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公开(公告)号：US20150084086A1
公开(公告)日：2015-03-26
申请号：US14553513
申请日：2014-11-25
Applicant: EPISTAR CORPORATION
Inventor： Chia-Liang Hsu , Han-Min Wu , Yen-Ming Hsu , Chien-Fu Huang , Tzu-Chieh Hsu , Min-Hsun Hseih
CPC classification number: H01L33/56 , G02B6/0025 , G02B6/0031 , G02B6/0073 , H01L33/48 , H01L33/486 , H01L33/50 , H01L33/507 , H01L33/54 , H01L33/60 , H01L2224/48091 , H01L2924/00014
Abstract: An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface, and the first surface and the surface of the circuit carrier includes an included angle larger than zero; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; and a second transparent glue formed on the second surface corresponding to the first transparent glue; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection.
Abstract translation: 公开了封装的发光二极管装置。 封装的发光二极管装置包括：包括表面的电路载体; 包括透明基板的发光装置，所述透明基板包括第一表面和第二表面，并且所述电路载体的所述第一表面和所述表面包括大于零的夹角; 位于透明基板的第一表面上的发光二极管芯片; 以及覆盖所述发光二极管芯片并形成在所述第一表面上的第一透明胶; 以及形成在与所述第一透明胶相对应的所述第二表面上的第二透明胶; 其中所述第一透明胶在所述第一表面上具有圆形突起，并且所述发光二极管芯片基本上位于所述圆形突起的中心。
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公开(公告)号：US08852974B2
公开(公告)日：2014-10-07
申请号：US13707168
申请日：2012-12-06
Applicant: Epistar Corporation
Inventor： Chien-Fu Huang , Yi-Ming Chen , Yi-Tang Lai , Chia-Liang Hsu , Tsung-Hsien Yang , Tzu-Chieh Hsu
CPC classification number: H01L33/22 , H01L33/007 , H01L2924/0002 , H01L2924/00
Abstract: A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.
Abstract translation: 一种制造半导体发光器件的方法，包括以下步骤：提供包括表面的多层半导体膜; 使多层半导体膜的表面粗糙化，形成散射面; 在散射表面上重新生长半导体层; 并使所述半导体层变粗糙以在所述散射面上形成副散射部; 其中所述副散射部分在结构上小于所述散射表面。
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公开(公告)号：US20140014994A1
公开(公告)日：2014-01-16
申请号：US13932661
申请日：2013-07-01
Applicant: Epistar Corporation
Inventor： Shih-I Chen , CHIA-LIANG HSU , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang , Ching-Pei Lin
IPC: H01L33/46
Abstract: An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.
Abstract translation: 一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。
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公开(公告)号：US10756960B2
公开(公告)日：2020-08-25
申请号：US16258250
申请日：2019-01-25
Applicant: EPISTAR CORPORATION
Inventor： Chih-Chiang Lu , Yi-Chieh Lin , Wen-Luh Liao , Shou-Lung Chen , Chien-Fu Huang
IPC: H01L33/00 , H01L33/62 , H01L27/15 , H04L12/24 , H01L33/10 , H01L33/08 , H01L33/50 , H01L33/56 , H04L12/803
Abstract: A light-emitting device comprises a first light-emitting semiconductor stack comprising a first active layer; a second light-emitting semiconductor stack below the first light-emitting semiconductor stack, wherein the second light-emitting semiconductor stack comprises a second active layer; a reflector between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack; a protecting layer between the reflector and the second light-emitting semiconductor stack; and wherein the first light-emitting semiconductor stack further comprises a first semiconductor layer and a second semiconductor layer sandwiching the first active layer, the second light-emitting semiconductor stack further comprises a third semiconductor layer and a fourth semiconductor layer sandwiching the second active layer, wherein the second semiconductor layer has a first band gap, the third semiconductor layer has a second band gap, and the protecting layer has a third band gap between the first band gap and the second band gap.
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公开(公告)号：US10319877B2
公开(公告)日：2019-06-11
申请号：US15944459
申请日：2018-04-03
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Chih-Chiang Lu , Chun-Yu Lin , Hsin-Chih Chiu
Abstract: The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.
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Patent Agency Ranking
公开(公告)号：US10062730B2
公开(公告)日：2018-08-28
申请号：US15196717
申请日：2016-06-29
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Shen , Chao-Hsing Chen , Tsun-Kai Ko , Schang-Jing Hon , Sheng-Jie Hsu , De-Shan Kuo , Hsin-Ying Wang , Chiu-Lin Yao , Chien-Fu Huang , Hsin-Mao Liu , Chien-Kai Chung
CPC classification number: H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, comprising a first part formed on the first light-emitting unit or the second light-emitting unit, and a second part conformably formed on the trench covering the bottom portion and sidewalls of the first light-emitting unit and the second light-emitting unit; and an electrical connection, electrically connecting the first light-emitting unit and the second light-emitting unit, comprising a bridging portion formed on the second part of the insulating layer, and only covering a portion of the trench; and a joining portion, extending from the bridging portion and formed on the first part of the insulating layer; wherein the bridging portion is wider than the joining portion in a top view.
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公开(公告)号：US20180226537A1
公开(公告)日：2018-08-09
申请号：US15944459
申请日：2018-04-03
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Chih-Chiang Lu , Chun-Yu Lin , Hsin-Chih Chiu
CPC classification number: H01L33/02 , H01L22/12 , H01L22/14 , H01L24/24 , H01L25/0753 , H01L33/36 , H01L33/62 , H01L2924/0002 , H01L2933/0033 , H01L2933/0066
Abstract: The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.
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公开(公告)号：US09997687B2
公开(公告)日：2018-06-12
申请号：US15401710
申请日：2017-01-09
Applicant: EPISTAR CORPORATION
Inventor： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/38 , H01L33/46 , H01L33/60 , H01L33/62 , H01L27/15 , H01L33/42 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L25/075 , H01L33/32 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device comprising: a supportive substrate; a transparent layer formed on the supportive substrate, and the transparent layer comprising conductive metal oxide material; a light-emitting stacked layer comprising an active layer formed on the transparent layer; and an etching-stop layer formed between the light-emitting stacked layer and the supportive substrate and contacting the transparent layer, wherein a thickness of the etching-stop layer is thicker than that of the transparent layer.
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公开(公告)号：US09954140B2
公开(公告)日：2018-04-24
申请号：US15596644
申请日：2017-05-16
Applicant: EPISTAR CORPORATION
Inventor： Chien-Fu Huang , Shiuan-Leh Lin , Chih-Chiang Lu , Chia-Liang Hsu
CPC classification number: H01L33/12 , H01L33/0079 , H01L33/02 , H01L33/10 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/46 , H01L33/58 , H01L2933/0033 , H01L2933/0058 , H01L2933/0091
Abstract: The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 Å.
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公开(公告)号：US09577170B2
公开(公告)日：2017-02-21
申请号：US14663544
申请日：2015-03-20
Applicant: Epistar Corporation
Inventor： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chung
IPC: H01L33/62 , H01L27/15 , H01L33/42 , H01L33/46 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/44 , H01L33/48 , H01L33/32 , H01L33/38 , H01L33/40
CPC classification number: H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: A light-emitting device is disclosed. The light-emitting device comprises a supportive substrate; a first light-emitting element and a second light-emitting element on the supportive substrate, wherein the first light-emitting element comprises a transparent layer on the supportive substrate, a first light-emitting stacked layer on the transparent layer, and a plurality of contact parts between the transparent layer and the first light-emitting stacked layer; and the second light-emitting element comprises an electrode and a second light-emitting stacked layer between the electrode and the supportive substrate; and a metal line on the supportive substrate and electrically connecting the electrode and one of the contact parts.
Abstract translation: 公开了一种发光器件。 发光装置包括支撑基板; 第一发光元件和第二发光元件，其中所述第一发光元件包括在所述支撑基板上的透明层，所述透明层上的第一发光层叠层，以及多个 透明层与第一发光层叠层之间的接触部分; 并且所述第二发光元件包括在所述电极和所述支撑衬底之间的电极和第二发光层叠层; 以及在所述支撑基板上的金属线，并且电连接所述电极和所述接触部分之一。
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