STRUCTURE AND FABRICATION OF FLAT-PANEL DISPLAY HAVING SPACER WITH LATERALLY SEGMENTED FACE ELECTRODE
    31.
    发明公开
    STRUCTURE AND FABRICATION OF FLAT-PANEL DISPLAY HAVING SPACER WITH LATERALLY SEGMENTED FACE ELECTRODE 有权
    STRUKTUR UND HERSTELLUNGSVERFAHREN EINER FLUCHARZEIGEVORRICHTUNG MIT SEITLICHEN SEGMENTIERTEN ELEKTRODE VESEEHENEN ABSTARTHALTER

    公开(公告)号:EP1068628A4

    公开(公告)日:2005-08-17

    申请号:EP99914200

    申请日:1999-03-26

    Abstract: A flat-panel display contains a pair of plate structures (40 and 42) coupled together to firm a sealed enclosure. A spacer (44) is situated in the enclosure for resisting external forces exerted on the display. The spacer is formed with a main spacer portion (60), typically shaped like a wall, and a face electrode (66) situated over a face of the main spacer portion. The face electrode causes electrons moving from one of the plate structures to the other to be defected in such a manner as to compensate for other electron deflection caused by the presence of the spacer. The face electrode is divided into multiple laterally separated segments (661 - 66N) to improve the accuracy of the compensation along the length of the spacer. In fabricating the display, a masking step is typically utilized in defining the widths of the segments of the face electrode.

    Abstract translation: 平板显示器包含耦合在一起以固定密封外壳的一对板结构(40和42)。 间隔件(44)位于外壳中以抵抗施加在显示器上的外力。 间隔物形成有通常形状像壁的主间隔物部分(60)和位于主间隔物部分的表面上的表面电极(66)。 面电极导致从一个板结构移动到另一个的电子以这种方式缺陷,以补偿由于存在间隔物而引起的其他电子偏转。 表面电极被分成多个横向分开的部分(661-66N),以提高沿间隔物长度的补偿精度。 在制造显示器时,掩模步骤通常用于限定面电极的片段的宽度。

    SYSTEM AND METHOD FOR FIELD EMISSION DISPLAYS
    32.
    发明公开
    SYSTEM AND METHOD FOR FIELD EMISSION DISPLAYS 审中-公开
    系统和方法场致发射显示器

    公开(公告)号:EP1114411A4

    公开(公告)日:2004-06-02

    申请号:EP99935552

    申请日:1999-07-14

    Abstract: A field emission display (700) having an improved operational life. In one embodiment, the field emission display (700) comprises a plurality of row lines (230), a plurality of column lines (250), and a plurality of electron emissive elements (40) disposed at intersections of the plurality of row lines (230) and column lines (250), a column driver circuit (740) and a row driver circuit (720). The column driver circuit (740) is coupled to drive column voltage signals over the plurality of column lines (250); and the row driver circuit (720) is coupled to activate and deactivate the plurality of row lines (230) with row voltage signals. According to the present invention, operation life of the field emission display is extended when the electron emissive elements are intermittently reverse-biased by the column voltage signals and the row voltage signals. In another embodiment, the row driver circuit is responsive to a SLEEP signal (770). The row driver circuit (720), upon receiving the SLEEP signal (770), drives a sleep-mode voltage over the row lines (230) to reverse-bias the electron emissive elements.

    METHOD AND APPARATUS FOR CONDITIONING A FIELD EMISSION DISPLAY DEVICE
    33.
    发明公开
    METHOD AND APPARATUS FOR CONDITIONING A FIELD EMISSION DISPLAY DEVICE 有权
    方法和设备机上的场发射显示设备

    公开(公告)号:EP1116202A4

    公开(公告)日:2003-07-09

    申请号:EP99943611

    申请日:1999-07-08

    Abstract: A method of removing contaminant particles in newly fabricated filed emission displays. Contaminant particles are removed by a conditioning process which includes the steps of: a) driving an anode (20) of a field emission display (FED) to a predetermined voltage; b) slowly increasing an emission current of the FED after the anode has reached the predetermined voltage; and c) providing an ion-trapping device for catching the ions and particles knocked off, or otherwise released, by emitted electrons (40). By driving the anode to the predetermined voltage and by slowly increasing the emission current of the FED, contaminant particles are effectively removed without damaging the FED. A method of operating FEDs is also provided to prevent gate-to-emitter current during turn-on and turn-off, which comprises the steps of: a) enabling the anode display screen (20); and b) enabling the electron-emitters (40) after the anode display screen is enabled. By allowing sufficient time for the anode display screen to reach a predetermined voltage before the emitter is enabled, the emitted electrons (40) will be attracted to the anode (20).

    STRUCTURE AND FABRICATION OF ELECTRON-EMITTING DEVICE HAVING ELECTRODE WITH OPENINGS THAT FACILITATE SHORT-CIRCUIT REPAIR
    34.
    发明公开
    STRUCTURE AND FABRICATION OF ELECTRON-EMITTING DEVICE HAVING ELECTRODE WITH OPENINGS THAT FACILITATE SHORT-CIRCUIT REPAIR 审中-公开
    STRUKTUR UND HERSTELLUNG EINER ELEKTRONENEMITTIERENDEN VORRICHTUNG MIT ELEKTRODE,MIT ZUR ERLEICHTERUNG VON KURZSCHLUSSPREPARATURVERSEHENÖFFNUNGEN

    公开(公告)号:EP1075705A4

    公开(公告)日:2001-07-25

    申请号:EP99918715

    申请日:1999-04-19

    CPC classification number: H01J3/022 H01J2329/00

    Abstract: An electrode (12 or 30) of an electron-emitting device has a plurality of openings (16 or 60) spaced laterally apart from one another. The openings can be used, as needed, in selectively separating one or more parts of the electrode from the remainder of the electrode during corrective test directed towards repairing any short-circuit defects that may exist between the electrode and other overlying or underlying electrodes. When the electrode with the openings is an emitter electrode (12), each opening (16) normally extends fully across an overlying control electrode (30). When the electrode with the openings is a control electrode (30), each opening (60) normally extends fully across an underlying emitter electrode (12). The short-circuit repair procedure typically entails directing light energy on appropriate portions of the electrode with the openings.

    Abstract translation: 电子发射器件的电极(12或30)具有多个彼此横向隔开的开口(16或60)。 根据需要,这些开口可以用于在纠正测试期间选择性地将电极的一个或多个部分从电极的其余部分分离,以指导修复可能存在于电极与其他上覆或下层电极之间的任何短路缺陷。 当具有开口的电极是发射电极(12)时,每个开口(16)通常完全跨过覆盖的控制电极(30)延伸。 当具有开口的电极是控制电极(30)时,每个开口(60)通常完全延伸穿过下面的发射电极(12)。 短路修复程序通常需要将光能引导到具有开口的电极的适当部分上。

    DEVICE FOR CONDITIONING CONTROL SIGNAL TO ELECTRON EMITTER, PREFERABLY SO THAT COLLECTED ELECTRON CURRENT VARIES LINEARLY WITH INPUT CONTROL VOLTAGE
    35.
    发明公开
    DEVICE FOR CONDITIONING CONTROL SIGNAL TO ELECTRON EMITTER, PREFERABLY SO THAT COLLECTED ELECTRON CURRENT VARIES LINEARLY WITH INPUT CONTROL VOLTAGE 失效
    DEVICE FOR TREATMENT TAX SIGNAL的电子发射器,优选用于线性改变集与规则张力电子流动在入口处

    公开(公告)号:EP0965248A4

    公开(公告)日:2000-05-31

    申请号:EP97910729

    申请日:1997-10-17

    CPC classification number: G09G3/22 G09G2310/027 G09G2320/0276 H01J2329/00

    Abstract: A voltage-adjustment section (20) of an electronic device converts an input control voltage (VI) into an output control voltage (VO) in such a way that a collector current (ICP) form with electrons emitted from an emitter (EP) of an emission/collection cell (26), or triode, varies in a desired, typically linear, manner with the input control voltage. The triode further includes a collector (CP) that carries the collector current and a gate electrode (GP) that regulates the collector current as a function of the output control voltage. Control of the collector current so as to achieve the desired current/voltage relationship is achieved with an analog control loop containing the triode and an amplifier (28) coupled between the triode's collector and gate electrode. The triode thus typically has a linear gamma characteristic relative to the input control voltage. The voltage-adjustment section is suitable for use in a display device such as a flat-panel display.

    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH
    37.
    发明公开
    SELECTIVE REMOVAL OF MATERIAL USING SELF-INITIATED GALVANIC ACTIVITY IN ELECTROLYTIC BATH 审中-公开
    材料的选择性去除采用自主发起的电偶活动在电解槽

    公开(公告)号:EP1032726A4

    公开(公告)日:2004-09-29

    申请号:EP98946862

    申请日:1998-09-21

    CPC classification number: H01J9/025

    Abstract: Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath (62). The characteristics of certain parts of the structure are chosen to have electrochemical reduction half-cell potentials that enable removal of the undesired material to be achieved in the bath without applying external potential to any part of the structure. The electrolytic bath (62) can be implemented with liquid that is inherently corrosive to, or inherently benign to, material of the chemical type being selectively removed.

    CLEANING OF ELECTRON-EMISSIVE ELEMENTS
    38.
    发明公开
    CLEANING OF ELECTRON-EMISSIVE ELEMENTS 有权
    SAÜBERUNG的电子发射元件

    公开(公告)号:EP1021818A4

    公开(公告)日:2001-04-04

    申请号:EP98950613

    申请日:1998-09-22

    CPC classification number: H01J9/025

    Abstract: Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.

    GATED ELECTRON EMISSION DEVICE AND METHOD OF FABRICATION THEREOF
    40.
    发明公开
    GATED ELECTRON EMISSION DEVICE AND METHOD OF FABRICATION THEREOF 失效
    用于生产网格控制电子装置和方法

    公开(公告)号:EP1018131A4

    公开(公告)日:2000-07-19

    申请号:EP97926809

    申请日:1997-06-05

    CPC classification number: H01J9/025 H01J2329/00

    Abstract: A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.

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