公开(公告)号：US20090114910A1

公开(公告)日：2009-05-07

申请号：US12063430

申请日：2006-08-24

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L27/1296 ,  H01L29/78603

Abstract: In the present invention, a thin film transistor is formed on a plastic film substrate (1) having anisotropy of thermal shrinkage rate or coefficient of thermal expansion in in-plane directions of the substrate. A channel is formed such thatthe direction (7) in which the thermal shrinkage rate or the coefficient of thermal expansion of the substrate is largest is nonparallel tothe direction (8) of a current flowing through the channel of the thin film transistor. Then, a thin film transistor having stable and uniform electrical characteristics, which is formed on the plastic film substrate, is provided.

Abstract translation: 在本发明中，在具有基板的面内方向的热收缩率或热膨胀系数的各向异性的塑料薄膜基板（1）上形成薄膜晶体管。 形成通道，使得其中热收缩率或基板的热膨胀系数最大的方向（7）不与流过薄膜晶体管的沟道的电流的方向（8）平行。 然后，提供形成在塑料薄膜基板上的具有稳定均匀电特性的薄膜晶体管。

公开(公告)号：US20080038929A1

公开(公告)日：2008-02-14

申请号：US11775561

申请日：2007-07-10

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L21/311

CPC classification number: H01L31/1884 ,  H01L31/022466 ,  H01L31/022483 ,  Y02E10/50

Abstract: Provided is a dry etching method for an oxide semiconductor film containing at least In, Ga, and Zn, which includes etching an oxide semiconductor film in a gas atmosphere containing a halogen-based gas.

Abstract translation: 提供了至少包含In，Ga和Zn的氧化物半导体膜的干式蚀刻方法，其包括在含有卤素系气体的气体气氛中蚀刻氧化物半导体膜。

公开(公告)号：US08760031B2

公开(公告)日：2014-06-24

申请号：US12615070

申请日：2009-11-09

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: B06B1/02 ,  H04R19/00 ,  H04R31/00 ,  H02N11/00

CPC classification number: B81C1/00158 ,  B06B1/0292 ,  B81B2201/0285 ,  H04R19/005 ,  H04R31/00 ,  H04R2201/003 ,  Y10T29/49005 ,  Y10T29/49007

Abstract: An electromechanical transducer of the present invention includes a first electrode, a vibrating membrane formed above the first electrode through a gap, a second electrode formed on the vibrating membrane, and an insulating protective layer formed on a surface of the second electrode side. A region where the protective layer is not formed is present on at least part of a surface of the vibrating membrane.

Abstract translation: 本发明的机电换能器包括第一电极，通过间隙形成在第一电极上方的振动膜，形成在振动膜上的第二电极和形成在第二电极侧的表面上的绝缘保护层。 在振动膜的表面的至少一部分上存在未形成保护层的区域。

公开(公告)号：US08531527B2

公开(公告)日：2013-09-10

申请号：US12595035

申请日：2008-08-25

Applicant: Chienliu Chang ,  Kenichi Nagae

Inventor： Chienliu Chang ,  Kenichi Nagae

IPC: G01S15/89 ,  G01H1/00 ,  G01H9/00 ,  G01P1/07 ,  G01D5/32 ,  G01N9/18 ,  G01N21/41 ,  G01N29/04 ,  G01B9/02

CPC classification number: G01H9/006

Abstract: An acoustic-wave sensor (10) is constructed by a membrane (11) adapted to be displaced by an acoustic wave, a first waveguide (16a) for transmitting light therein, an optical coupling part (15) to which the light transmitted through the first waveguide (16a) is adapted to be optically coupled, and a second waveguide (16b) through which the light coupled from the optical coupling part (15) transmits. When the membrane (11) is displaced by its reception of the acoustic wave, at least one of an optical coupling coefficient between the first waveguide (16a) and the optical resonator (15) and an optical coupling coefficient between the second waveguide (16b) and the optical resonator (15) is changed to output a corresponding optical signal.

Abstract translation: 声波传感器（10）由适于被声波移位的膜（11）构成，用于在其中透射光的第一波导（16a），光耦合部分（15），光 第一波导（16a）适于光学耦合，以及第二波导（16b），光耦合部分（15）耦合的光透过该第二波导（16b）。 当膜（11）通过其声波的接收位移时，第一波导（16a）和光学谐振器（15）之间的光学耦合系数和第二波导（16b）之间的光学耦合系数中的至少一个， 并且光谐振器（15）被改变以输出相应的光信号。

公开(公告)号：US08466522B2

公开(公告)日：2013-06-18

申请号：US12993536

申请日：2009-06-29

Applicant: Takahiro Ezaki ,  Chienliu Chang ,  Yasuhiro Soeda ,  Kenji Tamamori

Inventor： Takahiro Ezaki ,  Chienliu Chang ,  Yasuhiro Soeda ,  Kenji Tamamori

IPC: H01L29/84 ,  H01L21/00

CPC classification number: H01L23/5226 ,  B06B1/0292 ,  B81B2201/0257 ,  H01L21/76898 ,  H01L27/1203 ,  H01L29/84 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An element array comprises a plurality of elements having a first electrode and a second electrode with a gap therebetween; the first electrode is separated for each of the elements by grooves, an insulating connection substrate is bonded to the first electrode, and wirings are provided from the respective first electrodes through the connection substrate to the side opposite to the first electrodes.

Abstract translation: 元件阵列包括具有第一电极和第二电极的多个元件，其间具有间隙; 通过沟槽将每个元件分离第一电极，将绝缘连接基板接合到第一电极，并且通过连接基板从相应的第一电极到与第一电极相对的一侧提供布线。

公开(公告)号：US08426235B2

公开(公告)日：2013-04-23

申请号：US13319970

申请日：2010-05-13

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L21/02

CPC classification number: B06B1/0292 ,  B81B2201/0271 ,  B81B2203/0127 ,  B81C1/00476 ,  B81C2201/0139

Abstract: A capacitive electromechanical transducer includes a substrate, a cavity formed by a vibrating membrane held above the substrate with a certain distance between the vibrating membrane and the substrate by supporting portions arranged on the substrate, a first electrode whose surface is exposed to the cavity, and a second electrode whose surface facing the cavity is covered with an insulating film, wherein the first electrode is provided on a surface of the substrate or a lower surface of the vibrating membrane and the second electrode is provided on a surface of the vibrating membrane or a surface of the substrate so as to face the first electrode. In this transducer, fine particles composed of an oxide film of a substance constituting the first electrode are arranged on the surface of the first electrode, and the diameter of the fine particles is 2 to 200 nm.

Abstract translation: 一种电容式机电换能器，包括基板，由振动膜形成的空腔，该振动膜通过支撑布置在基板上的部分而在振动膜和基板之间具有一定距离而保持在基板上方，其表面暴露于空腔中的第一电极， 面向空腔的表面的第二电极被绝缘膜覆盖，其中第一电极设置在基板的表面或振动膜的下表面上，第二电极设置在振动膜的表面上或 基板的表面以面对第一电极。 在该换能器中，由构成第一电极的物质的氧化物膜构成的微粒子配置在第一电极的表面上，微粒的直径为2〜200nm。

公开(公告)号：US08339014B2

公开(公告)日：2012-12-25

申请号：US12599688

申请日：2008-06-30

Applicant: Atsushi Kandori ,  Chienliu Chang ,  Makoto Takagi

Inventor： Atsushi Kandori ,  Chienliu Chang ,  Makoto Takagi

IPC: G02B26/08

CPC classification number: B81B3/0086 ,  B81B2201/0242 ,  B81B2201/033 ,  B81B2203/058 ,  G01C19/5719

Abstract: An oscillator device that includes a movable body oscillatably supported about a rotation axis, wherein the movable body is separated into plural electrically separated conductive regions in the thickness direction, and at least one of the plural electrically separated conductive regions in the thickness direction further has plural electrically separated conductive regions.

Abstract translation: 一种振荡器装置，包括围绕旋转轴可摆动地支撑的可移动体，其中所述可移动体在所述厚度方向上被分离为多个分离的导电区域，并且所述多个电分离的导电区域中的至少一个在所述厚度方向上还具有多个 电分离的导电区域。

公开(公告)号：US08168544B2

公开(公告)日：2012-05-01

申请号：US12305099

申请日：2007-07-18

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: H01L21/302

CPC classification number: H01L31/1804 ,  C09K13/04 ,  C09K13/06 ,  H01L29/78693 ,  H01L31/022475 ,  H01L31/022483 ,  Y02E10/547 ,  Y02P70/521

Abstract: There is provided an etching method of an amorphous oxide layer containing In and at least one of Ga and Zn, which includes etching the amorphous oxide layer using an etchant containing any one of acetic acid, citric acid, hydrochloric acid, and perchloric acid.

Abstract translation: 提供了包含In和Ga和Zn中的至少一种的无定形氧化物层的蚀刻方法，其包括使用含有任何一种乙酸，柠檬酸，盐酸和高氯酸的蚀刻剂来蚀刻无定形氧化物层。

公开(公告)号：US08034248B2

公开(公告)日：2011-10-11

申请号：US11802276

申请日：2007-05-22

Applicant: Chienliu Chang

Inventor： Chienliu Chang

IPC: C23F1/00 ,  H01L21/461

CPC classification number: H01L21/465 ,  H01L29/66969 ,  H01L29/7869 ,  H01L31/1884 ,  Y02E10/50

Abstract: Provided is a dry etching method for an oxide semiconductor film made of In—Ga—Zn—O, in which an etching gas containing a hydrocarbon is used in a dry etching process for the oxide semiconductor film made of In—Ga—Zn—O formed on a substrate.

Abstract translation: 提供了一种由In-Ga-Zn-O制成的氧化物半导体膜的干蚀刻方法，其中在由In-Ga-Zn-O制成的氧化物半导体膜的干法蚀刻工艺中使用含有烃的蚀刻气体 形成在基板上。

公开(公告)号：US20110187868A1

公开(公告)日：2011-08-04

申请号：US12595035

申请日：2008-08-25

Applicant: Chienliu Chang ,  Kenichi Nagae

Inventor： Chienliu Chang ,  Kenichi Nagae

IPC: G01S15/89 ,  G01H9/00

CPC classification number: G01H9/006

Abstract: An acoustic-wave sensor (10) is constructed by a membrane (11) adapted to be displaced by an acoustic wave, a first waveguide (16a) for transmitting light therein, an optical coupling part (15) to which the light transmitted through the first waveguide (16a) is adapted to be optically coupled, and a second waveguide (16b) through which the light coupled from the optical coupling part (15) transmits. When the membrane (11) is displaced by its reception of the acoustic wave, at least one of an optical coupling coefficient between the first waveguide (16a) and the optical resonator (15) and an optical coupling coefficient between the second waveguide (16b) and the optical resonator (15) is changed to output a corresponding optical signal.

Abstract translation: 声波传感器（10）由适于被声波移位的膜（11）构成，用于在其中透射光的第一波导（16a），光耦合部分（15），光 第一波导（16a）适于光学耦合，以及第二波导（16b），光耦合部分（15）耦合的光透过该第二波导（16b）。 当膜（11）通过其声波的接收位移时，第一波导（16a）和光学谐振器（15）之间的光学耦合系数和第二波导（16b）之间的光学耦合系数中的至少一个， 并且光谐振器（15）被改变以输出相应的光信号。