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公开(公告)号：SG54481A1
公开(公告)日：1998-11-16
申请号：SG1997000898
申请日：1997-03-22
Applicant: IBM
Abstract: The invention relates to a special type of magnetic tag that serves both as an identifier of the article to which it is attached and as an antitheft device. The former attribute is especially important should stolen property be recovered. Identification comes about through the use of an array of individual magnetic elements that are closely spaced, preferably along and perpendicular to an amorphous wire or strip. The magnetic elements can take the form of magnetic ink, high coercivity wire, thin foil, or amorphous wire. The array may be personalized (coded) by leaving out elements of the array or driving selected elements to saturation while others remain demagnetized. The elements can also be in the form of a double array to constitute '1's and '0's to form a code. Reading of the elements is accomplished with a special reading head consisting or one or more small magnetic circuits coupled to one or more pickup loops. A longer length of soft magnetic wire or thin strip is used to trigger an anti-theft alarm when activated by an external field from a magnetic gate.
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公开(公告)号：DE69030074T2
公开(公告)日：1997-09-18
申请号：DE69030074
申请日：1990-12-13
Applicant: IBM
Inventor： CHAUDHARI PRAVEEN , GAMBINO RICHARD JOSEPH , KOCH ROGER HILSEN , LAIBOWITZ ROBERT BENJAMIN , GANIN ETI , SAI-HALASZ GEORGE ANTHONY , KRUSIN-ELBAUM LIA , SUN YUAN-CHEN , WORDEMAN MATTHEW ROBERT
IPC: H01L27/092 , H01L21/8238 , H01L29/43 , H01L29/49 , H01L29/78 , H01L39/02 , H01L39/22 , H01L39/24
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公开(公告)号：DE3855305T2
公开(公告)日：1996-12-05
申请号：DE3855305
申请日：1988-03-04
Applicant: IBM
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Patent Agency Ranking
公开(公告)号：AU606673B2
公开(公告)日：1991-02-14
申请号：AU1452988
申请日：1988-04-12
Applicant: IBM
Inventor： CLARK GREGORY JOHN , GAMBINO RICHARD JOSEPH , KOCH ROGER HILSEN , LAIBOWITZ ROBERT BENJAMIN , MARWICK ALAN DAVID , UMBACH CORWIN PAUL
IPC: G01R33/035 , H01L39/22 , H01L39/24
Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.
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公开(公告)号：AU1452988A
公开(公告)日：1988-10-13
申请号：AU1452988
申请日：1988-04-12
Applicant: IBM
Inventor： CLARK GREGORY JOHN , UMBACH CORWIN PAUL , GAMBINO RICHARD JOSEPH , KOCH ROGER HILSEN , LAIBOWITZ ROBERT BENJAMIN , MARWICK ALAN DAVID
IPC: G01R33/035 , H01L39/22 , H01L39/24 , H01L39/12
Abstract: A superconducting device operable at temperatures in excess of 30oK and a method for making the device are described. A representative device is an essentially coplanar SQUID device (10, 56A, 56B, 58A, 58B) formed in a single layer (12) of high-Tc superconducting material, the SQUID device (10, 56A, 56B, 58A, 58B) being operable at temperatures in excess of 60 K. High energy beams (34), for example ion beams, are used to convert selected portions (30) of the high-Tc superconductor layer (12) to nonsuperconducting properties so that the material now has both, superconducting regions (20A, 20B) and nonsuperconducting regions (30). In this manner a superconducting loop (16A, 16B, 20A, 20B) having superconducting weak links (16A, 16B) can be formed to comprise the SQUID device.
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公开(公告)号：DE3266104D1
公开(公告)日：1985-10-17
申请号：DE3266104
申请日：1982-03-09
Applicant: IBM
Inventor： GAMBINO RICHARD JOSEPH , RUF RALPH RICHARD
Abstract: A hollow cylindrical permanent magnet 43 has an axial stainless steel core 38 surrounded by a coil 50. The core interior contains LaCO5 particles, to which hydrogen gas can be supplied from tube 81, the gas exhausting via tube 82. The core also has a coolant pipe 39. The lanthanum cobalt is rapidly reversibly cycled through a hydride phase by controlling the hydrogen supply to and from the core interior, possibly also with cyclic temperature control, so that its magnetic reluctance is varied which causes an alternating emf to arise in the coil 50.
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公开(公告)号：DE2845074A1
公开(公告)日：1979-05-10
申请号：DE2845074
申请日：1978-10-17
Applicant: IBM
Inventor： CUOMO JEROME JOHN , GAMBINO RICHARD JOSEPH , HARPER JAMES MCKELL EDWIN
IPC: C23F4/00 , H01J37/34 , H01L21/302 , H01L21/3065 , C23C15/00
Abstract: Bombardment some intermetallic compounds above a sufficient target voltage Vo can be used for etching substrates. Etching a substrate located in an evacuated chamber involves bombardment of an intermetallic compound or alloy comprising for example Au, Pt, etc. and a metallic element such as Eu, La, Cs, etc. with ions so that a large flux of negative Au, Pt, etc. ions is produced which etches a substrate located nearby. Such bombardment is achieved by placing an Au, Pt, etc. intermetallic composition target in a sputtering chamber using an argon sputtering gas, located opposite from a substrate. A gold alloy or compound target can be SmAu, EuAu, LaAu, CsAu, etc. The target of Au, Pt, etc. and a rare earth element, etc. is bombarded by sputtering gas atoms excited by RF or D.C. energy, creating negative metal ions by sputtering. Instead of depositing upon the substrate, the negative ions cause a cascade of energetic sputtering gas atoms and metal atoms to etch the substrate surface directly beneath the target as outlined by ground shields. Outside that region negative ion and rare earth metals deposit on the substrate. Bombardment with an ion gun, neutral atoms or energetic particle sources or an ionic molecular source may produce negative ions. A use is ion milling. A target material is useful as a negative ion source of metal B in an intermetallic compound of metals A and B if A has ionization potential IA and B has electron affinity EAB such that IA-EAB > about 3.4 electron volts or if there is a electronegativity difference DELTA X greater than about 2.55.
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公开(公告)号：DE2361984A1
公开(公告)日：1974-06-27
申请号：DE2361984
申请日：1973-12-13
Applicant: IBM
Inventor： GAMBINO RICHARD JOSEPH
Abstract: A method for providing an amorphous semicondcutor material thin film on a substrate member is described. In carrying out the method, there are disposed in spaced relationship in an evacuated chamber, a surface of a body of the semiconductor material which contains the constituents of the desired thin film in substantially stoichiometric proportion, the body being substantially uniform in thickness and in composition, and a surface of the substrate member. The distance between the two surfaces is chosen to be no greater than the shortest dimension of the surface of the semiconductor body, the area of the latter surface being chosen to be at least equal to the area of the surface of the substrate member. The semiconductor material contains semiconductor components, each of which has a high enough vapor pressure at a temperature less than its melting point to meet the criterion wherein the ratio P/(MTm)1/2, wherein P is the vapor pressure in Torr, M and Tm are molecular weight and melting points (in degrees Kelvin), respectively, has a value of at least 0.855 x 10 8. The surface of the semiconductor material body is uniformly heated to a temperature close to but less than its melting point to cause the semiconductor material thereof to evaporate therefrom onto the surface of the substrate member and to deposit on the substrate member's surface as an amorphous film. In the situation wherein it is desired to deposit an amorphous semiconductor material thin film wherein the vapor pressure of one of the constituents is not sufficiently high at a temperature less than its melting point to meet the above-mentioned ratio criterion, then, in the method, those components which have a sufficiently high vapor pressure at temperatures below their melting points to meet the criterion are combined in the desired stoichiometric proportions in a single semiconductor material body to provide a first sublimation source and those components which do not have sufficiently high vapor pressures at temperatures below the melting point of the semiconductor material to meet the above set forth ratio criterion function as separate sublimation sources. In this situation, the surface of the semiconductor body having the sufficiently high vapor pressure components is heated to a temperature close to but less than its melting point as in the single source method, and the sublimation sources comprising the low vapor pressure semiconductor constituents are positioned close to and adjacent to the first source, the latter sources being heated whereby their deposition rates onto the substrate are at the amounts required to provide their stoichiometric proportions in the thin film deposited on the substrate.
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