公开(公告)号：KR100466542B1

公开(公告)日：2005-01-15

申请号：KR1020020070287

申请日：2002-11-13

Applicant: 한국전자통신연구원

Inventor： 김천수 ,  박필재 ,  박문양 ,  유현규

IPC: H01L27/04

CPC classification number: H01L28/10 ,  H01F17/0013 ,  H01F21/12 ,  H01L23/5227 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Disclosed is a stacked variable inductors manufactured by stacking M (M>=2) metal layers on a semiconductor substrate, and provides stacked variable inductors comprising, 1 to N inductors continuously connected in serial, wherein each of said inductors is formed on N (N

Abstract translation: 本发明公开了通过堆叠中号制造的叠层可变电感器（M＆GT; = 2）在半导体衬底上的金属层，并提供叠层可变电感器，其包含1至串行连续地连接N个电感，其中每个所述电感器是在N（N＆LT形成 ; = M）彼此不同的金属层; 第一和第二端口，每个连接到所述1到N个电感器中位于最高位置的电感器和位于最低位置的电感器; 以及至少一个MOSFET，并且其中至少一个MOSFET的一个端子连接到所述第一和第二端口中的一个，并且另一个连接到在1到N个电感器之间串联连接的相邻端子中的一个。

公开(公告)号：KR100441985B1

公开(公告)日：2004-07-30

申请号：KR1020010070752

申请日：2001-11-14

Applicant: 한국전자통신연구원

Inventor： 유현규 ,  한선호 ,  박문양 ,  박필재 ,  김남수 ,  김천수 ,  김성도 ,  윤용식

IPC: H01P1/15

CPC classification number: H03H7/0115 ,  H03H2001/0085

Abstract: The present invention relates to an integrated filter circuit for digitally controlling characteristics of inductor and capacitor to thereby produce a controlled resonant frequency. The integrated circuit includes a number of inductors being connected in series between a high frequency input node and a high frequency output node, a plurality of capacitors each connected to a connection node of said each inductors, a plurality of switches, each connected between each capacitor and a ground and a feedback control unit for controlling the switches by sensing an output signal from the high frequency output node to thereby selectively couple each capacitor to the ground through a selected switches based on the sensed output signal.

Abstract translation: 本发明涉及一种用于数字控制电感器和电容器的特性从而产生受控谐振频率的集成滤波器电路。 集成电路包括串联连接在高频输入节点和高频输出节点之间的多个电感器，多个电容器，每个电容器连接到所述每个电感器的连接节点，多个开关，每个开关连接在每个电容器 以及接地和反馈控制单元，用于通过感测来自高频输出节点的输出信号来控制开关，从而基于感测到的输出信号通过选择的开关选择性地将每个电容器耦合到地。

公开(公告)号：KR1020030047566A

公开(公告)日：2003-06-18

申请号：KR1020010078269

申请日：2001-12-11

Applicant: 한국전자통신연구원

Inventor： 박필재 ,  유현규

IPC: H04B1/16

CPC classification number: H04B1/1027 ,  H03D7/18 ,  H04B2001/1072

Abstract: PURPOSE: An RF(Radio Frequency) receiver is provided to obtain a baseband signal and an IF(Intermediate Frequency) in which an image signal is cancelled by selectively inactivating frequency converters and obtaining a desired IF. CONSTITUTION: An LNA(Low Noise Amplifier)(103) amplifies a signal received through an antenna(101). The first frequency mixer unit including frequency converters(104,109) receives a signal outputted from the LNA(103), and outputs an in-phase signal and a quadrature phase signal of an IF. Variable gain amplifiers(105,110) amplify the signals outputted from the first frequency mixer unit. The second frequency mixer unit including frequency converters(112,114,116,117) receives the signals outputted from the variable gain amplifiers(105,110), and outputs an in-phase signal and a quadrature phase signal of a baseband. Switches(113,115) selectively inactivate the frequency converters(112,114,116,117) of the second frequency mixer unit. Adders(118,121) add the in-phase signal and the quadrature phase signal outputted from inactivated frequency converters of the second frequency mixer unit.

Abstract translation: 目的：提供RF（射频）接收机以获得通过选择性地使变频器失活并获得期望的IF来消除图像信号的基带信号和IF（中频）。 构成：LNA（低噪声放大器）（103）放大通过天线（101）接收的信号。 包括频率转换器（104,109）的第一混频器单元接收从LNA（103）输出的信号，并输出IF的同相信号和正交相位信号。 可变增益放大器（105,110）放大从第一混频器单元输出的信号。 包括变频器（112,114,116,117）的第二混频器单元接收从可变增益放大器（105,110）输出的信号，并输出基带的同相信号和正交相位信号。 开关（113,115）选择性地使第二混频器单元的变频器（112,114,116,117）失活。 加法器（118,121）添加从第二混频器单元的非激活变频器输出的同相信号和正交相位信号。

公开(公告)号：KR1020030001044A

公开(公告)日：2003-01-06

申请号：KR1020010037363

申请日：2001-06-28

Applicant: 한국전자통신연구원

Inventor： 유현규 ,  장재홍 ,  김충기 ,  김성도 ,  윤용식 ,  박필재 ,  김천수 ,  황남 ,  박정우

IPC: H01L29/93

Abstract: PURPOSE: A variable passive device is provided to reduce a serial resistance and a serial loss of a varactor by connecting the varactor with a capacitor in parallel. CONSTITUTION: An N-type well region(26) is formed in the inside of a P-type substrate. A P+ diffusion region(22) and an N+ diffusion region(23) are formed in a predetermined interval in the inside of the N-type well region. An oxide layer is deposited on an upper portion of the N+ diffusion region(23). A polysilicon layer(25) is formed thereon. The P+ diffusion region(22) is connected with the polysilicon layer(25) by using a metal(21). An MOS is formed with the metal(21), the polysilicon layer(25), and the N+ diffusion region(23). A PN varactor is formed with the metal(21), the P+ diffusion region(22), the N+ diffusion region(23), and a metal(21a). The metal(21) is connected with a connection point(24) of the MOS and the P+ diffusion region(22). The P+ diffusion region(22) is used as one terminal of the PN varactor. The N+ diffusion region(23) is connected with the metal(21a).

Abstract translation: 目的：提供可变无源器件，通过并联连接变容二极管和电容器来减少串联电阻和变容二极管串联损耗。 构成：在P型衬底的内部形成有N型阱区（26）。 在N型阱区域的内部，以规定间隔形成P +扩散区域（22）和N +扩散区域（23）。 氧化物层沉积在N +扩散区（23）的上部。 在其上形成多晶硅层（25）。 P +扩散区域（22）通过使用金属（21）与多晶硅层（25）连接。 金属（21），多晶硅层（25）和N +扩散区（23）形成MOS。 PN变容二极管与金属（21），P +扩散区（22），N +扩散区（23）和金属（21a）形成。 金属（21）与MOS和P +扩散区（22）的连接点（24）连接。 P +扩散区域（22）用作PN变容二极管的一个端子。 N +扩散区域（23）与金属（21a）连接。