公开(公告)号：AU3497201A

公开(公告)日：2001-08-20

申请号：AU3497201

申请日：2001-02-08

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  HILT LYNDEE L ,  EISENBEISER KURT WILLIAM

IPC: H01L21/331 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8232 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H01L27/095 ,  H01L27/14 ,  H01L27/15 ,  H01L29/26 ,  H01L29/267 ,  H01L29/732 ,  H01L33/16 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：CA2400513A1

公开(公告)日：2001-08-16

申请号：CA2400513

申请日：2001-02-08

Applicant: MOTOROLA INC

Inventor： DROOPAD RAVINDRANATH ,  HILT LYNDEE L ,  EISENBEISER KURT WILLIAM ,  RAMDANI JAMAL

IPC: H01L21/331 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8232 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H01L27/095 ,  H01L27/14 ,  H01L27/15 ,  H01L29/26 ,  H01L29/267 ,  H01L29/732 ,  H01L33/16 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026

Abstract: High quality epitaxial layers of compound semiconductor materials can be gro wn overlying large silicon wafers by first growing an accommodating buffer laye r (24) on a silicon wafer (22). The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalli ne compound semiconductor layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken car e of by the amorphous interface layer. Semiconductor devices may be formed in both the monocrystalline compound semiconductor layer and the silicon. Semiconductor devices (56, 68, 78, 92) may be formed in both the monocrystalline compound semiconductor layer and the silicon.

公开(公告)号：DE69809482T2

公开(公告)日：2003-04-03

申请号：DE69809482

申请日：1998-02-09

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183

Abstract: A longwavelength vertical cavity surface emitting laser (VCSEL) (40) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure (20) on a supporting substrate (22) and the fabrication of a highly reflective DBR mirror structure (10) on a silicon substrate (12). The DBR mirror structure (10) includes alternating layers (14, 16) of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device (40), the Si/SiO2 DBR mirror structure (10) is wafer bonded to the active VCSEL structure (20). The active VCSEL structure (20) supporting substrate (22, 24, 26) is selectively removed, to enable positioning of a second DBR mirror stack (42). The final VCSEL device si (40) characterized by emitting infra-red light.

公开(公告)号：DE69809482D1

公开(公告)日：2003-01-02

申请号：DE69809482

申请日：1998-02-09

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  LEBBY MICHAEL S ,  JIANG WENBIN

IPC: H01S3/02 ,  H01S5/00 ,  H01S5/02 ,  H01S5/183

Abstract: A longwavelength vertical cavity surface emitting laser (VCSEL) (40) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure (20) on a supporting substrate (22) and the fabrication of a highly reflective DBR mirror structure (10) on a silicon substrate (12). The DBR mirror structure (10) includes alternating layers (14, 16) of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device (40), the Si/SiO2 DBR mirror structure (10) is wafer bonded to the active VCSEL structure (20). The active VCSEL structure (20) supporting substrate (22, 24, 26) is selectively removed, to enable positioning of a second DBR mirror stack (42). The final VCSEL device si (40) characterized by emitting infra-red light.

公开(公告)号：HK1043246A1

公开(公告)日：2002-09-06

申请号：HK02104063

申请日：2002-05-31

Applicant: MOTOROLA INC

Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OVERGAARD COREY D ,  RAMDANI JAMAL ,  CURLESS JAY A ,  HALLMARK JERALD A ,  COMS WILLIAM J ,  WANGJUN

IPC: C30B20060101 ,  C30B25/00 ,  H01L20060101 ,  H01L21/00 ,  H01L21/20 ,  H01L ,  C30B

公开(公告)号：AU7696801A

公开(公告)日：2002-02-05

申请号：AU7696801

申请日：2001-07-18

Applicant: MOTOROLA INC

Inventor： EL-ZEIN NADA ,  RAMDANI JAMAL ,  EISENBEISER KURT ,  DROOPAD RAVINDRANATH

IPC: C30B25/18 ,  H01L21/20 ,  H01L21/316

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. These semiconductor materials have applications involving communications with high frequency signals including intelligent transportation systems such as automobile radar systems, smart cruise control systems, collision avoidance systems, and automotive navigation systems; and electronic payment systems that use microwave or RF signals such as electronic toll payment for various transportation systems including train fares, and toll roads, parking structures, and toll bridges for automobiles.

公开(公告)号：AU7696401A

公开(公告)日：2002-02-05

申请号：AU7696401

申请日：2001-07-18

Applicant: MOTOROLA INC

Inventor： FOLEY BARBARA M ,  OOMS WILLIAM JAY ,  PRENDERGAST JAMES E ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

IPC: H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32

公开(公告)号：AU7129301A

公开(公告)日：2002-01-08

申请号：AU7129301

申请日：2001-06-07

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  HILT LYNDEE ,  OOMS WILLIAM J

IPC: C23C16/26 ,  C30B25/02 ,  C30B25/18 ,  H01L21/20 ,  H01L21/316 ,  H01L21/318 ,  H01L21/36 ,  H01L21/822 ,  H01L21/8258 ,  H01L23/66 ,  H01L27/06 ,  H01L31/0336 ,  H01L31/0384

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24). The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer (26). Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：AU3813701A

公开(公告)日：2001-08-20

申请号：AU3813701

申请日：2001-02-08

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  HILT LYNDEE L ,  EISENBEISER KURT WILLIAM

IPC: H01L21/331 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8232 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H01L27/095 ,  H01L27/14 ,  H01L27/15 ,  H01L29/26 ,  H01L29/267 ,  H01L29/732 ,  H01L33/16 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026

Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline compound semiconductor layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer.

公开(公告)号：CA2399394A1

公开(公告)日：2001-08-16

申请号：CA2399394

申请日：2001-02-08

Applicant: MOTOROLA INC

Inventor： RAMDANI JAMAL ,  DROOPAD RAVINDRANATH ,  EISENBEISER KURT WILLIAM ,  HILT LYNDEE L

IPC: H01L21/331 ,  C30B25/18 ,  H01L21/20 ,  H01L21/205 ,  H01L21/316 ,  H01L21/318 ,  H01L21/822 ,  H01L21/8222 ,  H01L21/8232 ,  H01L21/8234 ,  H01L21/8238 ,  H01L21/8248 ,  H01L21/8249 ,  H01L21/8252 ,  H01L21/8258 ,  H01L27/04 ,  H01L27/06 ,  H01L27/092 ,  H01L27/095 ,  H01L27/14 ,  H01L27/15 ,  H01L29/26 ,  H01L29/267 ,  H01L29/732 ,  H01L33/16 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01L21/36

Abstract: High quality epitaxial layers of compound semiconductor materials can be gro wn overlying large silicon wafers by first growing an accommodating buffer laye r (24) on a silicon wafer (22). The accommodating buffer layer (24) is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer is preferably formed by oxygen diffusion through the oxide buffer and permits t he growth of a high quality monocrystalline oxide accommodating buffer layer. T he process further may comprise formation of template layers (28, 30) and a semiconducteur buffer layer (32). It's especially suited for cointegration o f compound semiconducteur and Si SMOS devices.