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公开(公告)号：KR1020150097322A
公开(公告)日：2015-08-26
申请号：KR1020140018699
申请日：2014-02-18
Applicant: 삼성전자주식회사
IPC: H01L33/00
CPC classification number: H01L33/24 , H01L33/0079 , H01L33/08 , H01L33/145 , H01L33/38 , H01L33/62 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: 본 발명의 일 실시 예는, 나노구조 반도체 제1 도전형 반도체로 이루어진 베이스층, 상기 제1 도전형 반도체 베이스층 상에 배치되며, 상기 제1 도전형 반도체 베이스층이 노출된 복수의 개구부를 가지는 마스크층, 상기 복수의 개구부 상에 배치되며, 각각 제1 도전형 반도체로 이루어진 나노 코어, 활성층 및 제2 도전형 반도체층을 포함하는 복수의 나노 발광구조물들 및 적어도 일부가 상기 제2 도전형 반도체층 아래에 위치하도록 상기 마스크층 상에 배치되는 다결정성 전류억제층을 포함하는 나노구조 반도체 발광소자를 제공한다.
Abstract translation: 本发明的实施例提供一种纳米结构半导体发光器件，其包括：由第一导电型半导体构成的基极层; 掩模层，其设置在所述第一导电型半导体基底层上，并且具有多个开口部，所述第一导电型半导体基底层暴露于所述多个开口部; 多个纳米发光结构，设置在开口部分上，并且分别包括由第一导电类型半导体，有源层和第二导电类型半导体层制成的纳米孔; 以及多个电流限制层，其设置在掩模层上，使得其至少一部分可以位于第二导电类型半导体层下方。
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公开(公告)号：KR1020140099803A
公开(公告)日：2014-08-13
申请号：KR1020130013113
申请日：2013-02-05
Applicant: 삼성전자주식회사
CPC classification number: H01L33/24 , H01L31/0232 , H01L2224/48137 , H01L2924/181 , H01L2924/1815 , H01L2924/00012
Abstract: The present invention relates to a semiconductor light emitting device that includes a first conductive semiconductor base layer formed on a substrate; an insulation film which is formed on the first conductive semiconductor base layer and has a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of light emitting nanostructures which include a first conductive semiconductor core formed on an area where the first conductive semiconductor base layer is exposed, an active layer and a second conductive semiconductor layer which are formed on the surface of the first conductive semiconductor core in order. A lower corner of a side of the light emitting nanostructure is located at a side wall of the opening of the insulation film.
Abstract translation: 本发明涉及一种半导体发光器件，其包括在基板上形成的第一导电半导体基底层; 绝缘膜，其形成在所述第一导电半导体基底层上并且具有多个开口，所述第一导电半导体基底层暴露于所述多个开口; 以及多个发光纳米结构，其包括形成在第一导电半导体基底层露出的区域上的第一导电半导体芯，形成在第一导电半导体芯的表面上的有源层和第二导电半导体层， 订购。 发光纳米结构的一侧的下角位于绝缘膜的开口的侧壁上。
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公开(公告)号：KR101269053B1
公开(公告)日：2013-06-04
申请号：KR1020110116471
申请日：2011-11-09
Applicant: 삼성전자주식회사
CPC classification number: H01L33/24 , B82Y20/00 , B82Y40/00 , H01L33/08 , H01L33/18 , H01L33/387 , Y10S977/932
Abstract: 나노 로드 발광 소자 및 그 제조 방법이 개시된다.
개시된 나노 로드 발광 소자는 적어도 하나의 질화물 반도체층과, 상기 적어도 하나의 질화물 반도체층 상에 구비된 것으로, 관통홀들을 포함하는 마스크층과, 광이 발광되는 복수 개의 발광 나노 로드와, 상기 복수 개의 발광 나노 로드를 그루핑하고, 그루핑된 발광 나노 로드들을 서로 이격되게 도전체로 덮은 나노 로드 클러스터들을 포함할 수 있다.-
公开(公告)号：KR1020130024052A
公开(公告)日：2013-03-08
申请号：KR1020110087248
申请日：2011-08-30
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
CPC classification number: H01L33/04 , H01L33/22 , H01L2924/12041
Abstract: PURPOSE: A semiconductor light emitting device is provided to extend a light emission area by forming an active layer on a core part. CONSTITUTION: A core part(500) is formed on a first conductivity type semiconductor layer(300). An active layer(600) surrounds the core part. The active layer has three crystalline planes which have different wavelengths according to the voltage. A second conductive semiconductor layer(700) is formed on the active layer.
Abstract translation: 目的：提供半导体发光器件，通过在芯部上形成有源层来延伸发光区域。 构成：在第一导电型半导体层（300）上形成芯部（500）。 活性层（600）包围核心部分。 有源层具有根据电压具有不同波长的三个晶面。 在有源层上形成第二导电半导体层（700）。
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公开(公告)号：KR1020120029279A
公开(公告)日：2012-03-26
申请号：KR1020100091275
申请日：2010-09-16
Applicant: 삼성전자주식회사
Abstract: PURPOSE: A nitride mono-crystal and a method for manufacturing a nitride compound semiconductor light emitting device are provided to minimize the generation of defects of a light emitting structure by separating the light emitting structure from a nitride mono-crystal substrate for growth. CONSTITUTION: A nitride mono-crystal substrate(110) for growth is prepared. A graphene layer(120) is formed in the substrate. A light emitting structure in which a first conductivity type nitride semiconductor layer, an active layer, and a second conductive type nitride semiconductor layer are successively formed is grown up on the graphene layer. A first electrode layer is formed on the light emitting structure. The graphene layer is chemically eliminated by using etchant in order to separate the light emitting structure from the substrate.
Abstract translation: 目的：提供一种氮化物单晶和一种制造氮化物化合物半导体发光器件的方法，用于通过将发光结构与用于生长的氮化物单晶衬底分离来最小化发光结构的缺陷的产生。 构成：制备用于生长的氮化物单晶衬底（110）。 在衬底中形成石墨烯层（120）。 在石墨烯层上生长连续形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层的发光结构。 在发光结构上形成第一电极层。 通过使用蚀刻剂来化学地除去石墨烯层，以将发光结构与基底分离。
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Patent Agency Ranking
公开(公告)号：KR1020120028104A
公开(公告)日：2012-03-22
申请号：KR1020100090117
申请日：2010-09-14
Applicant: 삼성전자주식회사
CPC classification number: H01L33/04 , H01L27/156 , H01L33/08 , H01L33/16 , H01L33/24 , Y10S977/816
Abstract: PURPOSE: A III family nitride nano rod light emitting device and a manufacturing method thereof are provided to grow a III family nitride nano rod light emitting device of a different diameter on the same substrate, thereby realizing light of various wavelengths. CONSTITUTION: An insulating film(120) is formed on a substrate. The insulating film exposes a portion of the substrate. The insulating film includes a plurality of openings of different diameters. A first conductive III family nitride nano rod(160) has a different diameter. The first conductive III family nitride nano rod is formed on each opening. An active layer and a second conductive semiconductor layer(162) are successively formed on a surface of each first conductive III family nitride nano rod.
Abstract translation: 目的：提供III族氮化纳米棒发光器件及其制造方法，以在相同的衬底上生长不同直径的III族氮化纳米棒发光器件，从而实现各种波长的光。 构成：在基板上形成绝缘膜（120）。 绝缘膜暴露基板的一部分。 绝缘膜包括多个不同直径的开口。 第一导电III族氮化物纳米棒（160）具有不同的直径。 在每个开口上形成第一导电III族氮化物纳米棒。 在每个第一导电III族氮化物纳米棒的表面上依次形成有源层和第二导电半导体层（162）。
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公开(公告)号：KR1020110132162A
公开(公告)日：2011-12-07
申请号：KR1020100052019
申请日：2010-06-01
Applicant: 삼성전자주식회사
CPC classification number: H01L33/08 , H01L33/0008 , H01L33/42 , H01L33/50 , H01L2924/12041
Abstract: PURPOSE: A semiconductor light emitting device is provided to include a plurality of light emitting parts emitting light with different wavelengths in a single chip, thereby enabling the semiconductor light emitting device to emit white light without a phosphor. CONSTITUTION: A first light emitting structure(120) is arranged on a substrate(110). The first light emitting structure comprises a first n-type semiconductor layer(121), a first p-type semiconductor layer(123), and a first active layer(122). A second light emitting structure(130) is arranged on the first light emitting structure. The second light emitting structure comprises a second n-type semiconductor layer(131), a nano rod(131'), a second active layer(132), and a second p-type semiconductor layer(133). The second active layer is arranged in order to cover the upper surface and side surface of the nano rod.
Abstract translation: 目的：提供一种半导体发光器件，其包括在单个芯片中发射具有不同波长的光的多个发光部件，从而使半导体发光器件能够发射不含荧光体的白光。 构成：第一发光结构（120）布置在基板（110）上。 第一发光结构包括第一n型半导体层（121），第一p型半导体层（123）和第一有源层（122）。 第二发光结构（130）布置在第一发光结构上。 第二发光结构包括第二n型半导体层（131），纳米棒（131'），第二有源层（132）和第二p型半导体层（133）。 布置第二活性层以覆盖纳米棒的上表面和侧表面。
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公开(公告)号：KR1020160039753A
公开(公告)日：2016-04-12
申请号：KR1020140132545
申请日：2014-10-01
Applicant: 삼성전자주식회사
IPC: H01L33/20
CPC classification number: H01L33/005 , H01L33/06 , H01L33/08 , H01L33/145 , H01L33/24
Abstract: 본발명의일 실시예는, 제1 도전형질화물반도체로이루어진베이스층을마련하는단계와, 상기베이스층상에서로이격되도록제1 도전형질화물반도체로이루어진나노코어를형성하는단계와, 상기나노코어의표면상에활성층과제1 도전형질화물반도체층을갖는쉘을형성하는단계를포함하며, 상기쉘층을형성하는단계중 적어도일부구간에서, 막두께균일도가 80% 이상이되도록소스유량, 소스유속, 챔버압력, 성장온도및 성장속도중 적어도하나의공정인자를제어하는단계를포함하며, 여기서, 상기막 두께균일도(%)는상기나노코어의측면상에성장된막의최소두께와최대두께가각각 t(㎚)와 t(㎚)로나타낼때에, (t/t)×100으로정의되는나노구조반도체발광소자제조방법을제공할수 있다.
Abstract translation: 提供一种制造纳米结构半导体发光器件的方法。 根据本发明实施例的制造纳米结构半导体发光器件的方法包括以下步骤：提供由第一导电氮化物半导体材料制成的基极层; 在所述基底层上形成由所述第一导电氮化物半导体材料制成的纳米孔以彼此间隔开; 以及在每个所述纳米孔的表面上形成包括活性层和所述第一导电氮化物半导体层的外壳，其中壳层的至少一部分通过控制源气体的通量的至少一个工艺参数形成， 源气体的流量，室压力，生长温度和生长速率，以使膜厚均匀度为80％以上。 当在每个纳米孔的侧面上生长的膜的最小厚度和最大厚度分别表示为ta（nm）和tb（nm）时，膜厚均匀性（％）被定义为（ta / tb） x 100。
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