的：提供自旋注入效率提高的自旋晶体管通过使用MgO隧道膜/半导体层压结构，提高了从铁磁材料的半导体通道中的自旋注入效率。 构造：自旋晶体管（10）包括半导体衬底（12），铁磁材料源（11），铁磁材料漏极（13），栅电极（14）和MgO隧穿膜或有机隧穿膜 23）。 半导体衬底包括沟道层（7）。 自旋极化电子通过沟道层。 铁磁材料源将电子自旋极化注入沟道层。 铁磁材料漏极检测穿过沟道层的电子器件的旋转。 栅电极形成在源极和漏极之间。 栅极电压施加到栅电极。
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公开(公告)号：KR1020090036281A
公开(公告)日：2009-04-14
申请号：KR1020070101363
申请日：2007-10-09
Applicant: 한국과학기술연구원
IPC: B82B1/00 , H01L21/027 , B82Y25/00
CPC classification number: H01L21/0274 , B82B1/00 , B82Y25/00
Abstract: A magnetic-nanoparticles/magnetic-semiconductors hybrid type spin device is provided to diversify resistance of magnetic semiconductor by controlling an electron spin property according to a localized and uneven magnetic field. A magnetic-nanoparticles/magnetic-semiconductors hybrid type spin device comprises: a magnetic semi-conductor thin film formed on a substrate; a conductive channel(11) formed on the magnetic semi-conductor thin film; an insulating layer(12) formed on the conductive channel; an electrical connection terminal formed by removing some parts of the insulating layer; and a magnetic-nanoparticles array(13) formed on the conductive channel. The magnetic semi-conductor thin film represents a single crystal thin film which has thickness of 10-1000 nanometers and shows semiconductor and ferromagnetic characteristics.
Abstract translation: 提供磁 - 纳米颗粒/磁半混合型自旋装置，通过根据局部和不均匀的磁场控制电子自旋特性来使磁半导体的电阻分散。 磁性纳米颗粒/磁性半导体混合型自旋装置包括：形成在基板上的磁性半导体薄膜; 形成在所述磁性半导体薄膜上的导电沟道（11）; 形成在所述导电通道上的绝缘层（12） 通过去除所述绝缘层的一些部分而形成的电连接端子; 和形成在导电通道上的磁 - 纳米颗粒阵列（13）。 磁性半导体薄膜表示厚度为10-1000纳米的单晶薄膜，具有半导体和铁磁特性。
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公开(公告)号：KR100855105B1
公开(公告)日：2008-08-29
申请号：KR1020070058532
申请日：2007-06-14
Applicant: 한국과학기술연구원
IPC: H01L27/105 , H01L29/82
CPC classification number: G11C11/16 , H01L29/20 , H01L29/66984
Abstract: A spin transistor using perpendicular magnetization is provided to easily miniaturize a spin transistor while enabling resistance adjustment caused by a gate by forming a ferromagnetic source/drain whose magnetization direction is perpendicular to the upper surface of a channel layer. A channel layer(7) is formed in a semiconductor substrate(10). A ferromagnetic source(22) and a ferromagnetic drain(23) are disposed on the semiconductor substrate, separated from each other and magnetized in a direction perpendicular to the upper surface of the channel layer. A gate(15) is formed on the semiconductor substrate between the source and the drain, adjusting the spin direction of electrons passing through the channel layer. Spin-polarized electrons are implanted from the source to the channel layer, and the implanted electrons pass through the channel layer and are implanted into the drain. When the electron passes through the channel layer, the spin of the electron processes according to the voltage of the gate by a spin-orbit coupling inducing magnetic field(14). The magnetization direction of the source and the drain is uniformly fixed during an on-and-off operation. In the source and the drain, a ferromagnetic thin film and a non-magnetic thin film can be stacked alternately and repeatedly in a direction perpendicular to the upper surface of the channel layer.
Abstract translation: 提供使用垂直磁化的自旋晶体管，以通过形成其磁化方向垂直于沟道层的上表面的铁磁源极/漏极实现由栅极引起的电阻调节，从而容易地使自旋晶体管小型化。 在半导体衬底（10）中形成沟道层（7）。 铁氧体源（22）和铁磁性漏极（23）设置在半导体衬底上，彼此分离并在与沟道层的上表面垂直的方向上磁化。 在源极和漏极之间的半导体衬底上形成栅极（15），调整通过沟道层的电子的自旋方向。 自旋极化电子从源极注入到沟道层，并且注入的电子通过沟道层并且被注入到漏极中。 当电子通过沟道层时，电子自旋根据栅极的电压通过自旋 - 轨道耦合诱导磁场进行处理（14）。 源极和漏极的磁化方向在开 - 关操作期间均匀地固定。 在源极和漏极中，铁磁薄膜和非磁性薄膜可以在与沟道层的上表面垂直的方向上交替重复堆叠。
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Patent Agency Ranking
公开(公告)号：KR100704544B1
公开(公告)日：2007-04-09
申请号：KR1020050041684
申请日：2005-05-18
Applicant: 한국과학기술연구원
Abstract: 본 발명은 스핀분극에 의한 전위차를 이용한 자기 메모리 소자 및 그 제조방법에 관한 것으로, 특히 화합물 반도체 2차원 전자우물층과 강자성체로 구성되고, 자화방향에 따른 전위차를 이용한 비 휘발성 스핀 메모리 소자에 관한 것이다.
본 발명의 스핀분극에 의한 전위차를 이용한 자기 메모리 소자는 2차원 전자우물층에서 스핀분극을 이용하여 강자성체와의 접합을 통해 평행 또는 반평행에서 나타나는 전위차를 이용하는 것을 특징으로 한다.
본 발명의 스핀분극에 의한 전위차를 이용한 자기 메모리 소자 제조방법은 화합물 반도체 기판 상에 2차원 전자우물층을 포함한 웨이퍼를 성장시키는 제1단계; 상기 결과물에 리쏘그래피(lithography) 공정과 이온밀링(ion-milling)을 이용하여 워드라인을 정의하는 2단계; 상기 결과물 상에서 상기 워드라인이 증착되지 않은 부분에 산화막을 증착하는 제3단계; 전자빔 리소그래피와 스퍼터를 이용하여 상기 워드라인 상에 강자성체를 증착하는 제4단계; 및 상기 결과물을 패터닝하여 Al이나 Au을 증착하고, 비트라인을 형성하는 제5단계;을 포함한다.
스핀분극 메모리 소자, 2차원 전자우물층, 전위차-
公开(公告)号：KR1020040021459A
公开(公告)日：2004-03-10
申请号：KR1020020053306
申请日：2002-09-04
Applicant: 한국과학기술연구원
IPC: H01L43/00 , C30B29/38 , H01F10/193
CPC classification number: B82Y25/00 , B82Y40/00 , H01F1/404 , H01F10/193 , H01F10/3213 , H01F41/30 , H01L21/0242 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/0262 , H01L21/02631 , H01L29/66984 , H01L33/40 , H01L43/08 , H01L43/10
Abstract: PURPOSE: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE(Plasma-enhanced Molecular Beam Epitaxy) method and an electronic device using the same are provided to apply the magnetic semiconductor to a spin electron device by obtaining a characteristic of the magnetic semiconductor in the room temperature. CONSTITUTION: A room temperature operating ferromagnetic semiconductor fabricated by a PEMBE method includes a compound semiconductor of the third to the fifth group. The compound semiconductor is formed with one element A selected from Ga, Al, and In and one element B selected from N and P. The element A of the compound semiconductor is replaced by one element C selected from Mn, Mg, Co, Fe, Ni, Cr, and V. The Curie temperature of the room temperature operating magnetic semiconductor is more than the room temperature.
Abstract translation: 目的：提供通过PEMBE（等离子体增强分子束外延）方法制造的室温操作铁磁半导体和使用其的电子器件，以通过获得磁性半导体的特性，将磁性半导体施加到自旋电子器件 室内温度。 构成：通过PEMBE法制造的室温操作铁磁半导体包括第三至第五组的化合物半导体。 化合物半导体由选自Ga，Al和In的一种元素A和选自N和P的一种元素B形成。化合物半导体的元素A被选自Mn，Mg，Co，Fe， Ni，Cr和V.室温操作磁性半导体的居里温度大于室温。
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公开(公告)号：KR101922500B1
公开(公告)日：2018-11-28
申请号：KR1020170078699
申请日：2017-06-21
Applicant: 한국과학기술연구원
Abstract: 본발명은커패시턴스-타입센서및 이의제조방법에관한것이다. 본발명의일 실시예에따른커패시턴스-타입센서(10)는, 기판(100), 기판(100) 상에형성되고, 탄소물질을포함하는탄소전극막(200), 탄소전극막(200) 상에형성된절연막(300), 절연막(300) 상의적어도일부에형성된적어도하나의전극(400) 및전극(400)의적어도일부를커버하며절연막(300) 상에형성된감지막(500)을포함하는것을특징으로한다.
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公开(公告)号：KR1020160041735A
公开(公告)日：2016-04-18
申请号：KR1020150034035
申请日：2015-03-11
Applicant: 한국과학기술연구원
CPC classification number: C07K4/00 , C01B32/05 , C01B32/158 , C01B32/182 , C01B32/20 , C07C15/00 , C07K4/02 , C40B40/10 , G01N33/0047
Abstract: XSXAAXXP(서열번호 1), XXPXXAXP(서열번호 2), SXAAXXP(서열번호 3) 또는 XPXXAXP(서열번호 4)를포함하는그래피틱물질또는휘발성유기화합물에결합하는펩티드를제공한다.
Abstract translation: 提供了与石墨材料或挥发性有机化合物结合的肽。 该肽包含由SEQ ID NO：1表示的X_2SX_1AAX_2X_3P，由SEQ ID NO：2表示的X_2X_2PX_3X_2AX_3P，由SEQ ID NO：3表示的SX_1AAX_2X_3P，或由SEQ ID NO：4表示的X_2PX_3X_2AX_3P。
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