Abstract:
An inorganic filler according to an embodiment of the present invention includes a boron nitride agglomerate and a coating layer formed on the boron nitride agglomerate and including a —Si—R—NH2 group, and R is selected from the group consisting of an alkyl group having 1 to 3 carbon atoms, an alkene group having 2 to 3 carbon atoms, and an alkyne group having 2 to 3 carbon atoms.
Abstract:
An inorganic filler according to an embodiment of the present invention includes a boron nitride agglomerate and a coating layer formed on the boron nitride agglomerate and including a —Si—R—NH2 group, and R is selected from the group consisting of an alkyl group having 1 to 3 carbon atoms, an alkene group having 2 to 3 carbon atoms, and an alkyne group having 2 to 3 carbon atoms.
Abstract:
An anisotropic conductive film includes a base board and an insulation adhesive layer coated on a side surface of the base board. The insulation adhesive layer includes a plurality of conductive particles dispersed in the insulation adhesive layer. Each of the plurality of conductive particles includes a spherical base portion, a conductive film formed on the spherical base portion, and an insulation layer with ceramic materials formed on the conductive film. The insulation layer defines a plurality of holes, thus the insulation layer is porous, the insulation layer is capable of being partly exposed from the plurality of holes when the plurality of conductive particles is pressed. A method for manufacturing the anisotropic conductive film is also provided.
Abstract:
A semiconductor device is a resin package structure including a semiconductor element T1 molded with a first resin 6. The first resin 6 contains a filler 7 including an electrical insulating capsule enclosed with a phase-change-material that absorbs ambient heat and phase-changes so as to increase a dielectric-strength. The effect of the filler 7 achieves a structure with satisfactory heat dissipation and a high withstand voltage.
Abstract:
Provided is a metal base circuit board having a new function of a light reflection in addition to the conventional printed circuit board function for mounting electronic parts. The metal base circuit board has a circuit arranged on a metal plate via an insulation layer. A white film is arranged at least one the insulation layer.
Abstract:
A semiconductor device is a resin package structure including a semiconductor element T1 molded with a first resin 6. The first resin 6 contains a filler 7 including an electrical insulating capsule enclosed with a phase-change-material that absorbs ambient heat and phase-changes so as to increase a dielectric-strength. The effect of the filler 7 achieves a structure with satisfactory heat dissipation and a high withstand voltage.
Abstract:
A semiconductor device is a resin package structure including a semiconductor element T1 molded with a first resin 6. The first resin 6 contains a filler 7 including an electrical insulating capsule enclosed with a phase-change-material that absorbs ambient heat and phase-changes so as to increase a dielectric-strength. The effect of the filler 7 achieves a structure with satisfactory heat dissipation and a high withstand voltage.
Abstract:
Provided is a metal base circuit board having a new function of a light reflection in addition to the conventional printed circuit board function for mounting electronic parts. The metal base circuit board has a circuit arranged on a metal plate via an insulation layer. A white film is arranged at least one the insulation layer.