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    41.
    发明专利
    未知

    公开(公告)号：DE10120674B4

    公开(公告)日：2005-06-16

    申请号：DE10120674

    申请日：2001-04-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEBALD MICHAEL ,  RICHTER ERNST

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20 ,  G03F7/38 ,  G03F7/26

    Abstract: A method for structuring a photoresist layer is described. A substrate has a photoresist layer containing a film-forming polymer that has a photo acid generator that liberates an acid on exposure to light from a defined wavelength range Deltalambda 1 . In addition, the polymer has a photo base generator that liberates a base on exposure to light from a defined wavelength range Deltalambda 2 . The photoresist layer is first exposed in parts to light from the defined wavelength range Deltalambda 1 , the light being chosen so that the photo base generator is substantially inert to the irradiation. The photoresist layer is then exposed to light from the defined wavelength range Deltalambda 2 , the light being chosen so that the photo acid generator is substantially inert to the irradiation. The photoresist layer is then heated at which the cleavage reaction catalyzed by the photolytically produced acid takes place, and finally the photoresist layer is developed.

    Reinforcing a structured photoresist comprises reacting a polymer having iso(thio)cyanate groups with a silicon compound having nucleophilic groups, or vice versa
    44.
    发明专利
    Reinforcing a structured photoresist comprises reacting a polymer having iso(thio)cyanate groups with a silicon compound having nucleophilic groups, or vice versa 未知

    公开(公告)号：DE10153497A1

    公开(公告)日：2003-06-05

    申请号：DE10153497

    申请日：2001-10-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FERBITZ JENS ,  MORMANN WERNER ,  ROTTSTEGGE JOERG ,  HOHLE CHRISTOPH ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

    IPC: G03F7/40

    Abstract: Method for reinforcing a structured photoresist comprising a polymer having anchor groups comprises applying a silicon compound having linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa Method for reinforcing a structured photoresist comprises: (a) coating a substrate with a chemically reinforced photoresist comprising (i) a film-forming polymer having acid-labile groups that are cleaved with acid to form optionally protected anchor groups and groups that increase the solubility of the polymer in aqueous alkaline developers, (ii) a photochemical acid precursor and (iii) a solvent; (b) drying the resist to form a film; (c) structuring the film; (d) deprotecting the anchor groups if necessary; (e) applying a reinforcing agent comprising one or more silicon-containing groups and one or more linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa, so that the anchor and linker groups react to form covalent bonds; and (f) removing excess reinforcing agent.

    A chemically strengthened resist useful for semiconductor microchips comprises a film forming polymer
    46.
    发明专利
    A chemically strengthened resist useful for semiconductor microchips comprises a film forming polymer 未知

    公开(公告)号：DE10131670A1

    公开(公告)日：2003-01-16

    申请号：DE10131670

    申请日：2001-06-29

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： ROTTSTEGGE JOERG ,  ESCHBAUMER CHRISTIAN ,  HOHLE CHRISTOPH ,  HERBST WALTRAUD ,  SEBALD MICHAEL

    IPC: G03F7/004 ,  G03F7/039 ,  G03F7/075 ,  G03F7/40 ,  G03F7/38

    Abstract: A chemically strengthened resist comprises a film forming polymer, a photoacid and a solvent. The polymer comprises acid labile groups, free groups to make the polymer more soluble in aqueous alkalis, and primary polymer structural units derived from primary monomers, substituted by fluorine(s) and an anchor group for binding a strengthening agent, which optionally comprises a protecting group. An Independent claim is included for post-strengthening of resist structures comprising the steps: (1) application of the resist to a substrate; (2) drying of the resist; (3) exposure of the dried resist to give a resist having a latent image; (4) heating of the exposed resist to a first temperature at which the latent image is converted to a chemical profile and polymer polar groups are released; (5) development of the resist with an aqueous alkaline developer, where the chemical profile region which contains the polymer polar groups is dissolved from the substrate, and a structured resist is obtained; (6) optionally freeing of the anchor groups from the protected anchor groups; (7) application of a strengthening agent to the structured resist; and (8) washing off excess strengthening agent.

    49.
    发明专利
    未知

    公开(公告)号：DE10120673B4

    公开(公告)日：2007-01-25

    申请号：DE10120673

    申请日：2001-04-27

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SEBALD MICHAEL ,  RICHTER ERNST

    IPC: G03F7/26 ,  G03F7/004 ,  G03F7/039 ,  G03F7/095 ,  G03F7/38

    Abstract: A method for structuring a photoresist layer includes the steps of providing a substrate on which a photoresist layer has been applied at least in some areas. The photoresist layer includes a film-forming polymer that contains molecule groups that can be converted into alkali-soluble groups by acid-catalyzed elimination reactions. The polymer further includes a photobase generator that, on exposure to light from a defined wavelength range, releases a base. The polymer additionally includes a thermoacid generator that releases an acid when the temperature is raised. The photoresist layer is initially exposed, in some areas, to light from the defined wavelength range. The photoresist layer is then heated to a temperature at which the thermoacid generator releases an acid and the acid-catalyzed elimination reaction takes place. Finally, the photoresist layer is developed.

    50.
    发明专利
    未知

    公开(公告)号：DE10153497B4

    公开(公告)日：2006-04-06

    申请号：DE10153497

    申请日：2001-10-31

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： FERBITZ JENS ,  MORMANN WERNER ,  ROTTSTEGGE JOERG ,  HOHLE CHRISTOPH ,  ESCHBAUMER CHRISTIAN ,  SEBALD MICHAEL

    IPC: G03F7/40

    Abstract: Method for reinforcing a structured photoresist comprising a polymer having anchor groups comprises applying a silicon compound having linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa Method for reinforcing a structured photoresist comprises: (a) coating a substrate with a chemically reinforced photoresist comprising (i) a film-forming polymer having acid-labile groups that are cleaved with acid to form optionally protected anchor groups and groups that increase the solubility of the polymer in aqueous alkaline developers, (ii) a photochemical acid precursor and (iii) a solvent; (b) drying the resist to form a film; (c) structuring the film; (d) deprotecting the anchor groups if necessary; (e) applying a reinforcing agent comprising one or more silicon-containing groups and one or more linker groups, where the anchor groups are iso(thio)cyanate groups and the linker groups are nucleophilic groups, or vice versa, so that the anchor and linker groups react to form covalent bonds; and (f) removing excess reinforcing agent.

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