公开(公告)号：IT8922104A1

公开(公告)日：1991-04-24

申请号：IT2210489

申请日：1989-10-24

Applicant: SGS THOMSON MICROELECTRONICS S R L

Inventor： PALARA SERGIO ,  PAPARO MARIO ,  PELLICANO' ROBERTO

IPC: G05F1/56 ,  G05F1/10 ,  G05F3/22 ,  H02H20060101 ,  H01F7/18 ,  H01L20060101 ,  H03K17/16 ,  H03K17/615

公开(公告)号：CA2014901A1

公开(公告)日：1990-11-02

申请号：CA2014901

申请日：1990-04-19

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： RACITI SALVATORE ,  PALARA SERGIO

IPC: H01L29/73 ,  H01L21/331 ,  H01L27/02 ,  H01L27/06 ,  H01L29/732 ,  H03K17/082

Abstract: The protection device (3) comprises automatic commutating means (QP1, QP2; QP3) interposed between the base of the transistor (Q2) to be protected and the collector of the power device (Q3, Q4) to cause a flow of current having a low voltage drop between said base and said collector when the collector voltage (Vc) falls below a predetermined value.

公开(公告)号：DK630889A

公开(公告)日：1990-06-16

申请号：DK630889

申请日：1989-12-13

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO ,  MONACO PAOLO

IPC: H02P7/288 ,  H02M7/538 ,  H02P7/00 ,  H03K4/94 ,  H03K17/0812 ,  H03K17/16 ,  H03K17/687 ,  H03F3/26

Abstract: The generator of drive signals comprises a ramp generator (11) suitable for receiving a square waveform input signal and for converting it into an output signal variable between a lower level and an upper level with upward and downward ramps having a preset slope, a first comparator (21) with a non-inverting input connected to the output of said ramp generator (11) and an inverting input connected to a first reference signal source (23) and a second comparator (22) with an inverting input connected to the output of said ramp generator (11) and a non-inverting input connected to a second reference signal source (24).

公开(公告)号：IT8922428D0

公开(公告)日：1989-11-17

申请号：IT2242889

申请日：1989-11-17

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： FERLA GIUSEPPE ,  PALARA SERGIO

IPC: H01L21/331 ,  H01L29/73 ,  H01L21/822 ,  H01L27/02 ,  H01L27/04 ,  H01L27/06 ,  H01L27/082 ,  H01L29/732 ,  H01L

Abstract: The monolithic vertical-type semiconductor power device comprises an N+ type substrate (1) over which there is superimposed an N- type epitaxial layer (2) in which there is obtained aP type insulation pocket (3). Such pocket contains N type regions (4, 15) and P type regions (8) which in turn contain N+ type regions (11, 12; 13; 14) and of P type regions (6, 7, 9, 10) which define circuit components (T1, T2, T5) of the device. Insulation pocket (3) is wholly covered by a first metallisation (21, 30) connected to ground. Such metallisation (21, 30) is in turn protected by a layer of insulating material (18) suitable for allowing the crossing of metal tracks (20) or of a second metallisation (31) for the connection of the different components.

公开(公告)号：IT8906614D0

公开(公告)日：1989-10-25

申请号：IT661489

申请日：1989-10-25

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO ,  SUERI STEFANO

IPC: G05F1/40 ,  H02M1/00 ,  H02M1/36 ,  H02M

Abstract: The circuit switches the power supply of the integrated circuit over to the input voltage of the switching regulator during the initial starting phase, and over to the output of said regulator once the steady state has been reached.

公开(公告)号：IT8919502D0

公开(公告)日：1989-02-21

申请号：IT1950289

申请日：1989-02-21

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO

IPC: H01L21/822 ,  G05F1/10 ,  G05F3/22 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/082 ,  H03K17/042 ,  H03K17/615 ,  H03K17/64

Abstract: A circuit (1) for regulating the base current (IB) of a semiconductor power device (2) is accomplished with a first amplifier (10) which measures the difference in potential (V1) across a first detection resistance (11) which is passed through by a base current (IB), with a second amplifier (12), which measures the voltage (V2) across a second detection resistance (7) passed through by the emitter current (IE) of the power device (2), and with a means (13) sensitive to the difference between a current (I1), present at the output of the first amplifier (10), and a current (I2) present at the putput of the second amplifier (12). Said sensitive means (13), acting on a variable current generator (8), maintains currents I1 and I2 equal to one another, and thus maintains constant the ratio between the emitter current (IE) of the power device (2) and the base current (IB) of the same.

公开(公告)号：IT8821561D0

公开(公告)日：1988-07-29

申请号：IT2156188

申请日：1988-07-29

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： ZISA MICHELE ,  PALARA SERGIO

IPC: H02H9/04 ,  H03K17/06 ,  H03K17/0814 ,  H03K17/567 ,  H03K17/687 ,  H03K17/695 ,  H03H

Abstract: The power device (2) has a power supply terminal (3), a load terminal (5) connected to earth by means of an inductive load (1) and a control terminal (6) connected to a circuit (7) with inlet (8) for an alternating control signal. Whenever the power device (2) is turned off, a switching element (10, 30) hitches the voltage of the control terminal (6) to that of the load terminal (5), which is forced to fall by the inductive load. There is provided a discharge circuit (2, 18, 19; 21, 22) of the inductive load (1), which includes means (18, 21) having a predetermined threshold which are fired when the voltage of the load terminal (5) falls down to said predetermined threshold.

公开(公告)号：DE69025278T2

公开(公告)日：1996-09-19

申请号：DE69025278

申请日：1990-11-22

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO ,  TAGLIAVIA DONATO

IPC: G01R19/165 ,  G01R31/26 ,  G05F3/22 ,  G01R31/02 ,  H03K17/08 ,  H02H3/087

Abstract: The detection circuit of the current in an MOS type power transistor comprises a detection transistor (T2) connected with drain and gate in common to the power transistor (T1) and having characteristics such that the current (I2) flowing through it is equal to a fraction of the current (I1) flowing through power transistor (T1). Downstream from detection transistor (T2) there are arranged means (T6; T13) for comparing a first current (I3) equal to a fraction of the current (I2) flowing through detection transistor (T2) with a second reference current (Ig1) having a pre-set value and to produce a detection signal of the value of the current in power transistor (T1) in relation to the difference between said first current (I3) and the reference current (Ig1).

公开(公告)号：DE68921004T2

公开(公告)日：1995-09-21

申请号：DE68921004

申请日：1989-11-17

Applicant: SGS THOMSON MICROELECTRONICS ,  CONS RIC MICROELETTRONICA

Inventor： ZISA MICHELE ,  SCILLA GIUSEPPE ,  PALARA SERGIO

IPC: H01L29/78 ,  H01L27/02 ,  H01L27/04 ,  H03K17/08 ,  H03K17/082 ,  H03K17/14

Abstract: The device for protection against the short circuit of an MOS-type power device comprises at least one secondary branch circuit (2, 3) arranged in parallel with a main branch circuit (1) which includes the power transistor (T1). The secondary branch (2, 3) includes a control MOS transistor (T2, T3) having the same characteristics as the power transistor (T1) under control and the ability to conduct a current equal to a fraction of that flowing through the power transistor (T1). The gate of the control transistor (T2, T3) is connected directly with that of the power transistor (T1). The secondary branch also includes means (T4, T5, T6, R2, R3) sensitive to temperature which, in the case of a current flow corresponding to the short circuit current of the power transistor (T1), act on the gate common to the control and to the power transistors (T2, T3; T1) so as to lower its voltage and thus limit the conduction of same.

公开(公告)号：DE69008578T2

公开(公告)日：1994-11-24

申请号：DE69008578

申请日：1990-02-12

Applicant: SGS THOMSON MICROELECTRONICS

Inventor： PALARA SERGIO

IPC: H01L21/822 ,  G05F1/10 ,  G05F3/22 ,  H01L21/8222 ,  H01L27/04 ,  H01L27/082 ,  H03K17/042 ,  H03K17/615 ,  H03K17/64 ,  H03K17/60 ,  H03K17/04

Abstract: A circuit (1) for regulating the base current (IB) of a semiconductor power device (2) is accomplished with a first amplifier (10) which measures the difference in potential (V1) across a first detection resistance (11) which is passed through by a base current (IB), with a second amplifier (12), which measures the voltage (V2) across a second detection resistance (7) passed through by the emitter current (IE) of the power device (2), and with a means (13) sensitive to the difference between a current (I1), present at the output of the first amplifier (10), and a current (I2) present at the putput of the second amplifier (12). Said sensitive means (13), acting on a variable current generator (8), maintains currents I1 and I2 equal to one another, and thus maintains constant the ratio between the emitter current (IE) of the power device (2) and the base current (IB) of the same.