Abstract:
다중 빔 안테나 시스템 및 이의 출력 전력 제어 방법을 공개한다. 본 발명은 빔으로 출력하고자 하는 복수개의 입력 신호를 수신하고, 수신된 복수개의 입력 신호 각각을 복수개로 분할하고, 분할된 복수개의 입력 신호 각각의 크기 및 위상을 조절하고 결합하여 복수개의 여기 신호를 출력하는 빔 포밍 네트워크, 빔 포밍 네트워크부에서 인가되는 복수개의 여기 신호 중 대응하는 여기 신호들을 수신하고, 수신된 여기 신호의 출력 전력을 통신량에 따라 제어하는 복수개의 MPA를 구비하는 MPA부, 및 MPA부에서 인가되는 여기 신호의 크기 및 위상에 따라 여기되어 다중 빔을 방출하는 복수개의 급전 소자를 구비하는 배열 소자부를 포함한다.
Abstract:
본 발명은 음향 다중 극자 어레이를 구성하는 제1, 2 음향 소자를 서로 다른 음향 특성을 갖도록 또는 서로 동일한 음향 특성을 갖도록 각각 패키징하고, 전방과 후방에 상기 제1, 2 음향 소자를 서로 나란히 배열한 후, 상기 제1, 2 음향 소자에 동일한 크기를 가지면서 서로 다른 위상을 갖는 음원을 각각 입력하여 전방으로의 지향 특성이 향상되도록 하면서 후방으로의 방사 특성이 저감되도록 한 것을 특징으로 한다. 음향 다중 극자, 쌍극자, 단극자, 지향
Abstract:
PURPOSE: A directional speaker module for a portable terminal is provided to freely change an acoustic output direction, thereby providing a sound with a real site feeling without auditory disturbance. CONSTITUTION: A directional speaker module(100) for a portable terminal is made of a pair of acoustic sound monopoles. A meandering acoustic wave guide(W) is formed between two acoustic sound monopoles. A phase change value increases due to a transfer route of an acoustic signal of a lower acoustic sound monopole. The route is lengthened by the acoustic wave guide.
Abstract:
PURPOSE: A security system is provided to perform an operation under low power and to enhance reliability by using an ultrasonic method. CONSTITUTION: A security system includes a sound source generation unit(100) and a sound measurement unit(110). The sound source generation unit generates a sound source. The sound measurement unit measures a sound field formed through the sound source. The sound measurement unit compares the initially set sound field with the measured sound field to sense the generation of the invasion. The sound measurement unit includes one or more sound sensors. The sound measurement unit obtains a sound pressure rate and a phase difference between the measured positions and models the sound field.
Abstract:
PURPOSE: A folding type directional speaker array module is provided to obtain the directivity of a high frequency band through a central speaker module, thereby obtaining superior directivity performance over the entire frequency band. CONSTITUTION: A side speaker module(200B) is folded toward both sides of a central speaker module(200A). The folded side speaker module is placed on the upper part or the lower part of the central speaker module. The side speaker module is unfolded toward both sides of the central speaker module. The directivity of a high frequency band and the directivity of a low frequency band are obtained through the central speaker module and the side speaker module respectively.
Abstract:
PURPOSE: An own generating multi-functional sensor and a manufacturing method thereof are provided to enable own power-generation with low consumable power and reduce the size of elements despite collecting various environmental information. CONSTITUTION: An own generating multi-functional sensor comprises an ultraviolet ray sensor(101), a temperature sensing unit(102), a humidity sensor(103), a heater(104), a gas detector unit(105), a vibration sensor(106), and a own generation unit(107). The elements are formed on one substrate(111). A laminating structure made of electrode and multi-functional materials is formed on the substrate. The sensors acquire different environmental information. The own generation unit is formed on the substrate wherein a fist bottom electrode, a multi-functional material, and a first top electrode are laminated. The own generation unit greatens electricity by applied vibration.
Abstract:
A formation method of ZnO nanowire network pattern is provided to form ZnO nanowire network pattern and device of a desired shape and size at a low temperature with a stable yield by using a lithographic process and a sol-gel method. A formation method of ZnO nanowire network pattern comprises steps of: forming a photoresist pattern exposing a part of a substrate on the substrate; molding the ZnO nanowire network on a photoresist pattern and an exposed part of the substrate by a sol-gel method; and removing the photoresist pattern and forming the ZnO nanowire network pattern on the substrate. The step for forming the photoresist pattern comprises steps of: coating a photoresist on the substrate; exposing the photoresist; and developing the exposed photoresist.
Abstract:
A method for manufacturing an electronic device using a nanowire is provided to reduce a manufacturing cost and a manufacturing time for the electronic device by reducing a process using an E-beam. An electrode is formed on a substrate(S11). Plural nanowires are applied on the substrate on which the electrode is formed(S12). An image with respect to the substrate on which the nanowire and the electrode are formed is captured(S13). A virtual connection line connecting the nanowire to the electrode is drawn on the image by using an electrode pattern simulated through a computer program(S14). A photoresist for an E-beam is applied onto the substrate(S15). The photoresist formed on a position corresponding to the virtual connection line and the electrode pattern is removed by an E-beam lithography process(S16). A metal layer is deposited on the substrate(S17). The photoresist remaining on the substrate is removed by a lift-off process(S18).
Abstract:
A method for fabricating a nano wire array device is provided to embody a large-scale nano wire array device even when a nano wire is not parallel with an electrode line by selectively etching a nano wore on a substrate and by patterning an electrode line in a manner that the electrode becomes vertical to the electrode line to improve a probability that the electrode is connected to the nano wire. A nano wire solution including a nano wire(50) is deposited on a substrate. A first etch region of a stripe type is formed on the substrate to pattern the nano wire. A drain electrode line(100) and a source electrode line(200) are formed at both sides of the patterned nano wire, parallel with each other. One end of a plurality of drain electrodes(110) is connected to the drain electrode line wherein the drain electrode comes in contact with at least one nano wire. One end of a plurality of source electrodes(210) is connected to the source electrode line wherein the source electrode comes in contact with the nano wire in contact with the drain electrode. A second etch region is formed between the pair of drain electrodes and source electrodes so that the pair of drain electrodes and source electrodes don't contact each other electrically. An insulation layer(800) is formed on the substrate. A gate electrode(300) is formed on the insulation layer, disposed between the source and drain electrodes in contact with the nano wire.