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公开(公告)号：KR1020030056574A
公开(公告)日：2003-07-04
申请号：KR1020010086836
申请日：2001-12-28
Applicant: 한국전자통신연구원
CPC classification number: H01J9/025 , H01J2201/30403 , H01J1/30 , B82Y40/00 , C01B32/05
Abstract: PURPOSE: A field emission display and a fabricating method thereof are provided to lower a driving voltage and reduce the power consumption by forming a hole of a nano size and an emitter therein to an aspect ratio of the emitter. CONSTITUTION: A field emission display includes a silicon substrate(21), an emitter electrode(24), an insulating layer(25), a nano hole(27), an emitter(29), and a gate electrode(26). The emitter electrode is formed on an upper portion of the silicon substrate. The insulating layer is formed on an upper portion of the emitter electrode. The nano hole of a nano size is formed on the insulating layer in order to expose the emitter electrode. The emitter is formed in the inside of the nano hole. The gate electrode is formed on an upper portion of the insulating layer. The emitter electrode is formed with a doped region of the silicon substrate. A catalytic layer(28) is formed between the emitter and the emitter electrode.
Abstract translation: 目的：提供场致发射显示器及其制造方法以通过在其中形成纳米尺寸的孔和发射体来降低驱动电压并降低功耗，使发射极的纵横比成比例。 构成：场发射显示器包括硅衬底（21），发射极（24），绝缘层（25），纳孔（27），发射极（29）和栅电极（26）。 发射电极形成在硅衬底的上部。 绝缘层形成在发射电极的上部。 在绝缘层上形成纳米尺寸的纳米孔，以露出发射电极。 发射极形成在纳米孔的内部。 栅电极形成在绝缘层的上部。 发射电极形成有硅衬底的掺杂区域。 催化剂层（28）形成在发射极和发射极之间。
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公开(公告)号：KR1020030054760A
公开(公告)日：2003-07-02
申请号：KR1020010085167
申请日：2001-12-26
Applicant: 한국전자통신연구원
IPC: G01B11/14
Abstract: PURPOSE: A gap measuring apparatus for a solid immersion lens is provided to easily measure a gap formed between a storage medium and the solid immersion lens by detecting a distribution of interference signals. CONSTITUTION: A gap measuring apparatus includes a refracting device(201), and a light detecting device(202). The refracting device(201) allows internal total-reflection light(204) reflected from a lower plane(104a) of a solid immersion lens and transmission light(205) reflected from a surface of a storage medium(105) to be focused at one spot. The light detecting device(202) detects a light intensity distribution of an interference signal generated by the refracting device(201). The refracting device(201) includes at a refractive optical device having at least one lens. The light detecting device(202) includes photoelectronic device or a charge coupled device.
Abstract translation: 目的：提供一种用于固体浸没透镜的间隙测量装置，用于通过检测干涉信号的分布来容易地测量形成在存储介质和固体浸没透镜之间的间隙。 构成：间隙测量装置包括折射装置（201）和光检测装置（202）。 折射装置（201）允许从固体浸没透镜的下平面（104a）反射的内部全反射光（204）和从存储介质（105）的表面反射的透射光（205）聚焦在一个 点。 光检测装置（202）检测由折射装置（201）产生的干涉信号的光强度分布。 折射装置（201）包括具有至少一个透镜的折射光学装置。 光检测装置（202）包括光电子器件或电荷耦合器件。
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公开(公告)号：KR100388060B1
公开(公告)日：2003-06-18
申请号：KR1020000080800
申请日：2000-12-22
Applicant: 한국전자통신연구원
IPC: G11B7/124 , G11B7/1353 , G11B7/1387
Abstract: PURPOSE: An optical data storage device using an SIL(Solid Immersion Lens) and a waveguide diffraction grating coupler is provided to install an optical storage head device combining the waveguide diffraction grating coupler with the SIL and a cartridge, and to use an optical fiber for inducing light, thereby obtaining high storage density without polluting a head of an optical storage device and a storage medium. CONSTITUTION: A recording medium(101) rotates on the basis of the first rotation hub in a cartridge. One end of a rotary arm(102) is fixed into the second rotation hub in the cartridge. A flying head(104) is attached to a free end of the rotary arm, and writes data on the recording medium or reads the data from the recording medium. An optical waveguide is installed up to outside of the cartridge from the flying head. The rotary arm rotates within an angle where the rotary arm is capable of guiding the flying head up to an utmost inner track from an utmost outer track of the cartridge.
Abstract translation: 目的：提供一种使用SIL（固体浸没透镜）和波导衍射光栅耦合器的光学数据存储装置，用于安装将波导衍射光栅耦合器与SIL和盒子组合在一起的光学存储头装置，并且使用用于 诱导光，从而获得高存储密度而不会污染光学存储装置和存储介质的头部。 构成：记录介质（101）以盒中的第一旋转毂为基础旋转。 旋转臂（102）的一端固定在盒中的第二旋转毂内。 飞行头（104）连接在旋转臂的自由端上，并将数据写入记录介质或从记录介质读取数据。 光学波导从飞行头安装到盒的外部。 旋转臂在一定角度内旋转，其中旋转臂能够从盒的最外部轨道将飞行头引导至最内部的轨道。
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公开(公告)号：KR100378597B1
公开(公告)日：2003-04-03
申请号：KR1020000080802
申请日：2000-12-22
Applicant: 한국전자통신연구원
CPC classification number: H01J31/127
Abstract: A high-resolution field emission display that applies a field emission device(or a field emission array) being an electron source element to a flat panel display device. The field emission display includes an upper plate and a lower plate that fac each other, wherein the lower plate and the upper plate are vacuum-packaged in parallel positions. A dot pixel of the lower plate includes a high-voltage amorphous silicon thin film transistor formed on the glass substrate of the lower plate, a diode type field emission film partially formed on the drain of the high-voltage amorphous silicon TFT, a passivation insulation layer formed on the high-voltage amorphous silicon TFT and the lateral side of the diode type field emission film, and an electron beam focusing electrode/light-shading film which vertically overlaps with the high-voltage amorphous silicon TFT on some parts of the passivation insulation layer and is formed on a lateral side of the diode type field emission film. A dot pixel of the upper plate includes a transparent electrode formed on the glass substrate of the upper plate, and a red, green or blue phosphor formed on some parts of the transparent electrode. Therefore, the high-resolution field emission display device can obtain an effect of focusing the electron beam trajectory and a light-shading effect for the TFT at the same time, and thus remarkably enhance the performance and the resolution of the field emission display.
Abstract translation: 一种高分辨率场发射显示器，其将作为电子源元件的场发射装置（或场发射阵列）应用于平板显示装置。 场发射显示器包括彼此相对的上板和下板，其中下板和上板被平行地真空包装。 下板的点像素包括形成在下板的玻璃基板上的高压非晶硅薄膜晶体管，部分形成在高压非晶硅TFT的漏极上的二极管型场发射膜，钝化绝缘层 形成在高压非晶硅TFT和二极管型场致发射膜的侧面上的电子束聚焦电极/遮光膜以及在钝化的一些部分上与高压非晶硅TFT垂直交叠的电子束聚焦电极/ 绝缘层并形成在二极管型场发射膜的侧面上。 上板的点像素包括在上板的玻璃基板上形成的透明电极以及在透明电极的一些部分上形成的红色，绿色或蓝色磷光体。 因此，高分辨率场致发射显示装置可以同时获得聚焦电子束轨迹和遮光效果的效果，从而显着提高了场发射显示器的性能和分辨率。
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公开(公告)号：KR100377183B1
公开(公告)日：2003-03-26
申请号：KR1020000063959
申请日：2000-10-30
Applicant: 한국전자통신연구원
IPC: G11C11/22
Abstract: PURPOSE: A single transistor ferroelectric memory and a method for driving the same are provided to prevent a write disturbing effect of a non-selected cell by a word line. CONSTITUTION: A main control portion(50) is used for generating basic control signals of a single transistor ferroelectric memory. A word line control portion(52) and a source line control portion(53) are used for selecting particular cells according to input addresses and generating voltages for selected cells. A read voltage generation portion(51) is used for generating a read voltage when a read operation is performed. A word line selection portion(54) is used for applying selectively the voltage to the selected word line. A multitude of word line, a multitude of bit line, a source line, and a ferroelectric transistor are formed on a memory cell array(55). A bit line control portion(56) is used for determining a type of memory output. A sense amplifier portion(57) is used for sensing the voltage of the selected cell and the voltage of non-selected cell when the read operation is performed.
Abstract translation: 目的：提供一种单晶体管铁电存储器及其驱动方法，以防止字线对非选择单元的写入干扰效应。 构成：主控制部分（50）用于产生单个晶体管铁电存储器的基本控制信号。 字线控制部分（52）和源极线控制部分（53）用于根据输入地址选择特定的单元并为所选单元产生电压。 读取电压产生部分（51）用于在执行读取操作时产生读取电压。 字线选择部分（54）用于选择性地向所选字线施加电压。 在存储单元阵列（55）上形成多个字线，多个位线，源极线和铁电晶体管。 位线控制部分（56）用于确定存储器输出的类型。 感测放大器部分（57）用于在执行读取操作时感测所选单元的电压和未选单元的电压。
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Patent Agency Ranking
公开(公告)号：KR100373328B1
公开(公告)日：2003-02-25
申请号：KR1020000072326
申请日：2000-12-01
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A field emission display having a horizontal field emission emitter and a method for fabricating the same are provided to drive the field emission display under a low voltage by using a horizontal carbon nano tube emitter. CONSTITUTION: An insulating layer(41) is formed on a lower substrate(40). A conductive layer pattern(42) is formed on the insulating layer(41). The first insulating layer(43) having the first opening portion is formed on the conductive layer pattern(42). A plug is formed within a contact hole(44) for exposing the conductive layer pattern(42). A catalysis metal layer pattern(45) is connected with the plug of the contact hole(44). A carbon nano tube field emission emitter(46) is formed on one side of the catalysis metal layer pattern(45). The second insulating layer(47) having the second opening portion is formed on the carbon nano tube field emission emitter(46) and the first insulating layer(43). An electron beam control electrode(48) is formed on the first insulating layer(43). An anode electrode(49) is formed on one side of the first opening portion and one side of the second opening portion. A fluorescent layer(50) is formed on the anode electrode(49). An upper substrate(51) is bonded parallel with the lower substrate(40). A spacer(52) is used as a support portion.
Abstract translation: 目的：提供一种具有水平场发射发射器的场发射显示器及其制造方法，以通过使用水平碳纳米管发射器在低电压下驱动场发射显示器。 构成：绝缘层（41）形成在下基板（40）上。 导电层图案（42）形成在绝缘层（41）上。 具有第一开口部分的第一绝缘层（43）形成在导电层图案（42）上。 在用于暴露导电层图案（42）的接触孔（44）内形成插塞。 催化金属层图案（45）与接触孔（44）的插塞连接。 碳纳米管场发射发射体（46）形成在催化金属层图案（45）的一侧上。 在碳纳米管场发射发射体（46）和第一绝缘层（43）上形成具有第二开口部分的第二绝缘层（47）。 电子束控制电极（48）形成在第一绝缘层（43）上。 阳极电极（49）形成在第一开口部分的一侧和第二开口部分的一侧。 荧光层（50）形成在阳极（49）上。 上基板（51）与下基板（40）平行地接合。 间隔件（52）被用作支撑部分。
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公开(公告)号：KR100373327B1
公开(公告)日：2003-02-25
申请号：KR1020000067337
申请日：2000-11-14
Applicant: 한국전자통신연구원
Abstract: PURPOSE: An electronic element having a horizontal carbon nanotube and manufacturing method thereof are provided to adjust the length of the carbon nanotube, enhance attachment of the carbon nanotube and a substrate, and facilitate subsequent processes after carbon nanotube formation. CONSTITUTION: An electronic element comprises an insulating film(21), a catalytic metal pattern(22), a carbon nanotube(23), and a protection insulating film(24). The catalytic metal pattern(22) is formed by depositing a metal film and selectively etching the insulating film(21). The carbon nanotube(23) is grown vertically to the catalytic metal pattern(22) by a thermal chemical deposition method and a plasma chemical deposition method. The protection insulating film(24) of SOG(silicon-on-glass) is formed over the whole structure. The protection insulating film(24) is selectively removed by lithography and etching and selectively etching the carbon nanotube to regulate the non-uniformly grown nanotube.
Abstract translation: 一种具有水平碳纳米管的电子元件及其制造方法，用于调节碳纳米管的长度，提高碳纳米管与基板的附着性，并且有利于碳纳米管形成后的后续工艺。 构成：电子元件包括绝缘膜（21），催化金属图案（22），碳纳米管（23）和保护绝缘膜（24）。 催化金属图案（22）通过沉积金属膜并选择性蚀刻绝缘膜（21）而形成。 碳纳米管（23）通过热化学沉积法和等离子体化学沉积法垂直于催化金属图案（22）生长。 SOG（玻璃上硅）的保护绝缘膜（24）形成在整个结构上。 通过光刻和蚀刻选择性地去除保护绝缘膜（24），并选择性地蚀刻碳纳米管以调节不均匀生长的纳米管。
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公开(公告)号：KR100362377B1
公开(公告)日：2002-11-23
申请号：KR1020000073421
申请日：2000-12-05
Applicant: 한국전자통신연구원
Abstract: 본 발명은 탄소 나노 튜브를 이용한 전계 방출 소자에 관한 것으로, 특히, 기판에 수평 방향으로 성장된 탄소 나노 튜브를 이용한 전계 방출 소자와, 에지 에미팅(Edge Emitting) 형광 박막을 이용한 고해상도 전계 방출 디스플레이를 제작하는 방법에 관한 것이다. 본 기술은 금속 촉매를 패턴의 측벽에 선택적으로 증착시켜 탄소 나노 튜브를 촉매 금속으로부터 수평 방향으로 성장시키는 공정과, 성장시킨 탄소 나노 튜브를 도포 공정을 통해 모재에 부착시킴으로써, 이후의 반도체 공정을 자유롭게 적용시킬 수 있도록 하는 것을 주요 기술로 탄소 나노 튜브 전계 방출 에미터와 박막형으로 증착된 고정세 형광체에서의 에지 에미팅을 이용한다. 이렇게 탄소 나노 튜브를 수평 성장시켜 기판과의 밀착성이 유지되고, 박막형 형광체를 사용하여 이후의 반도체 공정을 자유롭게 적용시킬 수 있고, 이를 통해 고정세 전계 방출 디스플레이 제작이 가능하다.
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公开(公告)号：KR100340926B1
公开(公告)日：2002-06-20
申请号：KR1019990029172
申请日：1999-07-19
Applicant: 한국전자통신연구원
Abstract: 본발명은전자가흐르는방향은물론다른방향으로도수 나노미터의크기를가지며, 상온에서스위칭동작가능한공명투과트랜지스터를제공하고자하는것으로, 이를위한본 발명의공명투과트랜지스터는, 소스로서작용하는제1 탄소나노튜브; 드레인으로서작용하는제2 탄소나노튜브; 전자중첩영역을구성하는 C분자; 및상기 C분자에상기제1 및제2 탄소나노튜브를각각연결하여주면서전자의투과장벽으로작용하는금속뭉치화합물을포함하여이루어지는것을특징으로하며, 또한상기제1 탄소나노튜브와상기제2 탄소나노튜브는스위칭동작을위하여서로다른길이를갖는것을특징으로한다. 본발명에따르면, 탄소나노튜브가자연적인반도체이어서도핑의과정이필요치않고, 전자가흐르는방향뿐아니라모든방향으로나노미터크기를가져진정한의미의나노전자소자를만들수있을뿐 아니라, 분자전자소자의특징을가지고있기때문에상온에서도트랜지스터의특성인스위칭동작을이루게된다. 따라서탄소나노튜브를소스와드레인으로사용하고이들을분자레벨에서전기적으로연결하면종래의반도체보다수만배이상의집적도를가진전자소자를제작할수 있다.
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公开(公告)号：KR1020020042960A
公开(公告)日：2002-06-08
申请号：KR1020000072326
申请日：2000-12-01
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A field emission display having a horizontal field emission emitter and a method for fabricating the same are provided to drive the field emission display under a low voltage by using a horizontal carbon nano tube emitter. CONSTITUTION: An insulating layer(41) is formed on a lower substrate(40). A conductive layer pattern(42) is formed on the insulating layer(41). The first insulating layer(43) having the first opening portion is formed on the conductive layer pattern(42). A plug is formed within a contact hole(44) for exposing the conductive layer pattern(42). A catalysis metal layer pattern(45) is connected with the plug of the contact hole(44). A carbon nano tube field emission emitter(46) is formed on one side of the catalysis metal layer pattern(45). The second insulating layer(47) having the second opening portion is formed on the carbon nano tube field emission emitter(46) and the first insulating layer(43). An electron beam control electrode(48) is formed on the first insulating layer(43). An anode electrode(49) is formed on one side of the first opening portion and one side of the second opening portion. A fluorescent layer(50) is formed on the anode electrode(49). An upper substrate(51) is bonded parallel with the lower substrate(40). A spacer(52) is used as a support portion.
Abstract translation: 目的：提供具有水平场发射发射极的场发射显示器及其制造方法，以通过使用水平碳纳米管发射体来驱动低电压下的场发射显示。 构成：在下基板（40）上形成绝缘层（41）。 导电层图案（42）形成在绝缘层（41）上。 具有第一开口部分的第一绝缘层（43）形成在导电层图案（42）上。 在用于暴露导电层图案（42）的接触孔（44）内形成插塞。 催化金属层图案（45）与接触孔（44）的插塞连接。 在催化金属层图案（45）的一侧上形成碳纳米管场致发射体（46）。 具有第二开口部分的第二绝缘层（47）形成在碳纳米管场致发射体（46）和第一绝缘层（43）上。 电子束控制电极（48）形成在第一绝缘层（43）上。 阳极电极（49）形成在第一开口部分的一侧和第二开口部分的一侧。 荧光层（50）形成在阳极电极（49）上。 上基板（51）与下基板（40）平行地结合。 间隔件（52）用作支撑部分。
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