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    HOLLOW CATHODE ENHANCED PLASMA FOR HIGH RATE REACTIVE ION ETCHING AND DEPOSITION
    31.
    发明专利
    HOLLOW CATHODE ENHANCED PLASMA FOR HIGH RATE REACTIVE ION ETCHING AND DEPOSITION 未知

    公开(公告)号：CA1283381C

    公开(公告)日：1991-04-23

    申请号：CA509327

    申请日：1986-05-16

    Applicant: IBM

    Inventor： BUMBLE BRUCE ,  CUOMO JEROME J ,  LOGAN JOSEPH S ,  ROSSNAGEL STEVEN M

    IPC: H05K3/08 ,  C23C14/34 ,  C23F1/04 ,  C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  B44C1/22 ,  C03C15/00 ,  C03C25/06 ,  C23F1/02

    Abstract: HOLLOW CATHODE ENHANCED PLASMA FOR HIGH RATE REACTIVE ION ETCHING AND DEPOSITION A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4. According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.

    PHOTON ENERGY CONVERTER
    33.
    发明专利
    PHOTON ENERGY CONVERTER 未知

    公开(公告)号：CA1052212A

    公开(公告)日：1979-04-10

    申请号：CA233465

    申请日：1975-08-14

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  WOODALL JERRY M ,  ZIEGLER JAMES F

    IPC: F24J2/48 ,  F24S10/75 ,  G02B5/00 ,  F24J3/02

    Abstract: PHOTON ENERGY CONVERTER An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.

    36.
    发明专利
    未知

    公开(公告)号：DE69329663T2

    公开(公告)日：2001-05-03

    申请号：DE69329663

    申请日：1993-02-01

    Applicant: IBM

    Inventor： JOSHI RAJIV V ,  CUOMO JEROME J ,  DALAL HORMAZDYAR M ,  HSU LOUIS L

    IPC: H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L23/485 ,  H01L21/60

    Abstract: Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH 4 to WF 6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metallizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

    39.
    发明专利
    未知

    公开(公告)号：DE69403816T2

    公开(公告)日：1998-01-15

    申请号：DE69403816

    申请日：1994-01-05

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  GUARNIERI C RICHARD ,  HOPWOOD JEFFREY A

    IPC: C23C14/00 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

    Abstract: A shield (124) for shunting capacitive electric fields generated by an RF coil (116) away from a gas plasma process chamber's dielectric window (122) and toward ground. The shield comprises an electrically conducting, substantially planar body section having a periphery and adapted to be located between the RF coil and the dielectric window during plasma treating of a workpiece. A central opening in the body section and gaps about the periphery permit RF magnetic fields to inductively couple with the plasma (110) and return around the coil, respectively. The shield substantially reduces interference by capacitive electric fields generated by the coil with inductive coupling between the coil and the gas plasma, thus substantially eliminating contamination from sputtering of the dielectric window by the capacitive electric fields.

    40.
    发明专利
    未知

    公开(公告)号：DE69403816D1

    公开(公告)日：1997-07-24

    申请号：DE69403816

    申请日：1994-01-05

    Applicant: IBM

    Inventor： CUOMO JEROME J ,  GUARNIERI C RICHARD ,  HOPWOOD JEFFREY A

    IPC: C23C14/00 ,  C23C16/50 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H05H1/46

    Abstract: A shield (124) for shunting capacitive electric fields generated by an RF coil (116) away from a gas plasma process chamber's dielectric window (122) and toward ground. The shield comprises an electrically conducting, substantially planar body section having a periphery and adapted to be located between the RF coil and the dielectric window during plasma treating of a workpiece. A central opening in the body section and gaps about the periphery permit RF magnetic fields to inductively couple with the plasma (110) and return around the coil, respectively. The shield substantially reduces interference by capacitive electric fields generated by the coil with inductive coupling between the coil and the gas plasma, thus substantially eliminating contamination from sputtering of the dielectric window by the capacitive electric fields.

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