公开(公告)号：WO2011093043A1

公开(公告)日：2011-08-04

申请号：PCT/JP2011/000318

申请日：2011-01-21

Applicant: 国立大学法人北海道大学 ,  郷原一寿 ,  川原宏太

Inventor： 郷原一寿 ,  川原宏太

IPC: G01N23/20 ,  G01N21/47 ,  G02B21/36 ,  H01J37/22 ,  H01J37/295

CPC classification number: G02B21/365 ,  G01N23/20058 ,  G02B26/0808 ,  G02B27/4205 ,  G03H1/0866 ,  G03H5/00 ,  G03H2001/005 ,  G03H2001/0816 ,  G03H2226/13 ,  H01J37/222 ,  H01J37/244 ,  H01J37/295 ,  H01J2237/223 ,  H01J2237/226

Abstract: 　入射ビームの角度拡がりの影響を低減できる回折顕微法。この方法では、ビームを試料に照射し、試料からの回折パターンの強度を計測し、計測した回折パターンの強度をもとにフーリエ反復位相回復法を用いて物体の像を再構成する回折顕微法において、入射ビームの角度拡がりによってコンボリューションされた回折パターンに対して、デコンボリューションを用いてフーリエ反復位相回復を行う。

Abstract translation: 公开了能够减小梁的入射角范围的增加的影响的衍射显微镜。 具体公开的是衍射显微镜，其中光束入射到样品上，其中测量来自样品的衍射图案的强度，并且其中使用傅立叶互动相位检索重建物体的图像，其中基于 测量的衍射图的强度。 在这种方法中，傅立叶互动相位检索是通过对波束的入射角范围的增加而进行卷积的衍射图案上的去卷积进行的。

公开(公告)号：WO2009068763A4

公开(公告)日：2009-09-11

申请号：PCT/FR2008001302

申请日：2008-09-17

Applicant: CENTRE NAT RECH SCIENT ,  HYTCH MARTIN ,  SNOECK ETIENNE ,  HOUDELLIER FLORENT ,  HUE FLORIAN

Inventor： HYTCH MARTIN ,  SNOECK ETIENNE ,  HOUDELLIER FLORENT ,  HUE FLORIAN

IPC: G01N23/20 ,  H01J37/26

CPC classification number: H01J37/26 ,  H01J37/295 ,  H01J2237/151 ,  H01J2237/1514 ,  H01J2237/2614 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Method of measuring nanoscale deformations in a portion (B) of a crystalline specimen, comprising the following steps: i) a lamella-shaped specimen comprising a measurement zone (B) and a reference zone (A), the latter being assumed to be free of deformations and coplanar with the measurement zone, is prepared; ii) one face of said specimen is illuminated by an electron beam (Fin); iii) a beam (F1 B) of the radiation diffracted by the measurement zone (B) is superposed on a beam (F1 A) of the radiation diffracted by the reference zone (A) so as to cause these two beams to interfere; iv) the spatial periodicity and the orientation of the fringes of the interference pattern (FI) are measured; and v) a difference in crystal parameter and/or orientation between said reference zone and measurement zone is deduced therefrom, this being indicative of a state of nanoscale deformation of said measurement zone. Device and system for implementing such a method.

公开(公告)号：WO2006088159A1

公开(公告)日：2006-08-24

申请号：PCT/JP2006/302884

申请日：2006-02-17

Applicant: 国立大学法人京都工芸繊維大学 ,  遠藤 久満 ,  阿知原 雅人 ,  津野 勝重 ,  及川 哲夫

Inventor： 遠藤 久満 ,  阿知原 雅人 ,  津野 勝重 ,  及川 哲夫

IPC: H01J37/295 ,  H01J37/141

CPC classification number: H01J37/26 ,  G03H1/0866 ,  G03H5/00 ,  G03H2001/045 ,  H01J37/141 ,  H01J37/295 ,  H01J2237/1415 ,  H01J2237/1514 ,  H01J2237/153 ,  H01J2237/228 ,  H01J2237/2614

Abstract: An electron microscope capable of re-constructing a microscope image free of the imaging aberration due to the imaging lens by using a hologram of diffraction pattern and a composite irradiation lens used in such an electron microscope. The electron microscope comprises an electron source (11), a condenser lens (12), a biprism (13) for splitting an electron beam fed from the condenser lens (12) into first and second coherent electron beams (L1, L2) parallel to each other, a composite irradiation lens (15) for making the first electron beam (L1) a parallel wave and making the second electron beam (L2) a converging wave converging at a predetermined distance, a specimen stage (16) for holding a specimen irradiated with the first electron beam (L1), a detector (17) for detecting a hologram of the diffraction pattern formed by the interference between the first and second electron beams (L1, L2), a computing unit (18) for re-constructing a microscope image of the specimen by subjecting the hologram fed from the detector (17) to predetermined Fourier transform, and a display (19) for displaying the re-constructed microscope image.

Abstract translation: 一种电子显微镜，其能够通过使用衍射图案的全息图和在这种电子显微镜中使用的复合照射透镜来重构由于成像透镜而没有成像像差的显微镜图像。 电子显微镜包括电子源（11），聚光透镜（12），用于将从聚光透镜（12）馈送的电子束分成第一和第二相干电子束（L1，L2）的双棱镜（13） 彼此成为用于使第一电子束（L1）成为平行波并使第二电子束（L2）以会聚波收敛于预定距离的复合照射透镜（15），用于保持样本的样本台（16） 用于检测由第一和第二电子束（L1，L2）之间的干涉形成的衍射图案的全息图的检测器（17），用于再构造的计算单元（18） 通过对从检测器（17）馈送的全息图进行预定的傅里叶变换，以及用于显示重构的显微镜图像的显示器（19）来对样本进行显微镜图像。

公开(公告)号：WO2006011185A1

公开(公告)日：2006-02-02

申请号：PCT/JP2004/010485

申请日：2004-07-23

Applicant: 富士通株式会社 ,  石井 俊哉 ,  安藤 幸樹

Inventor： 石井 俊哉 ,  安藤 幸樹

IPC: G01B15/02

CPC classification number: H01J37/295 ,  G01B15/02 ,  G01N23/20058

Abstract: A method for examining the results after the manufacturing process of an LSI (Large scale integration) device, particularly, an examining method used for quickly and accurately examining the cross section fine structure of an LSI device produced after the manufacturing process. Its examining device and a semiconductor device suited to the examination are also disclosed. The examining method is characterized by comprising a sample making step of thinning a semiconductor chip in such a way that the substrate crystal and a portion added in the manufacturing process are included, a step of applying an electron beam to the semiconductor chip, a step of detecting an electron beam passing through the semiconductor chip to create an electron beam diffraction image, a step of removing the electron beam diffracted by the substrate crystal, and a step of comparing the lattice fringes obtained from the substrate crystal with the thickness of the portion added in the manufacturing process.

Abstract translation: 特别是用于快速准确地检查在制造过程之后生产的LSI器件的截面微细结构的检查方法的LSI（大规模集成）器件的制造过程之后的结果的检查方法。 还公开了其检查装置和适合于检查的半导体装置。 检查方法的特征在于包括以下方式使半导体芯片变薄的样品制作步骤：使衬底晶体和在制造工艺中添加的部分被包括在内，对半导体芯片施加电子束的步骤， 检测通过半导体芯片的电子束以产生电子束衍射图像，去除由衬底晶体衍射的电子束的步骤，以及将从衬底晶体获得的晶格条纹与添加的部分的厚度进行比较的步骤 在制造过程中。

公开(公告)号：EP2991095B1

公开(公告)日：2018-01-31

申请号：EP14002942.2

申请日：2014-08-25

Applicant: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

Inventor： Hirscht, Julian

IPC: H01J37/02 ,  H01J37/295 ,  H01J37/065 ,  H01J37/073

CPC classification number: H01J37/023 ,  H01J37/065 ,  H01J37/073 ,  H01J37/248 ,  H01J37/26 ,  H01J37/261 ,  H01J37/295 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/16

Abstract: A high voltage feedthrough assembly 100 for providing an electric potential in a vacuum environment comprises a flange connector 10 being adapted for a connection with a vacuum vessel 201, wherein the flange connector 10 has an inner side facing to the vacuum vessel 201 and an outer side facing to an environment of the vacuum vessel 201, a vacuum-tight insulator tube 20 having a longitudinal extension with a first end facing to the flange connector 10 and a second end being adapted for projecting into the vacuum vessel 201, and an electrode device coupled to the second end of the insulator tube 20, wherein the electrode device has a front electrode 31 facing to the vacuum vessel 201 and a cable adapter 32 for receiving a high-voltage cable 214, wherein a flexible tube connector 40 is provided for a vacuum-tight coupling of the insulator tube 20 with the flange connector 10, and a manipulator device 50 is connected with the insulator tube 20 for adjusting a geometrical arrangement of the insulator tube 20 relative to the flange connector 10. Furthermore, an electron diffraction apparatus 200 including the high voltage feedthrough assembly 100 and a method of manipulating an electrode device in a vacuum environment are described.

公开(公告)号：EP2991095A1

公开(公告)日：2016-03-02

申请号：EP14002942.2

申请日：2014-08-25

Applicant: Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V.

Inventor： Hirscht, Julian

IPC: H01J37/02 ,  H01J37/295 ,  H01J37/065 ,  H01J37/073

CPC classification number: H01J37/023 ,  H01J37/065 ,  H01J37/073 ,  H01J37/26 ,  H01J37/295 ,  H01J2237/06333 ,  H01J2237/06341 ,  H01J2237/16

Abstract: A high voltage feedthrough assembly 100 for providing an electric potential in a vacuum environment comprises a flange connector 10 being adapted for a connection with a vacuum vessel 201, wherein the flange connector 10 has an inner side facing to the vacuum vessel 201 and an outer side facing to an environment of the vacuum vessel 201, a vacuum-tight insulator tube 20 having a longitudinal extension with a first end facing to the flange connector 10 and a second end being adapted for projecting into the vacuum vessel 201, and an electrode device coupled to the second end of the insulator tube 20, wherein the electrode device has a front electrode 31 facing to the vacuum vessel 201 and a cable adapter 32 for receiving a high-voltage cable 214, wherein a flexible tube connector 40 is provided for a vacuum-tight coupling of the insulator tube 20 with the flange connector 10, and a manipulator device 50 is connected with the insulator tube 20 for adjusting a geometrical arrangement of the insulator tube 20 relative to the flange connector 10. Furthermore, an electron diffraction apparatus 200 including the high voltage feedthrough assembly 100 and a method of manipulating an electrode device in a vacuum environment are described.

Abstract translation: 用于在真空环境中提供电位的高压馈通组件100包括适于与真空容器201连接的凸缘连接器10，其中凸缘连接器10具有面向真空容器201的内侧和外侧 面向真空容器201的环境的真空密封绝缘管20具有纵向延伸部，其第一端面向凸缘连接器10，第二端部适于突出到真空容器201中;以及电极装置， 到绝缘体管20的第二端，其中电极装置具有面向真空容器201的前电极31和用于接收高压电缆214的电缆适配器32，其中为真空提供柔性管连接器40 绝缘体管20与凸缘连接器10的一个很好的耦合，并且操纵器装置50与绝缘管20连接，用于调节绝缘体管20的几何排列 e绝缘体管20相对于凸缘连接器10.此外，描述了包括高压馈通组件100的电子衍射装置200以及在真空环境中操作电极装置的方法。

公开(公告)号：EP2662880A3

公开(公告)日：2015-09-09

申请号：EP13165579.7

申请日：2013-04-26

Applicant: Riken ,  Hitachi, Ltd.

Inventor： Tanigaki, Toshiaki ,  Aizawa, Shinji ,  Matsuda, Tsuyoshi ,  Harada, Ken ,  Takahashi, Yoshio

IPC: H01J37/295 ,  H01J37/26

CPC classification number: H01J37/22 ,  H01J37/295 ,  H01J2237/2614

Abstract: An electron beam device includes a first electron biprism between an acceleration tube and irradiation lens systems, and an electron biprism in the image forming lens system. The first electron biprism splits the electron beam into first and second electron beams, radiated to differently positioned first and second regions on objective plane of an objective lens system having a specimen perpendicular to an optical axis. The first and second electron beams are superposed on the observation plane by the electron biprism of the image forming lens system. The superposed region of those electron beams is observed or recorded. Optical action of the irradiation lens system controls each current density of the first and second electron beams on the objective plane of the objective lens system having the specimen, and distance on electron optics between first electron biprism and the objective plane of the objective lens system having the specimen.

公开(公告)号：EP2899744A1

公开(公告)日：2015-07-29

申请号：EP14152568.3

申请日：2014-01-24

Applicant: Carl Zeiss Microscopy GmbH

Inventor： Pavia, Giuseppe

IPC: H01J37/26 ,  H01J37/295 ,  H01J37/305

CPC classification number: H01J37/28 ,  H01J37/20 ,  H01J37/295 ,  H01J37/3056 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/20221 ,  H01J2237/20285 ,  H01J2237/31745

Abstract: The present invention relates to a method for preparing and analyzing an object (16, 36) comprising a region of interest to be analyzed. The method comprises removing material from a first surface of the object (16) using a second particle beam and monitoring the first surface of the object (16) using a first particle beam and using a second detector, wherein a second surface of the object (16) is generated when the material is removed from the first surface of the object (16), removing material from the second surface of the object (16) using the second particle beam and monitoring the step of removing the material from the object (16) using the first particle beam and using the second detector, wherein the step of removing the material generates a first side (39) of the region of interest and a second side of the region of interest (33), wherein the region of interest (33) to be analyzed is arranged between the first side (39) and the second side (40), guiding the first particle beam to the first side (39) of the region of interest, detecting first charged particles of the first particle beam being transmitted through the region of interest using a first detector (EBSD detector 1000), generating detection signals using the detected first charged particles and acquiring at least one Kikuchi diffraction pattern of the region of interest, and analyzing the region of interest using the diffraction pattern

Abstract translation: 本发明涉及一种用于制备和物体（16，36）的分析包含感兴趣的区域进行分析。 所述方法包括从使用第二粒子束所述对象（16）的第一表面移除材料和监视使用第一粒子束所述对象（16）的第一表面以及使用第二检测器，worin所述对象的第二表面（ 16）时产生的材料被从所述对象（16）的第一表面移除，从使用所述第二粒子束和监督从物体移除材料的步骤的对象（16）的第二表面移除材料（16 ）使用第一粒子束以及使用所述第二检测器，worin去除材料基因速率的感兴趣区域和感兴趣（33的区域的第二侧）的第一侧（39）worin的感兴趣区域的步骤（ 33）将待分析的第一侧面（39）和第二侧（40）之间设置，引导所述第一粒子束到所述感兴趣区域的所述第一侧（39），检测第一带电第一粒子束存在的颗粒 反式mitted通过 使用第一检测器（检测器EBSD 1000），使用所述检测到的第一带电粒子和获取的感兴趣区域的至少一个菊池衍射图案生成检测信号，并且使用所述衍射图案分析的感兴趣区域中的感兴趣区域

公开(公告)号：EP2315232A2

公开(公告)日：2011-04-27

申请号：EP10007999.5

申请日：2010-07-30

Applicant: Hitachi, Ltd.

Inventor： Harada, Ken ,  Sugawara, Akira

IPC: H01J37/295

CPC classification number: H01J37/28 ,  H01J37/295 ,  H01J2237/1514 ,  H01J2237/2611 ,  H01J2237/2614

Abstract: A first electron biprism is disposed in a condenser optical system and an observation region of a specimen is irradiated simultaneously with two electron beams of different angles. The two electron beams that have simultaneously transmitted the specimen are spatially separated and focused with a second electron biprism disposed in an imaging optical system and two electron microscopic images of different irradiation angles are obtained. The two picture images are obtained by a detecting unit. Based on the two picture images, a stereoscopic image or two images having different kinds of information of the specimen is/are produced and displayed on a display device.

Abstract translation: 第一电子双棱镜设置在聚光镜系统中，并且与两个不同角度的电子束同时照射样本的观察区域。 同时透射样品的两个电子束在空间上分离并且与设置在成像光学系统中的第二电子双棱镜聚焦，并且获得不同照射角度的两个电子显微镜图像。 两个图像由检测单元获得。 基于两张图像，生成具有不同种类的样本的立体图像或两张图像，并将其显示在显示装置上。

公开(公告)号：EP1665321A1

公开(公告)日：2006-06-07

申请号：EP03750478.4

申请日：2003-09-02

Applicant: Nanomegas SPRL

Inventor： SERGEEVICH, Avilov Anatoly ,  VLADIMIROVICH, Kuligin Kirill ,  NICOLOPOULOS, Stavros

IPC: H01J37/295

CPC classification number: H01J37/295 ,  G01N23/20058

Abstract: The present invention relates to a device and method which enable a transmission electron microscope to measure very precisely electron diffraction patterns of a sample, said patterns suitable for structure determination therefrom, wherein the electron beam is precessed by means of deflector coils (6) in the transmission electron microscope before the sample (4), in combination with a similar precession of the electron diffraction pattern by means of deflector coils (9) situated after the sample. The electron diffraction pattern is scanned by means of deflector coils (9) situated after the sample.