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公开(公告)号:AU8575775A
公开(公告)日:1977-04-21
申请号:AU8575775
申请日:1975-10-15
Applicant: IBM
Inventor: CUOMO JEROME JOHN , WOODALL JERRY MACPHERSON , ZIEGLER JAMES FRANCIS
Abstract: An efficient converter of photon energy to heat has been devised comprising a dense array of metal whiskers grown with spacings between the whiskers of a few wavelengths of visible light. The material selected, and tungsten is exemplary of such materials, has low emissivity, but achieves significant optical absorption by trapping the light impinging on the dense array by a geometric maze effect. The characteristics of the surface are excellent for the conversion of solar energy to heat.
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公开(公告)号:AU5879673A
公开(公告)日:1975-02-06
申请号:AU5879673
申请日:1973-08-01
Applicant: IBM
Inventor: GAMBINO RICHARD JOSEPH , CUOMO JEROME JOHN , CHAUDHARI PRAVEEN
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公开(公告)号:DE19515347C2
公开(公告)日:1997-04-17
申请号:DE19515347
申请日:1995-04-26
Applicant: IBM
Inventor: CUOMO JEROME JOHN , GAMBINO RICHARD JOSEPH , GRILL ALFRED , KANE WILLIAM FRANCIS , MIKALSEN DONALD JOSEPH
IPC: H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01G4/008 , H01G4/12
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公开(公告)号:DE69302029D1
公开(公告)日:1996-05-09
申请号:DE69302029
申请日:1993-01-21
Applicant: IBM
Inventor: CUOMO JEROME JOHN , GUARNIERI CHARLES RICHARD , HOPWOOD JEFFREY ALAN , WHITEHAIR STANLEY JOSEPH
IPC: H01L21/205 , C23F4/00 , H01J37/32 , H01L21/027 , H01L21/30 , H01L21/302 , H01L21/3065 , H01L21/31
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36.
公开(公告)号:DE19515347A1
公开(公告)日:1995-11-02
申请号:DE19515347
申请日:1995-04-26
Applicant: IBM
Inventor: CUOMO JEROME JOHN , GAMBINO RICHARD JOSEPH , GRILL ALFRED , KANE WILLIAM FRANCIS , MIKALSEN DONALD JOSEPH
IPC: H01L27/04 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01G4/008 , H01G4/12
Abstract: The electrode structure (10) includes a substrate (26) with a free surface semiconductor layer (27), metal (31) and metal oxide (32) layers. The metal layer is formed from a chosen one of the group Ru, Ir, Re, Rh, Os, Pd. The metal oxide layer is chosen from the same metallic group as the initial metal. A further metallic layer (33) over the oxide layer is formed of metal from the same group. The semiconductor layer is of Silicon or Germanium. Included above the metal and metal oxide layers is a further layer having a high dielectric constant (16). The dielectric material is an oxide of ferroelectric or para-electric material such as BaxSr(1-x)TiO3 or PbZr3Ti(1-x)O3 and a fifth layer of conducting material.
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公开(公告)号:DE3772845D1
公开(公告)日:1991-10-17
申请号:DE3772845
申请日:1987-05-08
Applicant: IBM
Inventor: CUOMO JEROME JOHN , DIBBLE ERIC PAUL , LEVINE SOLOMON LEON
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公开(公告)号:DE3674501D1
公开(公告)日:1990-10-31
申请号:DE3674501
申请日:1986-07-28
Applicant: IBM
Inventor: BUMBLE BRUCE , CUOMO JEROME JOHN , LOGAN JOSEPH SKINNER , ROSSNAGEL STEVEN MARK
IPC: H05K3/08 , C23C14/34 , C23F1/04 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065
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公开(公告)号:DE3673749D1
公开(公告)日:1990-10-04
申请号:DE3673749
申请日:1986-09-19
Applicant: IBM
Inventor: CUOMO JEROME JOHN , GUARNIERI CHARLES RICHARD
IPC: B01J19/08 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/302 , H01L21/31 , H05H1/22
Abstract: Plasma enhancement is achieved in a plasma glow system (1) by increasing the number of photoelectric electrons (15) in the plasma glow (11) by producing photoelectrons from the surface of a target (3) in the system by the use of a radiation source (8). This is more particularly accomplished by flooding the surface of the target with a UV laser beam during the plasma process where emitted photoelectrons are injected into the plasma to increase the plasma density.The plasma enhancement is used in a sputter etching/deposition system which includes a chamber containing a cathode (2), a target, a substrate platform (5) containing substrate and a pump. An ultraviolet light source such as a UV laser and focussing optics (9) for focussing the UV radiation onto the target through a UV transmissive window (10) are also provided. A plasma region in the chamber is enhanced by photons from the laser striking the target and producing photoelectrons which are injected into the plasma to increase its density.
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公开(公告)号:DE3380580D1
公开(公告)日:1989-10-19
申请号:DE3380580
申请日:1983-05-23
Applicant: IBM , KAUFMAN HAROLD RICHARD
Inventor: KAUFMAN HAROLD RICHARD , CUOMO JEROME JOHN , HARPER JAMES KCKELL EDWIN
IPC: H01J37/22 , C23C14/46 , C23F1/00 , C23F4/00 , H01J27/02 , H01J27/08 , H01J27/14 , H01J37/08 , H01L21/265
Abstract: A compact ion source plug (43) connected to a socket (40) is provided. The source uses a magnetic pole piece which includes a center pole piece (50) and a surrounding circumferential pole piece (45) to form an arcuate fringe field. Cathode elements (47) and anode elements (48,49) are located within the fringe field for producing a plasma. A source body (52) terminates at one end with at least one grid (56, 57) and forms a plasma chamber with a base member (43). All of the electrical connections to the plasma generator and the gas connection are through a plug formed on the opposite side of the base member (43).
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