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    CONTROLLED FABRICATION OF GAPS IN ELECTRICALLY CONDUCTING STRUCTURES
    31.
    发明申请
    CONTROLLED FABRICATION OF GAPS IN ELECTRICALLY CONDUCTING STRUCTURES 审中-公开
    电导体结构中GAPS的控制制造

    公开(公告)号：WO2004077503A3

    公开(公告)日：2005-03-31

    申请号：PCT/US2004002502

    申请日：2004-01-29

    Applicant: HARVARD COLLEGE

    Inventor： GOLOVCHENKO JENE A ,  SCHURMANN GREGOR M ,  KING GAVIN M ,  BRANTON DANIEL

    IPC: B81B1/00 ,  B81C99/00 ,  H01L20060101 ,  H01L21/66

    CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L22/14 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A method for controlling a gap in an electrically conducting solid state structure provided with a gap. The structure is exposed to a fabrication process environment conditions of which are selected to alter an extent of the gap. During exposure of the structure to the process environment, a voltage bias is applied across the gap. Electron tunneling current across the gap is measured during the process environment exposure and the process environment is controlled during process environment exposure based on tunneling current measurement. A method for controlling the gap between electrically conducting electrodes provided on a support structure. Each electrode has an electrode tip separated from other electrode tips by a gap. The electrodes are exposed to a flux of ions causing transport of material of the electrodes to corresponding electrode tips, locally adding material of the electrodes to electrode tips in the gap.

    Abstract translation: 一种用于控制具有间隙的导电固态结构中的间隙的方法。 该结构暴露于制造工艺环境条件，其条件被选择以改变间隙的程度。 在将结构暴露于工艺环境中时，跨越间隙施加电压偏置。 在工艺环境暴露期间测量跨越间隙的电子隧道电流，并且基于隧道电流测量在工艺环境暴露期间控制工艺环境。 一种用于控制设置在支撑结构上的导电电极之间的间隙的方法。 每个电极具有通过间隙与其它电极尖端分离的电极头。 电极暴露于离子通量，导致电极的材料传输到相应的电极尖端，将电极的材料局部地添加到间隙中的电极尖端。

    GAS PHASE SILICON ETCHING WITH BROMINE TRIFLUORIDE
    32.
    发明申请
    GAS PHASE SILICON ETCHING WITH BROMINE TRIFLUORIDE 审中-公开
    使用溴化三氟化硼进行气相硅蚀刻

    公开(公告)号：WO98032163A1

    公开(公告)日：1998-07-23

    申请号：PCT/US1998/001296

    申请日：1998-01-22

    IPC: B81C1/00 ,  H01L21/00 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/302

    CPC classification number: B81C1/00531 ,  B81C99/0025 ,  B81C2201/0132 ,  B81C2201/0138 ,  H01J2237/3344 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/32135 ,  H01L21/67069

    Abstract: An apparatus and method for gas-phase bromine trifluoride (BrF3) silicon isotropic room temperature etching system for both bulk and surface micromachining. The gas-phase BrF3 can be applied in a pulse mode and in a continuous flow mode. The etching rate in pulse mode is dependent on gas concentration, reaction pressure, pulse duration, pattern opening area and effective surface area.

    Abstract translation: 用于体相和表面微加工的气相溴化三氟化硼（BrF 3）硅各向同性室温蚀刻系统的装置和方法。 气相BrF3可以以脉冲模式和连续流动模式施加。 脉冲模式下的蚀刻速率取决于气体浓度，反应压力，脉冲持续时间，图案开口面积和有效表面积。

    METHOD AND PROCESSING SYSTEM FOR MONITORING STATUS OF SYSTEM COMPONENTS
    34.
    发明申请
    METHOD AND PROCESSING SYSTEM FOR MONITORING STATUS OF SYSTEM COMPONENTS 审中-公开
    用于监控系统组件状态的方法和处理系统

    公开(公告)号：WO2005034210A1

    公开(公告)日：2005-04-14

    申请号：PCT/US2004/032170

    申请日：2004-09-30

    Applicant: TOKYO ELECTRON LIMITED ,  TOKYO ELECTRON AMERICA, INC. ,  O'MEARA, David, L. ,  BURDETT, Daniel, Craig ,  CABRAL, Stephen, H. ,  LUESINK, Gert ,  KOSTENKO, John, William ,  WAJDA, Cory

    Inventor： O'MEARA, David, L. ,  BURDETT, Daniel, Craig ,  CABRAL, Stephen, H. ,  LUESINK, Gert ,  KOSTENKO, John, William ,  WAJDA, Cory

    IPC: H01L21/00

    CPC classification number: H01L21/67276 ,  B81C99/0065 ,  B81C2201/0138 ,  H01L21/67253

    Abstract: A method and system for monitoring status of a system component (200, 300) during a process. The method includes exposing a system component (200, 300) to a reactant gas during a process, where the reactant gas is capable of etching the system component material to form an erosion product, and monitoring release of the erosion product during the process to determine status of the system component (200, 300). Processes that can be monitored include a chamber cleaning process, a chamber conditioning process, a substrate etching process, and a substrate film formation process. The system component (200, 300) can be a consumable system part such as a process tube (25), a shield, a ring, a baffle, an injector, a substrate holder (35, 112), a liner, a pedestal, a cap cover, an electrode, and a heater (15, 20, 65, 70, 122), any of which can further include a protective coating. The processing system (1, 100) includes the system component (200,300) in a process chamber (10, 102), a gas injection system (94, 104) for introducing the reactant gas, a chamber protection system (92, 108) for monitoring the status of the system component (200, 300), and a controller (90, 124) for controlling the processing system (1, 100) in response to the status.

    Abstract translation: 一种用于在过程期间监视系统组件（200,300）的状态的方法和系统。 该方法包括在反应气体过程中将系统组分（200,300）暴露于反应气体中，其中反应气体能够蚀刻系统组分材料以形成侵蚀产物，并且在该过程中监测侵蚀产物的释放以确定 系统组件的状态（200,300）。 可以监测的方法包括室清洁过程，室调节过程，基板蚀刻工艺和基板成膜工艺。 系统部件（200,300）可以是消耗系统部件，例如处理管（25），屏蔽件，环形件，挡板，注射器，衬底保持器（35,112），衬垫，基座， 帽盖，电极和加热器（15,20,65,70,122），其中任何一个可进一步包括保护涂层。 处理系统（1,100）包括处理室（10,102）中的系统组件（200,300），用于引入反应气体的气体注入系统（94,104），用于 监视系统组件（200,300）的状态，以及用于响应于该状态控制处理系统（1,100）的控制器（90,124）。

    PROCESS FOR PRODUCING MICROMECHANICAL STRUCTURES BY MEANS OF REACTIVE ION ETCHING
    35.
    发明申请
    PROCESS FOR PRODUCING MICROMECHANICAL STRUCTURES BY MEANS OF REACTIVE ION ETCHING 审中-公开
    通过反应离子蚀刻生产微机械结构的方法

    公开(公告)号：WO1996008036A1

    公开(公告)日：1996-03-14

    申请号：PCT/NL1995000221

    申请日：1995-06-22

    Applicant: STICHTING VOOR DE TECHNISCHE WETENSCHAPPEN ,  JANSEN, Henricus, Venantius ,  DE BOER, Meint, Jelle ,  LEGTENBERG, Rob ,  ELDERS, Job ,  ELWENSPOEK, Michael, Curt ,  FLUITMAN, Johannes, Hermanus, Josephus

    Inventor： STICHTING VOOR DE TECHNISCHE WETENSCHAPPEN

    IPC: H01L21/306

    CPC classification number: H01L21/3065 ,  B81C1/00626 ,  B81C99/0065 ,  B81C2201/0132 ,  B81C2201/0138 ,  B82Y15/00

    Abstract: A process for producing etched micromechanical structures is provided, using Reactive Ion Etching (RIE), wherein a substrate is etched with a silicon etch gas mixture to obtain an aspect ratio of at least 10. The process comprises the steps of: a) anisotropic etching using a first silicon etch gas to obtain a primary microstructure; b) depositing a halocarbon film on the walls of the primary microstructure; d) isotropic etching using a second silicon etch gas, to obtain a final microstructure; said steps being carried out in a single run. Optional further steps are: c) etching the floor of the primary microstructure using said first silicon etch gas; and e) depositing a halocarbon film on the surface of the final microstructure. The process may involve applying high pressure (5-30 Pa) and low energy (10-90 eV), and preferably the use of a sulphur hexafluoride/oxygen/trifluoromethane plasma. The process can be controlled by monitoring the blackening of a silicon test surface as a function of varying the process parameters.

    Abstract translation: 提供了使用反应离子蚀刻（RIE）制造蚀刻微机械结构的方法，其中用硅蚀刻气体混合物蚀刻衬底以获得至少10的纵横比。该方法包括以下步骤：a）各向异性蚀刻 使用第一硅蚀刻气体来获得初级微结构; b）在主要微结构的壁上沉积卤碳膜; d）使用第二硅蚀刻气体进行各向同性蚀刻，以获得最终的微结构; 所述步骤是在单次运行中进行的。 可选的另外的步骤是：c）使用所述第一硅蚀刻气体蚀刻所述主要微结构的底板; 和e）在最终微结构的表面上沉积卤代碳膜。 该方法可以包括施加高压（5-30Pa）和低能量（10-90eV），优选使用六氟化硫/氧/三氟甲烷等离子体。 可以通过监测硅测试表面的变黑作为改变工艺参数的函数来控制该过程。

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