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    35.
    发明专利
    未知

    公开(公告)号：DE3886754D1

    公开(公告)日：1994-02-10

    申请号：DE3886754

    申请日：1988-10-19

    Applicant: IBM DEUTSCHLAND

    Inventor： BAYER THOMAS ,  BARTHA JOHANN DR ,  GRESCHNER JOHANN DR ,  KERN DIETER ,  MATTERN VOLKER ,  STOEHR ROLAND

    IPC: C08J7/00 ,  C23F4/00 ,  H01L21/00 ,  H01L21/302 ,  H01L21/3065 ,  H01J37/20

    Abstract: The invention relates to a vacuum reactor for etching thermally poorly conducting substrates with a high etching rate uniformity, in which the substrates (33) to be etched are arranged in a holder (35, 36) at a specific distance from the cathode (31) to which RF energy is applied. In an advantageous embodiment of the invention, the cathode is raised in the region of the substrate (33) to be etched and brought up to the underside of the substrate as far as a distance of approximately 0.2 mm. The cathode consists of aluminium, and is provided in the region of the substrate to be etched with a layer (32) acting as a complete radiator. The heat formed during the RIE is dissipated by thermal radiation, and the radiation reflected back onto the substrates from the cathode is absorbed by the layer (32). The invention also comprises a process for etching thermally poorly conducting substrates, in particular for etching plastic substrates.

    36.
    发明专利
    未知

    公开(公告)号：DE3786549D1

    公开(公告)日：1993-08-19

    申请号：DE3786549

    申请日：1987-03-27

    Applicant: IBM DEUTSCHLAND

    Inventor： BARTHA JOHANN DR ,  BAYER THOMAS ,  GRESCHNER JOHANN DR ,  WITTLINGER JUERGEN

    IPC: H01L21/302 ,  B26F1/28 ,  G03F1/20 ,  G03F7/00 ,  G03F7/12 ,  G03F7/40 ,  H01L21/3065 ,  H01L21/48 ,  H05K1/00 ,  H05K1/03 ,  H05K3/00 ,  H05K3/42 ,  G03F1/00 ,  H01L21/66

    Abstract: Micromechanical components of any shape are made from plane parallel polymer panels or through holes of any shape are made in these by: (A) producing a mask by: (a) applying a 2-10 micron thick photoresist coating to both sides of a polymer substrate; (b) producing the required pattern by simultaneous selective exposure of both front and back photoresist coatings, so that the masks are aligned with an accuracy of ca. +/- 1-2 microns; and (c) developing and, if necessary, post-curing the photoresist coatings; (B) producing the components or through-holes by reactive ion etching (RIE) from the front and then the back, each to a depth up to ca. 2/3 of the substrate thickness, using an oxygen plasma with a pressure of 1-50 microbar; and (C) stripping the photoresist masks from the front and back of the substrate.

    APERTURED MASK FOR CREATING PATTERNED SURFACES AND PROCESS FOR ITS MANUFACTURE
    37.
    发明专利
    APERTURED MASK FOR CREATING PATTERNED SURFACES AND PROCESS FOR ITS MANUFACTURE 未知

    公开(公告)号：DE3065255D1

    公开(公告)日：1983-11-17

    申请号：DE3065255

    申请日：1980-05-09

    Applicant: IBM

    Inventor： BOHLEN HARALD ,  ENGELKE HELMUT DR ,  GRESCHNER JOHANN DR ,  NEHMIZ PETER DR

    IPC: H01L21/027 ,  G03F1/00 ,  G03F1/20

    Abstract: A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tubshaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.

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