公开(公告)号：DE10214885C1

公开(公告)日：2003-11-20

申请号：DE10214885

申请日：2002-04-04

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LINDOLF JUERGEN ,  SUKMAN SIBINA

IPC: G01R31/28 ,  G11C29/02 ,  G01R27/08 ,  H01L21/66 ,  G11C29/00

Abstract: A method for determining resistances at a plurality of interconnected resistors in an integrated circuit and a resistor configuration in which the resistors are interconnected to form a ring structure. Two measurement pads are in each case provided at the nodes between two resistors. The measurement pads can be used for feeding in current and for measuring voltage according to the known four-point measurement method. The effect of the ring structure is that fewer measurement pads are required, in contrast to the customary series circuit of resistors. By way of example, in the case of a ring structure with four resistors, two measurement pads are advantageously saved. The consequently reduced chip area required for the ring structure is advantageous particularly in the case of test circuits, which can be arranged for example in the narrow sawing frame between two chips.

公开(公告)号：DE10043731C2

公开(公告)日：2003-06-26

申请号：DE10043731

申请日：2000-09-05

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KLEHN BERND ,  LINDOLF JUERGEN

IPC: G01R31/26 ,  G01Q70/12 ,  G01R1/06 ,  G01R1/067 ,  G01R1/073 ,  H01L21/66 ,  G01R31/302

Abstract: The measuring probe has a lever arm provided with a probe point at its free end and made of a high conductivity material (14), e.g. doped crystalline silicon, covered by an extremely thin insulation layer (15), e.g. of silicon oxide, with a window (16) in the insulation layer at the apex of the probe point. The lever arm is contacted via a metal layer (17) applied over an opening in the insulation layer. Also included are Independent claims for the following: (a) a manufacturing method for a measuring probe; (b) a measuring system using a measuring probe

公开(公告)号：DE10131675A1

公开(公告)日：2003-01-16

申请号：DE10131675

申请日：2001-06-29

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LINDOLF JUERGEN ,  POPP MARTIN ,  SELL BERNHARD

IPC: G01R27/26 ,  G11C29/50 ,  G11C11/4076

Abstract: A ring oscillator has a multiplicity of inverters. An interconnect is connected between two of the inverters, and a storage capacitor to be measured, with its associated lead resistor, is coupled to the interconnect either via an interconnect or a transistor can selectively coupled and decouple the capacitor and the lead resistance. A measuring device is connected up to the ring oscillator and is used to determine a value for the oscillation frequency of the ring oscillator on the basis of which a value for the time constant of the storage capacitor can be determined.

公开(公告)号：DE10131388A1

公开(公告)日：2003-01-16

申请号：DE10131388

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LE THOAI-THAI ,  LINDOLF JUERGEN

IPC: G11C29/00

Abstract: An integrated dynamic memory includes a memory cell array having memory cells each assigned to one of a plurality of groups. The plurality of groups are divided into defect-free groups having exclusively defect-free memory cells and into defective groups having at least one defective memory cell. The memory further includes a memory configuration table that contains a list of the defect-free groups and an assignment unit that, based upon the entries in the memory configuration table, executes memory accesses only to those memory cells assigned to a defect-free group. The total capacity of the memory module, then, is not fixed once and for all with fabrication, but, rather, results only after a memory test, or may even vary in the course of the module lifetime.

公开(公告)号：DE10030443A1

公开(公告)日：2002-01-17

申请号：DE10030443

申请日：2000-06-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LE THOAI-THAI ,  LINDOLF JUERGEN ,  BRASS ECKHARD ,  KLEHN BERND

IPC: H01L21/306 ,  H01L23/367 ,  H01L23/36

Abstract: Production of a heat deviating surface of a component (1) comprises inserting trenches (3) into the component using an etching process. Preferred Features: The surface of the component is covered with a masking layer (2) in prescribed regions and during etching trenches are etched into the non-covered regions of the surface of the component. An etching solution comprising a 25 vol.% tetramethylammonium hydroxide solution or ethylene diamine or hydrazine is used at 70 deg C. The masking layer is applied to regions of the surface of the component in which the component is divided during the subsequent process steps.

公开(公告)号：DE10026276A1

公开(公告)日：2001-12-13

申请号：DE10026276

申请日：2000-05-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： KAISER ROBERT ,  LINDOLF JUERGEN ,  SCHNEIDER HELMUT ,  SCHAMBERGER FLORIAN ,  SCHAFFROTH THILO

IPC: G11C17/18 ,  G11C16/02 ,  G11C17/16 ,  G11C29/00

Abstract: The explicit high voltage source (1) and internal low voltage source (2) are selectively connected to respective connection areas (4,5) of a programmable fuse (3) by respective connectors (6,7). The switches (8,9) connect the connectors to the connection areas, when a control signal is applied to the switches from a controller (16), to apply required voltage.

公开(公告)号：DE10001129A1

公开(公告)日：2001-07-26

申请号：DE10001129

申请日：2000-01-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： LINDOLF JUERGEN ,  SCHATT STEFANIE

IPC: G01R27/26 ,  G01R31/28 ,  H01L21/66

Abstract: The circuit has a test structure (10) and a reference structure (20). Two series circuits (S1,S2) each contains two transistors (T1,T2;T3,T4) with their controlled paths in series and they are connected in parallel between connections (1,2,8) of a controllable voltage supply (9). A test structure connection is connected to the junction of the transistor sin the first series circuit. A connection for the reference structure is connected to the transistor junction in the second series circuit.