31.
    发明专利
    未知

    公开(公告)号:DE112005003045T5

    公开(公告)日:2007-10-31

    申请号:DE112005003045

    申请日:2005-12-02

    Applicant: MKS INSTR INC

    Abstract: A method and apparatus for activating and dissociating gases involves generating an activated gas with a plasma located in a chamber. A downstream gas input is positioned relative to an output of the chamber to enable the activated gas to facilitate dissociation of a downstream gas introduced by the gas input, wherein the dissociated downstream gas does not substantially interact with an interior surface of the chamber.

    A VERSATILE ZERO-VOLTAGE SWITCH RESONANT INVERTER FOR INDUSTRIAL DIELECTRIC BARRIER DISCHARGE GENERATOR APPLICATIONS

    公开(公告)号:SG11201404303PA

    公开(公告)日:2014-09-26

    申请号:SG11201404303P

    申请日:2013-03-18

    Applicant: MKS INSTR INC

    Abstract: A power system for a dielectric barrier discharge system, such as used for generating ozone, can include a full bridge inverter stage and parallel resonant tank outputting a signal for powering a dielectric barrier discharge cell stack. The inverter stage is controlled using a combination of pulse width modulation (PWM) and frequency modulation (FM) to enable soft switching through all load conditions—from full load to light load. A current control loop error amplifier compensator can provide a duty cycle adjustment signal to a phase shift PWM controller chip that generates the switching signals for the inverter stage. A feedback signal is also used to adjust a clock frequency time constant of the PWM controller chip to provide the FM. In one embodiment, the feedback signal is an output of an inverting amplifier connected at an output of the current control loop error amplifier compensator.

    GAS INJECTOR APPARATUS FOR PLASMA APPLICATOR

    公开(公告)号:SG11201402773XA

    公开(公告)日:2014-06-27

    申请号:SG11201402773X

    申请日:2012-12-04

    Applicant: MKS INSTR INC

    Abstract: A plasma chamber for use with a reactive gas source that includes a first conduit comprising a wall, an inlet, an outlet, an inner and outer surface, and a plurality of openings through the wall, the inlet receives a first gas for generating a reactive gas in the first conduit with a plasma formed in the first conduit. The plasma chamber also includes a second conduit that includes a wall, an inlet, and an inner surface. The first conduit is disposed in the second conduit defining a channel between the outer surface of the first conduit and the inner surface of the second conduit. A second gas provided to the inlet of the second conduit flows along the channel and through the plurality of openings of the wall of the first conduit into the first conduit to surround the reactive gas and plasma in the first conduit.

    REDUCTION OF COPPER OR TRACE METAL CONTAMINANTS IN PLASMA ELECTROLYTIC OXIDATION COATINGS

    公开(公告)号:SG185744A1

    公开(公告)日:2012-12-28

    申请号:SG2012086500

    申请日:2011-06-01

    Applicant: MKS INSTR INC

    Abstract: A method for creating an oxide layer having a reduced copper concentration over a surface of an object comprising aluminum and copper for use in a semiconductor processing system. The oxide layer produced using a plasma electrolytic oxidation process has a reduced copper peak concentration, which decreases a risk of copper contamination, and includes magnesium oxides that can be converted to magnesium halide upon exposure to an excited halogen- comprising gas or halogen-comprising plasma to increase the erosion/corrosion resistance of the oxide layer.

    Verfahren und Vorrichtung zum Schutz von Plasmakammerflächen

    公开(公告)号:DE112009005052T9

    公开(公告)日:2012-09-13

    申请号:DE112009005052

    申请日:2009-11-16

    Applicant: MKS INSTR INC

    Abstract: Ein Verfahren zum Erzeugen einer Schutzschicht auf einer Fläche eines Objektes, das Aluminium und Magnesium umfasst, zur Verwendung in einem Halbleiterverarbeitungssystem, welches das Oxidieren der Oberfläche des Objektes umfasst, wobei ein elektrolytischer Plasmaoxidationsprozess verwendet wird. Das Verfahren umfasst auch das Erzeugen eines halogenhaltigen Plasmas durch Anregen eines Gases, das ein Halogen umfasst. Das Verfahren umfasst auch das Aussetzen der oxidierten Fläche einem halogenhaltigen Plasma oder einem angeregten Gas.

    METHODS AND APPARATUS FOR PROTECTING PLASMA CHAMBER SURFACES

    公开(公告)号:SG177478A1

    公开(公告)日:2012-02-28

    申请号:SG2012000139

    申请日:2009-11-16

    Applicant: MKS INSTR INC

    Abstract: A method for creating a protective layer over a surface of an object comprising aluminum and magnesium for use in a semiconductor processing system, which includes oxidizing the surface of the object using a plasma electrolytic oxidation process. The method also includes generating a halogen-comprising plasma by exciting a gas comprising a halogen. The method also includes exposing the oxidized surface to the halogen-comprising plasma or excited gas.

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