公开(公告)号：US11837534B2

公开(公告)日：2023-12-05

申请号：US15859309

申请日：2017-12-29

Applicant: Intel Corporation

Inventor： Aleksandar Aleksov ,  Kristof Darmawikarta ,  Haobo Chen ,  Changhua Liu ,  Sri Ranga Sai Boyapati ,  Bai Nie

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49838 ,  H01L21/4857 ,  H01L23/49822

Abstract: Apparatuses, systems and methods associated with package substrate design with variable height conductive elements within a single layer are disclosed herein. In embodiments, a substrate may include a first layer, wherein a trench is located in the first layer, and a second layer located on a surface of the first layer. The substrate may further include a first conductive element located in a first portion of the second layer adjacent to the trench, wherein the first conductive element extends to fill the trench, and a second conductive element located in a second portion of the second layer, wherein the second conductive element is located on the surface of the first layer. Other embodiments may be described and/or claimed.

公开(公告)号：US20230197679A1

公开(公告)日：2023-06-22

申请号：US17558457

申请日：2021-12-21

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Jason M. Gamba ,  Brandon C. Marin ,  Srinivas V. Pietambaram ,  Xiaoxuan Sun ,  Omkar G. Karhade ,  Xavier Francois Brun ,  Yonggang Li ,  Suddhasattwa Nad ,  Bohan Shan ,  Haobo Chen ,  Gang Duan

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/538

CPC classification number: H01L25/0652 ,  H01L24/16 ,  H01L24/14 ,  H01L24/73 ,  H01L24/13 ,  H01L23/5383 ,  H01L2224/16227 ,  H01L2224/14177 ,  H01L2224/73204 ,  H01L2224/13111 ,  H01L2924/01079 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/01083 ,  H01L2924/01049 ,  H01L2924/01031

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

公开(公告)号：US20250112175A1

公开(公告)日：2025-04-03

申请号：US18477638

申请日：2023-09-29

Applicant: Intel Corporation

Inventor： Brandon C. Marin ,  Jesse C. Jones ,  Yosef Kornbluth ,  Mitchell Page ,  Soham Agarwal ,  Fanyi Zhu ,  Shuren Qu ,  Hanyu Song ,  Srinivas V. Pietambaram ,  Yonggang Li ,  Bai Nie ,  Nicholas Haehn ,  Astitva Tripathi ,  Mohamed R. Saber ,  Sheng Li ,  Pratyush Mishra ,  Benjamin T. Duong ,  Kari Hernandez ,  Praveen Sreeramagiri ,  Yi Li ,  Ibrahim El Khatib ,  Whitney Bryks ,  Mahdi Mohammadighaleni ,  Joshua Stacey ,  Travis Palmer ,  Gang Duan ,  Jeremy Ecton ,  Suddhasattwa Nad ,  Haobo Chen ,  Robin Shea McRee ,  Mohammad Mamunur Rahman

IPC: H01L23/00 ,  H01L23/13 ,  H01L23/15 ,  H01L25/065

Abstract: Various techniques for edge stress reduction in glass cores and related devices and methods are disclosed. In one example, a microelectronic assembly includes a glass core having a bottom surface, a top surface opposite the bottom surface, and one or more sidewalls extending between the bottom surface and the top surface, and further includes a panel of an organic material, wherein the glass core is embedded within the panel. In another example, a microelectronic assembly includes a glass core as in the first example, where an angle between a portion of an individual sidewall and one of the bottom surface or the top surface is greater than 90 degrees. In yet another example, a microelectronic assembly includes a glass core as in the first example, and further includes a pattern of a material on one of the one or more sidewalls.

公开(公告)号：US12255130B2

公开(公告)日：2025-03-18

申请号：US16884452

申请日：2020-05-27

Applicant: INTEL CORPORATION

Inventor： Hongxia Feng ,  Jeremy Ecton ,  Aleksandar Aleksov ,  Haobo Chen ,  Xiaoying Guo ,  Brandon C. Marin ,  Zhiguo Qian ,  Daryl Purcell ,  Leonel Arana ,  Matthew Tingey

IPC: H01L23/522 ,  H01L23/66

Abstract: Processes and structures resulting therefrom for the improvement of high speed signaling integrity in electronic substrates of integrated circuit packages, which is achieved with the formation of airgap structures within dielectric material(s) between adjacent conductive routes that transmit/receive electrical signals, wherein the airgap structures decrease the capacitance and/or decrease the insertion losses in the dielectric material used to form the electronic substrates.

公开(公告)号：US20250022786A1

公开(公告)日：2025-01-16

申请号：US18899851

申请日：2024-09-27

Applicant: Intel Corporation

Inventor： Jeremy Ecton ,  Hiroki Tanaka ,  Haobo Chen ,  Brandon Christian Marin ,  Srinivas Venkata Ramanuja Pietambaram ,  Gang Duan ,  Jason Gamba ,  Bohan Shan ,  Robert May ,  Benjamin Taylor Duong ,  Bai Nie ,  Whitney Bryks

IPC: H01L23/498 ,  H01L23/08

Abstract: Methods and apparatus for edge protected glass cores are disclosed herein. An example package substrate includes a first glass layer including a first surface, a second surface opposite the first surface, and first lateral surfaces extending between the first and second surfaces, the first glass layer having a first via extending between the first surface and the second surface; and a dielectric material in contact with the first surface of the first glass layer and in contact with the first lateral surfaces of the first glass layer.

公开(公告)号：US20240312865A1

公开(公告)日：2024-09-19

申请号：US18182879

申请日：2023-03-13

Applicant: Intel Corporation

Inventor： Kyle Arrington ,  Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Pietambaram ,  Gang Duan ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu

IPC: H01L23/373 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/3733 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/49866 ,  H01L23/49877 ,  H01L23/15

Abstract: Methods, systems, apparatus, and articles of manufacture to improve reliability of vias in a glass substrate of an integrated circuit package are disclosed. An example integrated circuit (IC) package substrate includes a glass substrate, a via extending between first and second surfaces of the glass substrate, and a conductive material provided in the via, the conductive material including gallium and silver.

公开(公告)号：US20240222257A1

公开(公告)日：2024-07-04

申请号：US18089801

申请日：2022-12-28

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Yiqun Bai ,  Dingying Xu ,  Bai Nie ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Rahul N. Manepalli ,  Brandon C. Marin ,  Jeremy D. Ecton

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/538

CPC classification number: H01L23/49894 ,  H01L21/481 ,  H01L21/486 ,  H01L23/49827 ,  H01L23/5384 ,  H01L23/15

Abstract: A substrate for an electronic system includes a glass core layer. The glass core layer includes a first surface and a second surface opposite the first surface; and at least one through-glass via (TGV) extending through the glass core layer from the first surface to the second surface. The TGV includes an opening filled with an electrically conductive material; and a via liner including a sidewall material disposed on a sidewall of the opening between the glass of the glass core layer and the electrically conductive material, wherein the sidewall material includes carbon.

公开(公告)号：US20240222210A1

公开(公告)日：2024-07-04

申请号：US18091548

申请日：2022-12-30

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Bai Nie ,  Srinivas Venkata Ramanuja Pietambaram ,  Gang Duan ,  Kyle Jordan Arrington ,  Ziyin Lin ,  Hongxia Feng ,  Yiqun Bai ,  Xiaoying Guo ,  Dingying Xu ,  Kristof Darmawikarta

IPC: H01L23/15 ,  H01L21/48 ,  H01L23/498

CPC classification number: H01L23/15 ,  H01L21/486 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/49838

Abstract: An integrated circuit device substrate includes a first glass layer, a second glass layer, and a dielectric interface layer between the first glass layer and the second glass layer. A plurality of conductive pillars extend through the first glass layer, the dielectric layer and the second glass layer, wherein the conductive pillars taper from a first diameter in the dielectric layer to a second diameter in the first glass layer and the second glass layer, and wherein the first diameter is greater than the second diameter.

公开(公告)号：US20240213170A1

公开(公告)日：2024-06-27

申请号：US18086293

申请日：2022-12-21

Applicant: Intel Corporation

Inventor： Bohan Shan ,  Haobo Chen ,  Yiqun Bai ,  Dingying Xu ,  Srinivas Venkata Ramanuja Pietambaram ,  Hongxia Feng ,  Gang Duan ,  Xiaoying Guo ,  Ziyin Lin ,  Bai Nie ,  Kyle Jordan Arrington ,  Jeremy D. Ecton ,  Brandon C. Marin

IPC: H01L23/538 ,  H01L23/498 ,  H01L25/16 ,  H01L25/18 ,  H10B80/00

CPC classification number: H01L23/5389 ,  H01L23/49816 ,  H01L23/5386 ,  H01L25/16 ,  H01L25/18 ,  H10B80/00 ,  H01L24/13

Abstract: An electronic system includes a substrate and a top surface active component die. The substrate includes a glass core layer having a glass core layer active component die disposed in a cavity and a discrete passive component disposed in another cavity; a mold layer including a mold layer active component die disposed in the mold layer; and a buildup layer contacting a top surface of the glass core layer and a bottom surface of the mold layer. The buildup layer includes electrically conductive interconnect connecting the glass core layer active component die, the discrete passive component, and the mold layer active component die. The top surface of the component die is electrically connected to the mold layer active component die.

公开(公告)号：US20240186228A1

公开(公告)日：2024-06-06

申请号：US18061237

申请日：2022-12-02

Applicant: Intel Corporation

Inventor： Haobo Chen ,  Bohan Shan ,  Kyle J. Arrington ,  Yiqun Bai ,  Kristof Darmawikarta ,  Gang Duan ,  Jeremy D. Ecton ,  Hongxia Feng ,  Xiaoying Guo ,  Ziyin Lin ,  Brandon Christian Marin ,  Bai Nie ,  Srinivas V. Pietambaram ,  Dingying Xu

IPC: H01L23/498 ,  H01L21/48

CPC classification number: H01L23/49822 ,  H01L21/486 ,  H01L23/49827

Abstract: In one embodiment, an integrated circuit package substrate includes a core layer comprising a dielectric material and a plurality of metal vias within the core layer. The dielectric material includes Silicon, Oxygen, and at least one of Boron or Phosphorus. The metal vias electrically couple a first side of the core layer and a second side of the core layer opposite the first side. The package substrate further includes a plurality of build-up layers on the core layer, the build-up layers comprising metal vias electrically connected to the metal vias of the core layer.