Abstract:
A flat-panel display contains a pair of plate structures (40 and 42) coupled together to firm a sealed enclosure. A spacer (44) is situated in the enclosure for resisting external forces exerted on the display. The spacer is formed with a main spacer portion (60), typically shaped like a wall, and a face electrode (66) situated over a face of the main spacer portion. The face electrode causes electrons moving from one of the plate structures to the other to be defected in such a manner as to compensate for other electron deflection caused by the presence of the spacer. The face electrode is divided into multiple laterally separated segments (661 - 66N) to improve the accuracy of the compensation along the length of the spacer. In fabricating the display, a masking step is typically utilized in defining the widths of the segments of the face electrode.
Abstract:
A field emission display (700) having an improved operational life. In one embodiment, the field emission display (700) comprises a plurality of row lines (230), a plurality of column lines (250), and a plurality of electron emissive elements (40) disposed at intersections of the plurality of row lines (230) and column lines (250), a column driver circuit (740) and a row driver circuit (720). The column driver circuit (740) is coupled to drive column voltage signals over the plurality of column lines (250); and the row driver circuit (720) is coupled to activate and deactivate the plurality of row lines (230) with row voltage signals. According to the present invention, operation life of the field emission display is extended when the electron emissive elements are intermittently reverse-biased by the column voltage signals and the row voltage signals. In another embodiment, the row driver circuit is responsive to a SLEEP signal (770). The row driver circuit (720), upon receiving the SLEEP signal (770), drives a sleep-mode voltage over the row lines (230) to reverse-bias the electron emissive elements.
Abstract:
A method of removing contaminant particles in newly fabricated filed emission displays. Contaminant particles are removed by a conditioning process which includes the steps of: a) driving an anode (20) of a field emission display (FED) to a predetermined voltage; b) slowly increasing an emission current of the FED after the anode has reached the predetermined voltage; and c) providing an ion-trapping device for catching the ions and particles knocked off, or otherwise released, by emitted electrons (40). By driving the anode to the predetermined voltage and by slowly increasing the emission current of the FED, contaminant particles are effectively removed without damaging the FED. A method of operating FEDs is also provided to prevent gate-to-emitter current during turn-on and turn-off, which comprises the steps of: a) enabling the anode display screen (20); and b) enabling the electron-emitters (40) after the anode display screen is enabled. By allowing sufficient time for the anode display screen to reach a predetermined voltage before the emitter is enabled, the emitted electrons (40) will be attracted to the anode (20).
Title translation:STRUKTUR UND HERSTELLUNG EINER ELEKTRONENEMITTIERENDEN VORRICHTUNG MIT ELEKTRODE,MIT ZUR ERLEICHTERUNG VON KURZSCHLUSSPREPARATURVERSEHENÖFFNUNGEN
Abstract:
An electrode (12 or 30) of an electron-emitting device has a plurality of openings (16 or 60) spaced laterally apart from one another. The openings can be used, as needed, in selectively separating one or more parts of the electrode from the remainder of the electrode during corrective test directed towards repairing any short-circuit defects that may exist between the electrode and other overlying or underlying electrodes. When the electrode with the openings is an emitter electrode (12), each opening (16) normally extends fully across an overlying control electrode (30). When the electrode with the openings is a control electrode (30), each opening (60) normally extends fully across an underlying emitter electrode (12). The short-circuit repair procedure typically entails directing light energy on appropriate portions of the electrode with the openings.
Abstract:
A voltage-adjustment section (20) of an electronic device converts an input control voltage (VI) into an output control voltage (VO) in such a way that a collector current (ICP) form with electrons emitted from an emitter (EP) of an emission/collection cell (26), or triode, varies in a desired, typically linear, manner with the input control voltage. The triode further includes a collector (CP) that carries the collector current and a gate electrode (GP) that regulates the collector current as a function of the output control voltage. Control of the collector current so as to achieve the desired current/voltage relationship is achieved with an analog control loop containing the triode and an amplifier (28) coupled between the triode's collector and gate electrode. The triode thus typically has a linear gamma characteristic relative to the input control voltage. The voltage-adjustment section is suitable for use in a display device such as a flat-panel display.
Abstract:
A multi-level matrix structure for frictionally retaining a support structure within a flat panel display device. In one embodiment, the present invention is comprised of a multi-level matrix structure. The multi-level matrix structure of the present embodiment is comprised of a first multi-layered structure disposed on an inner surface of a faceplate of a flat paneldisplay device. The multi-level matrix structure of the present embodiment is further comprised of a plurality of substantially parallel spaced apart ridges. In this embodiment, the plurality of substantially parallel spaced apart ridges overlie the first multi-layered structure. Additionally,in this embodiment, the plurality of substantially parallel spaced apart ridges include contact portions for frictionally retaining a support structure in a first direction at a desired location within the flat panel display device.
Abstract:
Material of a given chemical type is selectively electrochemically removed from a structure by subjecting portions of the structure to an electrolytic bath (62). The characteristics of certain parts of the structure are chosen to have electrochemical reduction half-cell potentials that enable removal of the undesired material to be achieved in the bath without applying external potential to any part of the structure. The electrolytic bath (62) can be implemented with liquid that is inherently corrosive to, or inherently benign to, material of the chemical type being selectively removed.
Abstract:
Multiple procedures are presented for removing contaminant material (12) from electron-emissive elements (10) of an electron-emitting device (30). One procedure involves converting the contaminant material into gaseous products (14), typically by operating the electron-emissive elements, that move away from the electron-emissive elements. Another procedure entails converting the contaminant material into further material (16) and removing the further material. An additional procedure involves forming surface coatings (18 or 20) over the electron-emissive elements. The contaminant material is then removed directly from the surface coatings or by removing at least part of each surface coating.
Abstract:
An impedance-assisted electrochemical procedure is employed for selectively removing certain material from a structure without significantly electrochemically attacking, and thus without significantly removing, certain other material of the same chemical type as the removed material.
Abstract:
A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material forms a gate layer (28A or 48A) through which gate openings (30 or 50) extend at the locations of the removed particles. When the gate material deposition is performed so that part of the gate material extends into the spaces below the particles, the gate openings are beveled. The insulating layer is etched through the gate openings to form dielectric openings (32 or 52). Electron-emissive elements (36A or 56A) are formed in the dielectric openings. This typically involves introducing emitter material through the gate openings into the dielectric openings and using a lift-off layer (34), or an electrochemical technique, to remove excess emitter material.