公开(公告)号：JPH07111132A

公开(公告)日：1995-04-25

申请号：JP33204393

申请日：1993-12-27

Applicant: TOSHIBA CORP

Inventor： ONO TOMIO ,  NAKAMOTO MASAYUKI ,  SAKAI TADASHI

IPC: H01J1/30 ,  H01J1/304 ,  H01J9/02

Abstract: PURPOSE:To provide a field emission type cold cathode not only having the good uniformity of field emission, realizing low-voltage drive, and obtaining high field emission efficiency but also easy in high integration, and a manufacturing method thereof excellent in productivity. CONSTITUTION:This cold cathode is provided with a supporting base board 6, a protruded part 7 wherein an emitter-material-made tip formed on the surface of this supporting base board 6 is sharpened, an insulator layer 8 wherein the tip part of the emitter-material-made protruded part 7 is exposed to coat the emitter-material-made protruded part 7 surface, and a high concentration impurity diffusion layer 9. A gap, between the tip part of the emitter-material- made protruded part 7 and the high concentration impurity diffusion layer 9, can be correctly controlled by the film thickness of the insulator layer 8 to form a cold cathode, resultantly obtaining high field emission efficiency.

公开(公告)号：JPH06268254A

公开(公告)日：1994-09-22

申请号：JP5361393

申请日：1993-03-15

Applicant: TOSHIBA CORP

Inventor： KITAGAWA MITSUHIKO ,  NAKAGAWA AKIO ,  SAKAI TADASHI

IPC: H01L27/12 ,  H01L21/02 ,  H01L31/12 ,  H01L33/08 ,  H01L33/10 ,  H01L33/24 ,  H01L33/34 ,  H01L33/42 ,  H01L33/00

Abstract: PURPOSE:To provide a cheap and highly efficient semiconductor device wherein various elements including a light emitting element and circuits are integrated into one piece, and optical coupling or the like can be realized high in efficiency. CONSTITUTION:A so-called SOT substrate 1, wherein an element silicon layer 4 is provided onto a silicon crystal substrate 2 through the intermediary of an oxide insulating layer 3, is used a component substrate. A silicon light- emitting element 11 of porous silicon, polysilane, siloxane, or the like is provided to the element silicon layer 4, and furthermore, if necessary, other elements including a silicon photodetective element and circuits are integrated on the layer 4.

公开(公告)号：JPH06268223A

公开(公告)日：1994-09-22

申请号：JP7911493

申请日：1993-03-12

Applicant: TOSHIBA CORP

Inventor： OMURA ICHIRO ,  NAKAGAWA AKIO ,  SAKAI TADASHI ,  SEKIMURA MASAYUKI

IPC: H01L27/12 ,  H01L21/02 ,  H01L21/331 ,  H01L21/822 ,  H01L27/04 ,  H01L29/73 ,  H01L29/78 ,  H01L29/786 ,  H01L29/784

Abstract: PURPOSE:To prevent generation of poor element function, and to form a SOI substrate by a method wherein a channel region is connected to the second main electrode through the intermediary of a second unit of a first conductivity type semiconductor layer. CONSTITUTION:A silicon layer 17 is formed on the silicon oxide film 2 located on a silicon supporting substrate 11. A p-type diffusion layer 5 (a first conductivity type semiconductor layer) is selectively formed on the above-mentioned silicon layer 17, an n-type drain diffusion layer 6 (initial second conductive type semiconductor layer) is selectively formed on the above-mentioned p-type diffusion layer 5, and the above-layers are connected to a drain electrode 11 (first main electrode) through the intermediary of an n type diffusion layer 8. An n-type source diffusion layer 4 (No.2 second conductive type semiconductor layer) is selectively formed on the above-mentioned p-type diffusion layer 5, and a gate electrode 10 (a restricted electrode) is provided on the p-type diffusion layer 5 through the intermediary of a gate insulating film 8.

公开(公告)号：JPH01239447A

公开(公告)日：1989-09-25

申请号：JP6567488

申请日：1988-03-22

Applicant: TOSHIBA CORP

Inventor： UNO SHIGEKI ,  SAKAI TADASHI

IPC: G01N27/414 ,  G01N27/30 ,  H01L29/78

Abstract: PURPOSE:To prevent the infiltration of water and moisture into electrode parts and to improve reliability by forming the sensitive gates, electrode pads and leads of FET elements to an opposite surface and molding the pads and leads by using a frame and resins. CONSTITUTION:Islands 2 of silicon are formed by etching the upper silicon layer of a silicon wafer. The electrode pads 3, 3' of the drains and sources of the FET elements are provided on the islands 2 and further, the sensitive gates are provided to the base of the islands 2 to form chips. Chip holding holes 13 and leads 12 are previously provided on the substrate 11 and the chips are installed in the holes 13 to electrically connect the pads 3, 3' and the leads 12. The frame 14 larger than the holes 13 are thereafter placed on the chips and the silicone resin and epoxy resin are packed into the frame. Since the pads and leads are provided on the surface opposite to the sensitive gates, the immersion of the pads and leads in a soln. is obviated and the infiltration of the water and moisture is prevented by the frame and the packed resins. The reliability is thus improved.

公开(公告)号：JPS6430768A

公开(公告)日：1989-02-01

申请号：JP18655487

申请日：1987-07-28

Applicant: TOSHIBA CORP

Inventor： UNO SHIGEKI ,  TAKIGAWA OSAMU ,  HIRAKI HIDEAKI ,  SAKAI TADASHI

IPC: B41J2/335

Abstract: PURPOSE:To enhance strength and durability without damaging the beneficial point possessed by an aluminum electrode, in a thermal head having heat gener ating resistor film and an electrode film, by forming the electrode film from a conductor based on Al. CONSTITUTION:In a thermal head wherein a heat generating resistor film 3 and an electrode film 4 are provided on an insulating substrate 1 composed of alumina, the electrode film 4 is formed from a conductor based on Al. This electrode film 4 is pref. formed from 99.5-90mol% Al and 0.5-10mol% Mg or 99.3-92mol% Al, 0.5-5mol% Mg and 0.2-3.0mol% Si. The membrane electrode material composed of a composition wherein a definite amount only of Mg or Mg and Si is added to Al as mentioned above has excellent capacities including durability as the electrode of the thermal head. When the conductor based on Al is used as the electrode material as mentioned above, the strength of the electrode material is increased and sufficient durability can be secured even when rough, hard and thick recording paper is used. Further, fine processing due to a photoresist etching process can be easily performed and mass productivity is also excellent.

公开(公告)号：JPS62123795A

公开(公告)日：1987-06-05

申请号：JP26238585

申请日：1985-11-25

Applicant: TOSHIBA CORP

Inventor： KIKUCHI NORIMI ,  IYOGI YASUSHI ,  SAKAI TADASHI ,  HAMAMURA KIYOTO

IPC: C04B41/88 ,  H05K1/09 ,  H05K3/46

公开(公告)号：JPS6250654A

公开(公告)日：1987-03-05

申请号：JP19157485

申请日：1985-08-30

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  KATSURA MASAKI

IPC: G01N27/00

Abstract: PURPOSE:To obtain a sensor which can be easily attached to a pipe, obviates the generation of leakage and short circuiting and permits stable measurement of a soln. for a long period of time by forming sources, drains and insulating films of the conduction type opposite from the conduction type of a semiconductor substrate on both surfaces of the substrate including part of the inside wall of a through-hole having the inside wall consisting of the slope provided to the substrate. CONSTITUTION:The through-hole 33 is formed to the p type (100)Si substrate 31 by anisotropic etching with an oxide film 32 provided to the substrate as a mask. After the oxide film 22 is removed, an oxide film 34 is formed and P is thermally diffused thereto to form an n type diffused layer 35. The film 34 is removed, an oxide film 36 is formed and B is thermally diffused to form a channel stopper region 37. An oxide film 38 is formed and is formed with a source region 39, drain region 40 and channel region 41 by anisotropic etching. An oxide film 42 and an Si3N4 film 43 are formed. The regions 39, 40 and the films 43, 43 are partly selectively etched to open a contact hole. Cr, Cr-Cu and Au are successively deposited by evaporation to form contact pads 44, 45. The wafer is cut and divided. Leads are connected to the pads 44, 45, by which the semiconductor sensor is obtd.

公开(公告)号：JPS623655A

公开(公告)日：1987-01-09

申请号：JP14378685

申请日：1985-06-29

Applicant: TOSHIBA CORP

Inventor： SAKAI TADASHI ,  KATSURA MASAKI

IPC: G01N27/414 ,  G01N27/00 ,  G01N27/30 ,  H01L29/78

Abstract: PURPOSE:To measure a solution for a long time by providing a through hole in the recessed part of the first conductive type semiconductor substrate and forming the second conductive type source and drain area on both faces of the substrate, and forming an insulating film on both faces of the substrate including the inside face of the through hole. CONSTITUTION:A through hole 33 is provided in the recessed part of a p-type silicon substrate 31, and n type source and drain areas 34 and 35 are formed on both faces of the substrate 31. An insulating film 37 is formed on both faces of the substrate 31 including the inside wall of the hole 33. A part of the insulat ing film 37 on the source area 34 and a p type diffused layer 36 or on the drain area 35 is etched selectively to from contact pads 38 and 39. Lead wires 40 and 41 are connected to these pads 38 and 39. Consequently, connection parts between source and drain areas 34 and 35 and lead wires 40 and 41 are on the outside of a tube and are not immersed in the solution. It is unnecessary to coat connection parts with a resin therefore. Thus, insulation defects or the like due to swelling of the resin are not caused, and the solution is measured stably for a long time.

公开(公告)号：JPS5970951A

公开(公告)日：1984-04-21

申请号：JP18092282

申请日：1982-10-15

Applicant: Toshiba Corp

Inventor： KATSURA MASAKI ,  TAKIGAWA OSAMU ,  SHIRATORI MASAYUKI ,  SAKAI TADASHI

IPC: G01N27/04 ,  G01N27/12

CPC classification number: G01N27/12

Abstract: PURPOSE:To reduce heat loss and to efficiently perform the heating of a gas sensor, by a method wherein notch parts are respectively provided to end parts of an insulating substrate provided with the gas sensor in the longitudinal direction thereof and these end parts having the notched parts are fixed to a frame shaped casing. CONSTITUTION:Notched parts 2a, 2b are respectively provided to the end parts of a rectangular flat plate shaped insulating substrate 1 comprising Al2O3 in the longitudinal direction so as to be made symmetrical with respect to said longitudinal direction. A gas sensor 3 comprising a metal oxide semiconductor is provided to the upper surface of the substrate region between the notch parts 2a, 2b while a heater 5 is provided to the back surface region corresponding to the gas sensor 3. The end parts having the notch parts 2a, 2b are fixed to a casing 8 having a rectangular recessed part 7 through an inorg. adhesive 9. By this constitution, the heat loss of the insulating substrate having the gas sensor and the heater to the casing is reduced and the heating of the gas sensor due to the heater can be efficiently and uniformly performed.

Abstract translation: 目的：为了减少热损失并有效地执行气体传感器的加热，通过这样一种方法，其中在其长度方向上分别设置有设置有气体传感器的绝缘基板的端部的切口部分，并且这些端部具有切口 零件被固定在框架形壳体上。 构成：将切口部分2a，2b分别设置在纵向方向上包括Al 2 O 3的矩形平板状绝缘基板1的端部，以便相对于所述纵向方向对称。 在切口部2a，2b之间的基板区域的上表面设有包含金属氧化物半导体的气体传感器3，同时在对应于气体传感器3的背面区域设置有加热器5。 部件2a，2b通过inorg固定到具有矩形凹部7的壳体8上。 通过这种结构，具有气体传感器和加热器的绝缘基板的热损失降低，并且可以有效地均匀地执行由加热器引起的气体传感器的加热。

公开(公告)号：JP2015050393A

公开(公告)日：2015-03-16

申请号：JP2013182560

申请日：2013-09-03

Applicant: 株式会社東芝 ,  Toshiba Corp

Inventor： SUZUKI MARIKO ,  SAKAI TADASHI ,  OTA CHIHARU ,  TAKAO KAZUTO ,  SHINOHE TAKASHI

IPC: H01L29/861 ,  H01L21/20 ,  H01L21/205 ,  H01L21/329 ,  H01L21/331 ,  H01L29/06 ,  H01L29/16 ,  H01L29/73 ,  H01L29/868

CPC classification number: H01L29/1602 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/041 ,  H01L21/042 ,  H01L29/045 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/6603 ,  H01L29/66037 ,  H01L29/7325 ,  H01L29/861 ,  H01L29/868

Abstract: 【課題】高い絶縁破壊耐圧を実現する半導体装置を提供する。【解決手段】実施形態の半導体装置は、i型またはp型の第1のダイヤモンド半導体層と、第1のダイヤモンド半導体層上に設けられるn型の第2のダイヤモンド半導体層と、第1のダイヤモンド半導体層と第2のダイヤモンド半導体層とを含むように設けられ、上面が{100}面から?10度以内の面方位を有し、側面が{100}面から ?20度の方向に対し20度以上90度以下傾斜するメサ構造と、側面に設けられ、第2のダイヤモンド半導体層と接し、第2のダイヤモンド半導体層よりn型の不純物濃度が低いn型の第1のダイヤモンド半導体領域と、を備える。【選択図】図1

Abstract translation: 要解决的问题：提供一种实现高介电击穿电压的半导体器件。解决方案：一个实施例的半导体器件包括：i型或p型第一金刚石半导体层; 设置在所述第一金刚石半导体层上的n型第二金刚石半导体层; 设置为包括第一金刚石半导体层和第二金刚石半导体层的台面结构，其中顶面具有在{100}面±10度的范围内的平面方向，并且侧面倾斜不小于 相对于{100}面的<011>±20度范围内的方向为20度且不超过90度; 以及n型第一金刚石半导体区域，其设置在侧面上并与第二金刚石半导体层接触并且具有比第二金刚石半导体层的n型杂质浓度低的n型杂质浓度。