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公开(公告)号:JP2002093172A
公开(公告)日:2002-03-29
申请号:JP2001200241
申请日:2001-06-29
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , LE THOAI-THAI , LINDOLF JUERGEN , SCHNABEL JOACHIM
IPC: G11C11/409 , G11C5/14 , G11C7/06 , G11C7/22 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4074 , H03K19/0175
Abstract: PROBLEM TO BE SOLVED: To supply or introduce control voltage caused by a refresh-current to differential amplifiers functioning as receivers respectively in order to introduce a right operation point. SOLUTION: A receiver circuit, especially, parts arranged in a circuit for switching between a standby mode and an operation mode.
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公开(公告)号:JP2002063800A
公开(公告)日:2002-02-28
申请号:JP2001157851
申请日:2001-05-25
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , SCHAFFROTH THILO , SCHNABEL JOACHIM , SCHNEIDER HELMUT
Abstract: PROBLEM TO BE SOLVED: To provide a method for testing many word lines of a semiconductor memory assembly in a multiple WL wafer test in which a multiple wafer test can be performed quickly without needing much cost. SOLUTION: When an active word line(WL) is in a power-down state, a non-active word line is separated from negative VNWL voltage and made highly resistant immediately before the power-down of the active word line to prevent the rise of the non-active word line having negative voltage.
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公开(公告)号:DE10233526A1
公开(公告)日:2004-02-12
申请号:DE10233526
申请日:2002-07-23
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , OEHM JUERGEN , GREWING CHRISTIAN
Abstract: A band gap reference circuit comprises two current paths (1-5) with a diode (3) in one and a diode (5) and resistance (4) in the other and reading nodes (15,16) and connected differential amplifiers (8-11) fed by a reference current (IREF) adjustable through a resistance (12) against a reference potential (6).
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公开(公告)号:DE10030443A1
公开(公告)日:2002-01-17
申请号:DE10030443
申请日:2000-06-22
Applicant: INFINEON TECHNOLOGIES AG
Inventor: LE THOAI-THAI , LINDOLF JUERGEN , BRASS ECKHARD , KLEHN BERND
IPC: H01L21/306 , H01L23/367 , H01L23/36
Abstract: Production of a heat deviating surface of a component (1) comprises inserting trenches (3) into the component using an etching process. Preferred Features: The surface of the component is covered with a masking layer (2) in prescribed regions and during etching trenches are etched into the non-covered regions of the surface of the component. An etching solution comprising a 25 vol.% tetramethylammonium hydroxide solution or ethylene diamine or hydrazine is used at 70 deg C. The masking layer is applied to regions of the surface of the component in which the component is divided during the subsequent process steps.
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公开(公告)号:DE10032236C2
公开(公告)日:2002-05-16
申请号:DE10032236
申请日:2000-07-03
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , LE THOAI-THAI , LINDOLF JUERGEN , SCHNABEL JOACHIM
IPC: G11C11/409 , G11C5/14 , G11C7/06 , G11C7/22 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4074 , H03K19/0175 , G06F1/32
Abstract: The circuit generates a control voltage derived from a reference current per differential amplifier acting as a receiver to set the correct operating point. Switching elements for each receiver in a line carrying a current for generating the control voltage are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and are closed periodically or at discrete times in standby mode by a refresh signal. The circuit generates a control voltage derived from a reference current (IREF) for each differential amplifier (6,7) functioning as a receiver to set the correct operating point. It has switching elements (10-12) for each receiver in a line (13) carrying a current for generating the control voltage and that are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and that are closed periodically or at discrete times in standby mode by a refresh signal (SRF). Independent claims are also included for the following: a DRAM memory.
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公开(公告)号:DE10032236A1
公开(公告)日:2002-01-31
申请号:DE10032236
申请日:2000-07-03
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , LE THOAI-THAI , LINDOLF JUERGEN , SCHNABEL JOACHIM
IPC: G11C11/409 , G11C5/14 , G11C7/06 , G11C7/22 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4074 , H03K19/0175 , G06F1/32
Abstract: The circuit generates a control voltage derived from a reference current per differential amplifier acting as a receiver to set the correct operating point. Switching elements for each receiver in a line carrying a current for generating the control voltage are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and are closed periodically or at discrete times in standby mode by a refresh signal. The circuit generates a control voltage derived from a reference current (IREF) for each differential amplifier (6,7) functioning as a receiver to set the correct operating point. It has switching elements (10-12) for each receiver in a line (13) carrying a current for generating the control voltage and that are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and that are closed periodically or at discrete times in standby mode by a refresh signal (SRF). Independent claims are also included for the following: a DRAM memory.
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公开(公告)号:DE102004058131A1
公开(公告)日:2006-06-08
申请号:DE102004058131
申请日:2004-12-02
Applicant: INFINEON TECHNOLOGIES AG
Inventor: KLEHN BERND , FISCHER HERMANN , BRASS ECKHARD , SCHUMANN THOMAS , KLEIN RALF
IPC: G11C11/4091 , G11C11/407
Abstract: The method involves closing a control unit (MUX) to connect a sense amplifier (SAM) with a bit line (BL), and activating a word line (WL) to activate a memory cell (M) for selection. The sense amplifier is activated to evaluate information of the bit line, and the control unit is opened to disconnect the bit line by the sense amplifier. The selected information is delivered on a data bus (DAT). An independent claim is also included for a dynamic circuit memory with a selection circuit.
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公开(公告)号:DE50312448D1
公开(公告)日:2010-04-08
申请号:DE50312448
申请日:2003-07-15
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , GREWING CHRISTIAN , OEHM JUERGEN
IPC: G05F3/24 , G05F3/26 , H03F1/30 , H03F3/345 , H03K17/687
Abstract: A band gap reference circuit comprises two current paths (1-5) with a diode (3) in one and a diode (5) and resistance (4) in the other and reading nodes (15,16) and connected differential amplifiers (8-11) fed by a reference current (IREF) adjustable through a resistance (12) against a reference potential (6).
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公开(公告)号:DE112004001552T5
公开(公告)日:2006-10-19
申请号:DE112004001552
申请日:2004-09-08
Applicant: INFINEON TECHNOLOGIES AG
Inventor: ALEXANDER GEORGE WILLIAM , BRASS ECKHARD , KLEIN RALF , LE THOAI-THAI
IPC: G11C11/4076 , G11C7/10
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公开(公告)号:DE50100988D1
公开(公告)日:2003-12-24
申请号:DE50100988
申请日:2001-06-19
Applicant: INFINEON TECHNOLOGIES AG
Inventor: BRASS ECKHARD , LE THOAI-THAI , LINDOLF JUERGEN , SCHNABEL JOACHIM
IPC: G11C11/409 , G11C5/14 , G11C7/06 , G11C7/22 , G11C11/403 , G11C11/406 , G11C11/407 , G11C11/4074 , H03K19/0175
Abstract: The circuit generates a control voltage derived from a reference current per differential amplifier acting as a receiver to set the correct operating point. Switching elements for each receiver in a line carrying a current for generating the control voltage are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and are closed periodically or at discrete times in standby mode by a refresh signal. The circuit generates a control voltage derived from a reference current (IREF) for each differential amplifier (6,7) functioning as a receiver to set the correct operating point. It has switching elements (10-12) for each receiver in a line (13) carrying a current for generating the control voltage and that are permanently closed in working mode by a trigger signal (EN) to continuously deliver the current and that are closed periodically or at discrete times in standby mode by a refresh signal (SRF). Independent claims are also included for the following: a DRAM memory.
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