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    LIGHT-EMITTING DIODE
    31.
    发明专利
    LIGHT-EMITTING DIODE 失效

    公开(公告)号：JP2000124501A

    公开(公告)日：2000-04-28

    申请号：JP29183498

    申请日：1998-10-14

    Applicant: SONY CORP

    Inventor： OKUYAMA HIROYUKI ,  KIJIMA SATORU

    IPC: H01L33/06 ,  H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01L33/40 ,  H01L33/44 ,  H01L33/00

    Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode of a structure, wherein the diode has an active layer and clad layers and the deterioration of the diode at the time when light is radiated by an emission recombination generated in the active layer is reduced. SOLUTION: This light-emitting diode is a light-emitting diode of a structure, wherein the diode has a first conductivity type first clad layer, an active layer and a second conductivity type second clad layer, a first electrode is connected with the first clad layer, a second electrode is connected with the second clad layer and light is radiated by an emission recombination generated in the active layer when a voltage is applied to the first and second electrodes and a current is injected in the first and second electrodes, and a current injection structure from the second electrode 24 is formed into a constitution, wherein the current injection structure is divided into a plurality of pieces by a current non-injection region 23.

    SEMICONDUCTOR LIGHT EMITTING ELEMENT
    33.
    发明专利
    SEMICONDUCTOR LIGHT EMITTING ELEMENT 失效

    公开(公告)号：JPH0832180A

    公开(公告)日：1996-02-02

    申请号：JP18177994

    申请日：1994-07-11

    Applicant: SONY CORP

    Inventor： ISHIBASHI AKIRA ,  NAKAYAMA NORIKAZU ,  KIJIMA SATORU

    IPC: H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01L33/38 ,  H01L33/42 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/327 ,  H01S5/347 ,  H01S3/18 ,  H01L33/00

    Abstract: PURPOSE:To materialize a semiconductor light emitting element which can emit green or blue light from the face, using a II-VI compound semiconductor. CONSTITUTION:An n-type ZnSSe layer 3, an n-type ZnMgSSe clad layer 4, an n-type ZnSSe light waveguide layer 5, an active layer 6, a p-type ZnSSe light waveguide layer 7, a p-type ZnMgSSe clad layer 8, a p-type ZnSSe layer 9, a p-type ZnSe contact layer 10, a p-type ZnSe/ZnTeMQW layer 11, and a p-type ZnTe contact layer 12 are formed in order through an n-type ZnSe buffer layer 2 on an n-type GaAs substrate 1. Together with it, a lattice-shaped electrode 13 on p side and an Au film 14 to cover it are provided on the p-type ZnTe contact layer 12, and an electrode 15 on n side is provided on the rear of the n-type GaAs substrate 1. The active layer 6 is of single quantum well structure or multiple quantum well structure including, for example, a ZnCdSe quantum well layer.

    Manufacturing method of semiconductor light emitting device
    34.
    发明专利
    Manufacturing method of semiconductor light emitting device 审中-公开
    半导体发光器件的制造方法

    公开(公告)号：JP2005294748A

    公开(公告)日：2005-10-20

    申请号：JP2004111224

    申请日：2004-04-05

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： KIJIMA SATORU

    IPC: H01S5/16

    Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor light emitting device capable of forming end surface window structure by Zn solid phase diffusion which can be performed in low temperature and short time, furthermore is independent of thickness.
    SOLUTION: The manufacturing method of the semiconductor light emitting device comprises a process of selectively depositing a ZnO film 13b in a portion with respect to a location adjacent to a resonator end surface of a layered product having at least a first and a second conductive type cladding layers in such a manner that they sandwich active layers 6, and a process of forming a window structure 15 by performing a thermal diffusion treatment in a diffusion temperature of 600°C or less and 450°C or more, and a diffusion time of 20 minute or less and 3 minute or more, furthermore by diffusing Zn of the above-mentioned ZnO film 13b inside the above-mentioned layered product in solid phase diffusion.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：为了提供能够在低温和短时间内进行的Zn固相扩散形成端面窗结构的半导体发光器件的制造方法，此外与厚度无关。 解决方案：半导体发光器件的制造方法包括以下步骤：将ZnO膜13b选择性地沉积在相邻于具有至少第一和第二层的叠层产品的谐振器端面的位置的部分 导电型包覆层以它们夹着有源层6的方式，以及通过在扩散温度为600℃以下且450℃以上进行热扩散处理而形成窗口结构15的工序，以及扩散 时间为20分钟以上且3分钟以上，此外，通过将上述ZnO膜13b的Zn在固相扩散中扩散到上述层叠体内。 版权所有（C）2006，JPO＆NCIPI

    Semiconductor laser
    35.
    发明专利
    Semiconductor laser 审中-公开
    半导体激光器

    公开(公告)号：JP2004048079A

    公开(公告)日：2004-02-12

    申请号：JP2003372975

    申请日：2003-10-31

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： ASANO TAKEHARU ,  KIJIMA SATORU ,  TOJO TAKESHI ,  HINO TOMOKIMI ,  UCHIDA SHIRO

    IPC: H01S5/323 ,  H01S5/22 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser employing a nitride based III-V compound semiconductor in which a high output can be ensured easily.
    SOLUTION: Between a p-side contact layer 43 and a p-side electrode 52, a high-resistance layer 64 is provided in correspondence with the region of an active layer 30 except for the opposite ends thereof in the direction A of a resonator. The opposite ends of the active layer 30 in the direction A of the resonator are current non-injection regions and the part of the active layer 30 corresponding to the p-side contact layer 43 in the region except for the opposite ends in the direction A of the resonator is the current injection region. Consequently, non-emission recombination is prevented effectively on the end faces 1a and 1b of the resonator and in the vicinity thereof, a temperature rise is suppressed on the end faces 1a and 1b of the resonator and in the vicinity thereof, and COD is prevented.
    COPYRIGHT: (C)2004,JPO

    Abstract translation: 要解决的问题：提供一种使用能够容易地确保高输出的氮化物III-V族化合物半导体的半导体激光器。 解决方案：在p侧接触层43和p侧电极52之间设置高电阻层64，其与有源层30的区域相对应地设置，除了其相对端在A方向的相对端 谐振器。 有源层30在谐振器方向A的相对端是电流非注入区域，有源层30的与p侧接触层43相对应的区域除了A方向的相对端 的谐振器是电流注入区域。 因此，在谐振器的端面1a，1b上有效地防止非发光复合，并且在其附近，在谐振器的端面1a和1b及其附近抑制了温度升高，并且防止了COD 。 版权所有（C）2004，JPO

    Method for manufacturing semiconductor element and semiconductor laser
    36.
    发明专利
    Method for manufacturing semiconductor element and semiconductor laser 审中-公开
    制造半导体元件和半导体激光器的方法

    公开(公告)号：JP2003023215A

    公开(公告)日：2003-01-24

    申请号：JP2001204450

    申请日：2001-07-05

    Applicant: Sony Corp ,  ソニー株式会社

    Inventor： MIZUNO TAKASHI ,  TOJO TAKESHI ,  KIJIMA SATORU

    IPC: H01S5/323 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor element for facilitating its working by alleviating a warp of a substrate having an element formed thereon. SOLUTION: The method for manufacturing the semiconductor element comprises the steps of dry etching between adjacent laser structures 10 on a substrate 11, and forming trenches 30A parallel to laser stripes and trenches 30B (trenches 30) perpendicular to the trenches 30A. The etching depth (the depth of the trenches 30) at that time is D reaching the substrate 11 from the surface, and a width of 10 μm. A stress operating at an interface between a semiconductor layer and the substrate 11 is dispersed and reduced by forming the trenches 30. Thus, in the following steps, the warp of the substrate 11 is reduced.

    Abstract translation: 要解决的问题：提供一种通过减轻其上形成有元件的基板的翘曲来制造半导体元件以便于其工作的方法。 解决方案：制造半导体元件的方法包括以下步骤：在衬底11上的相邻激光器结构10之间进行干蚀刻，并且形成平行于激光条纹的沟槽30A和垂直于沟槽30A的沟槽30B（沟槽30）。 此时的蚀刻深度（沟槽30的深度）为D，从表面到达基板11，宽度为10μm。 通过形成沟槽30，在半导体层与基板11之间的界面处工作的应力被分散和还原。因此，在以下步骤中，基板11的翘曲减小。

    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME
    37.
    发明专利
    SEMICONDUCTOR LASER AND METHOD OF MANUFACTURING THE SAME 失效

    公开(公告)号：JP2002064247A

    公开(公告)日：2002-02-28

    申请号：JP2000247661

    申请日：2000-08-17

    Applicant: SONY CORP

    Inventor： ANZAI SHINICHI ,  KIJIMA SATORU ,  ASANO TAKEHARU ,  GOTO OSAMU

    IPC: H01S5/22 ,  H01S5/323

    Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser and method of manufacturing the same, which can enlarge an ohmic contact area between a nitride-based III-V compound semiconductor layer and an electrode to reduce contact resistance. SOLUTION: Between a p-type clad layer 18 and a p-side contact layer 19, an insulating layer 21, having an opening 21a at a place which corresponds to current injection region of an active layer 16 is formed. The p-type clad layer 18 has a projecting part 18a, which is salient on the p-side contact layer 19 side in correspondence with the opening 21a of the insulating layer 21. The p-side contact layer 19 consists of a basic growth region 19a formed so as to correspond to the projecting part 18a of the p-type clad layer 18, and a regrowth region 19b, which is grown with the basic growth region 19a and projecting part 18a as a base. The width of the p-side contact layer 19 is enlarged by the regrowth region 19b, which increases the ohmic contact area between the p-side contact layer and the p-side electrode 23, and thereby decreases the contact resistance.

    METHOD OF GROWING SEMICONDUCTOR LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE
    38.
    发明专利
    METHOD OF GROWING SEMICONDUCTOR LAYER AND SEMICONDUCTOR LIGHT EMITTING DEVICE 失效

    公开(公告)号：JP2001358082A

    公开(公告)日：2001-12-26

    申请号：JP2000184522

    申请日：2000-06-14

    Applicant: SONY CORP

    Inventor： NAKAJIMA HIROSHI ,  KOBAYASHI TOSHIMASA ,  KIJIMA SATORU

    IPC: H01L21/205 ,  H01L33/06 ,  H01L33/32 ,  H01L33/34 ,  H01S5/323 ,  H01S5/343

    Abstract: PROBLEM TO BE SOLVED: To provide a method of growing a semiconductor layer such as a GaN layer grown in excellent crystal having a small number of through dislocations and a semiconductor light emitting device formed through the same. SOLUTION: A groove G having an inner side nearly vertical to the main surface of a substrate is provided to the III-V compound semiconductor substrate such as a GaN substrate, extending in a prescribed direction such as a direction or a direction, and a III-V compound semiconductor layer such as a GaN layer is made to grow through a vapor growth method under conditions that a growth rate in the direction of the main surface of the substrate 30 is set faster than that in the direction vertical to the main surface of the substrate 30. Before a vapor growth is carried out, mask layers (33a and 33b) may be formed on the surface of the substrate 30 except the base of the groove G and a groove G forming region.

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