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    MICRO-MACHINED THIN FILM HYDROGEN GAS SENSOR, AND METHOD OF MAKING AND USING THE SAME
    1.
    发明申请
    MICRO-MACHINED THIN FILM HYDROGEN GAS SENSOR, AND METHOD OF MAKING AND USING THE SAME 审中-公开
    微加工薄膜氢气传感器及其制造和使用方法

    公开(公告)号：WO0043772A9

    公开(公告)日：2001-11-15

    申请号：PCT/US0000765

    申请日：2000-01-12

    Applicant: ADVANCED TECH MATERIALS

    Inventor： DIMEO FRANK JR ,  BHANDARI GAUTAM

    IPC: G01N21/59 ,  G01N21/75 ,  G01N21/78 ,  G01N27/04 ,  G01N27/12 ,  G01N27/22 ,  G01N33/00 ,  G01N7/00 ,  H01C7/00

    CPC classification number: G01N27/128 ,  G01N21/59 ,  G01N21/783 ,  G01N27/12 ,  G01N33/0014 ,  G01N33/005 ,  G01N2291/02863 ,  Y10T436/22

    Abstract: A hydrogen sensor including a thin film sensor element formed, e.g., by metalorganic chemical vapor deposition (MOCVD) or physical vapor deposition (PVD), on a micro-hotplate structure. The thin film sensor element includes a film of a hydrogen-interactive metal film that reversibly interacts with hydrogen to provide a correspondingly altered response characteristic, such as optical transmissivity, electrical conductance, electrical resistance, electrical capacitance, magnetoresistance, photoconductivity, etc., relative to the response characteristic of the film in the absence of hydrogen. The hydrogen-interactive metal film may be overcoated with a thin film hydrogen-permeable barrier layer to protect the hydrogen-interactive film from deleterious interaction with non-hydrogen species. The hydrogen sensor of the invention may be usefully employed for the detection of hydrogen in an environment susceptible to the incursion or generation of hydrogen and may be conveniently configured as a hand-held apparatus.

    Abstract translation: 一种氢传感器，其包括在微电镀板结构上例如通过金属有机化学气相沉积（MOCVD）或物理气相沉积（PVD）形成的薄膜传感器元件。 薄膜传感器元件包括与氢可逆地相互作用的氢相互作用金属膜的膜，以提供相对改变的响应特性，例如光透射率，电导率，电阻，电容，磁电阻，光电导等等 在不存在氢气的情况下对膜的响应特性。 氢相互作用金属膜可以用薄膜氢可渗透阻挡层进行外涂，以保护氢相互作用膜免受与非氢物质的有害相互作用。 本发明的氢传感器可有效地用于在易于入侵或产生氢的环境中检测氢气，并且可以方便地配置为手持设备。

    Optical hydrogen detector
    4.
    发明专利
    Optical hydrogen detector 未知

    公开(公告)号：AU1614101A

    公开(公告)日：2001-05-30

    申请号：AU1614101

    申请日：2000-11-15

    Applicant: ADVANCED TECH MATERIALS

    Inventor： DIMEO FRANK JR ,  KING MACKENZIE E

    IPC: G01N31/00 ,  G01N21/59 ,  G01N21/77 ,  G01N31/22 ,  G01N33/00 ,  G01N21/00 ,  G01N7/00 ,  G01N30/96

    Abstract: A hydrogen gas detector for detection of hydrogen gas in a gaseous environment. The detector comprises a light/heat source, an optical detector, and an optical barrier between the source and detector. The optical barrier responds to the presence of hydrogen by responsively changing from a first optical state to a different second optical state, whereby transmission of light from the light/heat source through the optical barrier is altered by the presence of hydrogen and the altered transmission is sensed by the optical detector to provide an indication of the presence of hydrogen gas in the gaseous environment.

    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
    6.
    发明申请
    CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    半导体加工系统的清洁

    公开(公告)号：WO2007127865A3

    公开(公告)日：2008-12-11

    申请号：PCT/US2007067542

    申请日：2007-04-26

    Applicant: ADVANCED TECH MATERIALS ,  DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    Inventor： DIMEO FRANK JR ,  DIETZ JAMES ,  OLANDER W KARL ,  KAIM ROBERT ,  BISHOP STEVEN E ,  NEUNER JEFFREY W ,  ARNO JOSE I ,  MARGANSKI PAUL J ,  SWEENEY JOSEPH D ,  ELDRIDGE DAVID ,  YEDAVE SHARAD ,  BYL OLEG ,  STAUF GREGORY T

    IPC: C25F1/00 ,  C25F3/12

    CPC classification number: C23C14/564 ,  C23C16/4405 ,  H01J37/32412 ,  H01J37/32862

    Abstract: A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.

    Abstract translation: 一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。 为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。 当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。 当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。 使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F， ，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

    APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS
    8.
    发明申请
    APPARATUS AND PROCESS FOR SENSING TARGET GAS SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS 审中-公开
    在半导体加工系统中感测目标气体物种的装置和工艺

    公开(公告)号：WO2005072161A3

    公开(公告)日：2005-12-29

    申请号：PCT/US2005001409

    申请日：2005-01-14

    Applicant: ADVANCED TECH MATERIALS ,  CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

    Inventor： CHEN PHILIP S H ,  CHEN ING-SHIN ,  DIMEO FRANK JR ,  NEUNER JEFFREY W ,  WELCH JAMES ,  ROEDER JEFFREY F

    IPC: G01N9/00 ,  G01N27/12 ,  G01N33/00

    CPC classification number: G01N27/16

    Abstract: A gas detector and process for detecting a target gas species, such as a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The gas detector in one aspect employs a nickel-containing filament that is sensitive to the fluorine-containing species, which can function both as a sensing component and as a heat source when elevated temperature sensing is required. The gas detector in one aspect employs an elongated gas sensor element that can be vertically mounted on a support structure. Vertical mounting of such elongated gas sensor element on the support structure significantly improves the signal strength, reduces the response time, minimizes the footprint of the gas detector, and provides structural flexibility for accommodating thermal expansion/contraction of such gas sensor element.

    Abstract translation: 一种用于检测目标气体种类的气体检测器和方法，例如含有其的气体中的含氟物质，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。一个方面的气体检测器 采用对含氟物质敏感的含镍丝，当需要高温检测时，它们既可以作为传感元件又可作为热源。 气体检测器在一个方面使用可以垂直安装在支撑结构上的细长的气体传感器元件。 这种细长气体传感器元件在支撑结构上的垂直安装显着地改善了信号强度，减少了响应时间，使气体检测器的占地面积最小化，并提供了用于适应这种气体传感器元件的热膨胀/收缩的结构灵活性。

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