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公开(公告)号：KR1019970054493A
公开(公告)日：1997-07-31
申请号：KR1019950047863
申请日：1995-12-08
Applicant: 한국전자통신연구원
IPC: H01L41/107
Abstract: 본 발명은 초 박막의 Mo - C로 된 압 저항체위에 압전막이 형성되고 이 압전막 위에 게이트전극이 형성되어 있는 구조를 갖는 박막 트랜지스터 및 그의 제조방법에 관한 것이다. 본 발명의 박막 트랜지스터는 게이트전극에 인가되는 전압의 세기에 대응하여 발생하는 전기장에 의해 압전막에 발생하는 힘을 이용하여 압 저항체에 압력이 가해져 압 저항체의 저항이 변화되도록 함으로써 트랜지스터의 소오드단자로부터 게이트단자로 흐르는 전류량을 제어하도록 동작한다.
본 발명의 트랜지스터는 종래의 트랜지스터의 제조방법에서와 채널, 소오스 및 드레인영역을 형성하기 위한 마스킹용 패턴 형성공정 및 불순물주입공정 등이 불필요하므로 제조공정이 간단하고 또한 채널에 해당하는 압 저항체를 평면상에 형성할 수 있으므로 3 차원 구조를 갖는 박막 트랜지스터를 제조할 수 있으며 종래의 박막 트랜지스터를 대체할 수 있다.-
公开(公告)号：KR1019970054323A
公开(公告)日：1997-07-31
申请号：KR1019950054535
申请日：1995-12-22
Applicant: 한국전자통신연구원
IPC: H01L29/772
Abstract: 본 발명은 평면 공명관통 트랜지스터에 관한 것으로, 여러개의 가느다란 분리 게이트에 음 전압을 걸었을 때 형성되는 포텐샬 장벽에 의하여 두 부분의 비대칭 0차원 영역을, 즉 두개의 비대칭 양자점을 형성하고 순방향 양단자 전압을 걸었을 때, 두번의 공명관통 형상을 순차적으로 일으키게 하는 것으로, 이 두번의 순차적 공명관통 현상과 세번째 포텐샬 장벽의 높이를 낮게 하므로써, 공명관통 전류를 극대화할 수 있다.
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公开(公告)号：KR101903421B1
公开(公告)日：2018-10-02
申请号：KR1020120073193
申请日：2012-07-05
Applicant: 한국전자통신연구원
IPC: H04S3/00 , G10L19/008
Abstract: 음향입자의속도벡터를사용하여 3차원음장을표현하는장치및 방법이개시된다. 3차원음장표현방법은음향입자의속도벡터와음원값을사용하여전달함수를생성하는단계; 목표속도벡터와표현된속도벡터를사용하여비용함수(cost function)를생성하는단계; 및전달함수를사용하여비용함수를최소화하는스피커신호를생성하는단계를포함할수 있다.
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公开(公告)号：KR1020120119964A
公开(公告)日：2012-11-01
申请号：KR1020110084014
申请日：2011-08-23
Applicant: 한국전자통신연구원
CPC classification number: H04S3/006
Abstract: PURPOSE: A method and apparatus for reproducing a 3 dimensional sound field are provided to improve robustness of the apparatus by evenly distributing energy of source strength. CONSTITUTION: A control region is determined based on a wavelength of an excitation frequency(101). One or more candidate control points are arranged on the control region based on a loud speaker array(102). A non-uniform control point corresponding to a non-uniform loudspeaker is determined from the candidate control points(103). The non-uniform control point to be added to the control point is determined(104). Determination of the non-uniform control point is performed based on an inner product of a target unit vector corresponding to the target control point and a candidate unit vector corresponding to the candidate control point. [Reference numerals] (101) Control region determination; (102) Arrangement of a candidate control point; (103) Determination of a non-uniform control point corresponding to a non-uniform loudspeaker; (104) Determination of adding the non-uniform control point to the control point; (AA) Start; (BB) End
Abstract translation: 目的：提供一种用于再现三维声场的方法和装置，以通过均匀分布源强度的能量来改善装置的鲁棒性。 构成：基于激励频率的波长来确定控制区域（101）。 一个或多个候选控制点基于扬声器阵列（102）布置在控制区域上。 从候选控制点（103）确定对应于不均匀扬声器的不均匀控制点。 确定要添加到控制点的不均匀控制点（104）。 基于与目标控制点对应的目标单位矢量与候选控制点对应的候选单位矢量的内积来执行不均匀控制点的确定。 （附图标记）（101）控制区域确定; （102）候选人控制点的安排; （103）确定对应于不均匀扬声器的不均匀控制点; （104）确定将不均匀控制点添加到控制点; （AA）开始; （BB）结束
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公开(公告)号：KR101141141B1
公开(公告)日：2012-05-02
申请号：KR1020080128859
申请日：2008-12-17
Applicant: 한국전자통신연구원
Abstract: 본 발명은 음향 재생 위치의 변경이 가능한 압전형 스피커 시스템에 관한 것이다.
이를 위하여 본 발명에 따른 압전형 스피커 시스템은, 압전 박판과, 상기 압전 박판의 상부면에 형성되는 복수의 전극패드와, 상기 압전 박판의 하부면에 형성되는 면패드와, 상기 복수의 전극패드 및 상기 면패드가 형성된 상기 압전 박판의 상하부면을 덮는 2개의 프레임과, 상기 복수의 전극패드중 음향 재생에 이용될 하나 이상의 전극패드를 선택하기 위한 스위치를 포함한다.
압전박판, 전극패드, 면전극, 스위치, 음향장치-
Patent Agency Ranking
公开(公告)号：KR1020100070230A
公开(公告)日：2010-06-25
申请号：KR1020080128859
申请日：2008-12-17
Applicant: 한국전자통신연구원
CPC classification number: H04R17/005 , B06B1/06 , G10K9/122 , H01L41/0805 , H04R1/323
Abstract: PURPOSE: A piezoelectric loudspeaker system is provided to vary a sound playing location by including an electrode pad which is selectively operated. CONSTITUTION: A plurality of electrode pads(120) is formed on the upper side of a piezoelectric thin plate(110). A cotton pad is formed on the lower side of the piezoelectric thin plate. Two frames(140, 150) covers the upper side and the lower side of the piezoelectric thin plate. A switch(200) selects one electric pad for playing a sound. The signal wires of the switch are connected to the electrode pads.
Abstract translation: 目的：提供一种压电扬声器系统，通过包括有选择地操作的电极垫来改变声音播放位置。 构成：在压电薄板（110）的上侧形成有多个电极焊盘（120）。 在压电薄板的下侧形成棉垫。 两个框架（140,150）覆盖压电薄板的上侧和下侧。 开关（200）选择一个用于播放声音的电垫。 开关的信号线连接到电极焊盘。
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公开(公告)号：KR1020100063616A
公开(公告)日：2010-06-11
申请号：KR1020090028233
申请日：2009-04-01
CPC classification number: H04S7/302 , H04R1/403 , H04R3/12 , H04R2201/401 , H04R2201/403
Abstract: PURPOSE: A method and a device for controlling the direction sound source of a listening space are provided to achieve maximum acoustics by performing only minimum controlling operation. CONSTITUTION: A listening/non-listening space establishing unit(110) establishes a listening space or a non-listening space according to the position of a listening. The listening/non-listening space establishing unit selects the number and the position of the sound sources to use for outputting acoustics. An acoustic energy calculator(130) calculates the sound energy of the listening space and the non-listening space and the total amount of the sound energy of an acoustic signal inputted to the selected sound source. A sound source vector calculator(150) maximizes the difference in the sound energy of the listening space and the non-listening space. The sound source vector calculator minimizes the total amount of the sound energy of the acoustic signal inputted to the selected sound source. A sound pressure and phase controller(170) controls the sound pressure and the phase of the selected sound source according to the optimal sound source vector.
Abstract translation: 目的：提供一种用于控制收听空间的方向声源的方法和装置，以通过仅执行最小控制操作来实现最大声学。 构成：聆听/非聆听空间建立单元（110）根据聆听的位置建立聆听空间或非收听空间。 收听/非收听空间建立单元选择用于输出声学的声源的数量和位置。 声能计算器（130）计算收听空间和非收听空间的声音能量以及输入到所选声源的声信号的声能总量。 音源矢量计算器（150）使收听空间和非收听空间的声能的差异最大化。 声源矢量计算器将输入到所选声源的声信号的声能的总量最小化。 声压和相位控制器（170）根据最佳声源矢量控制所选声源的声压和相位。
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公开(公告)号：KR100325689B1
公开(公告)日：2002-02-25
申请号：KR1019990054157
申请日：1999-12-01
Applicant: 한국전자통신연구원
IPC: G11C11/404
CPC classification number: B82Y10/00 , G11C2216/08 , H01L29/7888 , Y10S977/937
Abstract: 본발명은상관된단전자관통(Correlated Single Electron Tunneling) 현상을보이는두 개이상의양자점관통접합배열을적절히결합하고, 이때 유도되는전자 - 홀쌍(Electron - Hole Pair)의쿨롱가로막기(Coulomb Blockade) 현상을이용한메모리소자를제공하는데그 목적이있다. 본발명에따르면, 전자 - 홀쌍에의한쿨롱가로막기현상(Coulomb Blockade Phenomena)을이용하고적어도두 개의양자점관통접합배열을포함하는단전자메모리소자에있어서, 상기양자점관통접합배열은각각적어도두개의관통접합으로구성되어있으며, 서로평행하게배치되어전기적으로기설정된결합력보다크게끔결합되어있고, 결합접합면에서전자의이동이일어나지않도록서로멀리떨어져있으며; 상기양자점관통접합배열중 어느하나는전자 - 홀쌍의개수를변화시킬수 있는게이트전압을인가하기위한게이트전극을포함하고, 상기양자점관통접합배열각각은소오스 - 드레인전압을인가할수 있는소오스및 드레인단자를포함하여이루어진것을특징으로하는단전자메모리소자가제공된다.
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公开(公告)号：KR100299664B1
公开(公告)日：2001-10-27
申请号：KR1019970050803
申请日：1997-10-01
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: PURPOSE: A method for manufacturing silicon short electron transistor using a secondary electron approaching effect of electron beam picturing process and silicon oxidation process is provided to easily manufacture a silicon short electron transistor by using a secondary electron approaching effect of an electron beam picturing process to form a smaller quantum fine line than a size of the electron beam and by using a silicon oxidation process to form a tunneling junction. CONSTITUTION: An electron beam resist is coated on a silicon substrate. A gate(20), source(10), a quantum dot(40) and a drain(30) are exposed by the electron beam picturing method, wherein any width of space is placed between the source and the quantum dot and between the drain and the quantum dot. A narrower fine lines(50) than a mean line width of the source and the drain are exposed between the source due to the approaching defect of a secondary electron by performing the picturing of the electron beam, quantum dot and the drain. The fine lines have a narrower waist shape. After coating a silicon oxide layer on the pictured portion, the silicon is etched by using the oxide layer as a mask. The fine line is insulated by performing a silicon thermal oxidation process and an insulated tunneling junction is formed between the source and the quantum dot and between the quantum dot and the drain.
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公开(公告)号：KR1020010053690A
公开(公告)日：2001-07-02
申请号：KR1019990054157
申请日：1999-12-01
Applicant: 한국전자통신연구원
IPC: G11C11/404
CPC classification number: B82Y10/00 , G11C2216/08 , H01L29/7888 , Y10S977/937
Abstract: PURPOSE: A single electron memory device using an electron-hole combination is provided, which combines more than two quantum dot tunnel junction arrays properly showing correlated single electron tunneling phenomenon, and uses a Coulomb blockade phenomenon of an electron-hole pair. CONSTITUTION: According to a parallel-coupled single-electron tunnel-junction array, a quantum dot I1 having dual tunnel junction TL1 and TR1 are connected to a source S1 and a drain D1, and a voltage V+ is applied to S1, and a voltage V- is applied to D1. Another dual tunnel junctions TL2 and TR2 are connected by a quantum dot I2, and the quantum dot I2 is connected to a source S2 and a drain D2, and S2 and D2 are grounded. A junction plane C1 of the quantum dot I1 and I2 is combined strongly and electrically by a capacitance Ca, but the transport of electron through the junction plane is not permitted. A gate electrode G is attached to the quantum dot I2 and a gate voltage Vg is applied to the quantum dot I2. And a capacitance of a junction plane C2 between the quantum dot I2 and the gate electrode G is Cg. Another quantum dot I0 is combined to the quantum dot I1 weakly with a junction plane C0 between them. A source electrode S0 and a drain electrode D0 are attached to the quantum dot I0 by tunnel junctions TL0 and TR0 respectively. The quantum dot I0 is used for measuring a voltage of the quantum dot I1.
Abstract translation: 目的：提供一种使用电子 - 空穴组合的单电子存储器件，其结合了两个以上的量子点隧道结阵列，适当地示出了相关的单电子隧道现象，并且使用电子 - 空穴对的库仑阻塞现象。 构成：根据并联耦合的单电子隧道结阵列，具有双隧道结TL1和TR1的量子点I1连接到源S1和漏极D1，并且将电压V +施加到S1， V-应用于D1。 另一个双隧道结TL2和TR2通过量子点I2连接，量子点I2连接到源S2和漏极D2，S2和D2接地。 量子点I1和I2的结平面C1通过电容Ca强烈地和电连接，但不允许通过结面的电子传输。 栅电极G连接到量子点I2，并且栅极电压Vg施加到量子点I2。 并且量子点I2和栅电极G之间的接面C2的电容为Cg。 另一个量子点I0与它们之间的结平面C0微弱地组合到量子点I1。 源电极S0和漏电极D0分别通过隧道结TL0和TR0连接到量子点I0。 量子点I0用于测量量子点I1的电压。
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