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    CHIP TRANSFERRING METHOD AND THE APPARATUS THEREOF
    42.
    发明申请
    CHIP TRANSFERRING METHOD AND THE APPARATUS THEREOF 审中-公开

    公开(公告)号：US20190229001A1

    公开(公告)日：2019-07-25

    申请号：US16257886

    申请日：2019-01-25

    Applicant: EPISTAR CORPORATION

    Inventor： Min-Hsun HSIEH ,  De-Shan KUO ,  Chang-Lin LEE ,  Jhih-Yong YANG

    IPC: H01L21/677 ,  H01L21/683 ,  H01L33/00

    Abstract: A transferring chips method, including providing a plurality of chips on a first load-bearing structure; dividing the first load-bearing structure into a plurality of blocks, and each of the plurality of blocks including multiple chips of the plurality of chips; measuring a characteristic value of each of the plurality of chips; respectively calculating an average characteristic value of each of the plurality of blocks based on the characteristic values of the multiple chips of each of the plurality of blocks; and transferring the multiple chips of at least two blocks of the plurality of blocks with the average characteristic values within the same range to a second load-bearing structure.

    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF
    43.
    发明申请
    SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THEREOF 审中-公开

    公开(公告)号：US20190109111A1

    公开(公告)日：2019-04-11

    申请号：US16196315

    申请日：2018-11-20

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

    IPC: H01L23/00 ,  H01L33/62 ,  H01L33/30 ,  H01L33/64

    Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad with a first bonding surface positioned away from the stack structure, and a second bonding pad; a carrier comprising a connecting surface; a third bonding pad which comprises a second bonding surface and is arranged on the connecting surface, and a fourth bonding pad arranged on the connecting surface of the carrier; and a conductive connecting layer comprising a first conductive part, comprising a first outer contour, and formed between and directly contacting the first bonding pad and the third bonding pad; a second conductive part formed between the second bonding pad and the fourth bonding pad; and a blocking part covering the first conductive part to form a covering area, wherein the first bonding surface comprises a first position which is the closest to the carrier within the covering area and a second position which is the farthest from the carrier within the covering area in a cross section view, and a distance from the first position to the first out contour is greater than that from the second position to the first outer contour.

    MULTI-DIMENSIONAL LIGHT-EMITTING DEVICE
    46.
    发明申请
    MULTI-DIMENSIONAL LIGHT-EMITTING DEVICE 有权
    多维发光器件

    公开(公告)号：US20150214196A1

    公开(公告)日：2015-07-30

    申请号：US14678668

    申请日：2015-04-03

    Applicant: Epistar Corporation

    Inventor： Chein-Fu SHEN ,  Schang-Jing HON ,  Tsun-Kai KO ,  Alexander Chan WANG ,  Min-Hsun HSIEH ,  Cheng Nan HAN

    IPC: H01L25/075 ,  H01L33/60 ,  H01L33/50

    CPC classification number: H01L25/0753 ,  F21K9/00 ,  F21Y2105/10 ,  F21Y2105/12 ,  F21Y2113/13 ,  F21Y2115/10 ,  H01L33/50 ,  H01L33/505 ,  H01L33/60 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/0002 ,  H01L2924/00014 ,  H01L2924/00

    Abstract: The present application provides a multi-dimensional light-emitting device electrically connected to a power supply system. The multi-dimensional light-emitting device comprises a substrate, a blue light-emitting diode array and one or more phosphor layers. The blue light-emitting diode array, disposed on the substrate, comprises a plurality of blue light-emitting diode chips which are electrically connected. The multi-dimensional light-emitting device comprises a central area and a plurality of peripheral areas, which are arranged around the central area. The phosphor layer covers the central area. When the power supply system provides a high voltage, the central area and the peripheral areas of the multi-dimensional light-emitting device provide a first light and a plurality of second lights, respectively. The first light and the second lights are blended into a mixed light.

    Abstract translation: 本申请提供了电连接到电源系统的多维发光装置。 多维发光装置包括基板，蓝色发光二极管阵列和一个或多个荧光体层。 设置在基板上的蓝色发光二极管阵列包括电连接的多个蓝色发光二极管芯片。 多维发光装置包括围绕中心区域布置的中心区域和多个周边区域。 磷光体层覆盖中心区域。 当电源系统提供高电压时，多维发光装置的中心区域和外围区域分别提供第一光和多个第二光。 第一个光和第二个光被混合成混合光。

    LIGHT-EMITTING DEVICE
    50.
    发明申请
    LIGHT-EMITTING DEVICE 有权
    发光装置

    公开(公告)号：US20140070250A1

    公开(公告)日：2014-03-13

    申请号：US13856220

    申请日：2013-04-03

    Applicant: Epistar Corporation

    Inventor： Shih-I CHEN ,  Tsung-Xian LEE ,  Yi-Ming CHEN ,  Wei-Yu CHEN ,  Ching- Pei LIN ,  Min-Hsun HSIEH ,  Cheng-Nan HAN ,  Tien-Yang WANG ,  Hsing-Chao CHEN ,  Hsin-Mao LIU ,  Zong-Xi CHEN ,  Tzu-Chieh HSU ,  Chien-Fu HUANG ,  Yu-Ren PENG

    IPC: H01L33/50

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

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