公开(公告)号：DE10131237A1

公开(公告)日：2003-01-23

申请号：DE10131237

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  RICHTER FRANK ,  POPP MARTIN ,  WICH-GLASEN ANDREAS

IPC: H01L29/78 ,  H01L21/336 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/06

Abstract: The invention relates to a transistor that advantageously uses a portion of the surface, which is provided in conventional transistors for insulating the transistors. This enables the enlargement of the channel width to self-adjust without the risk of short-circuits. The inventive field effect transistor is advantageous in that a distinct increase in the channel width that is active for the forward current ION can, compared to conventional transistor structures used up to now, be guaranteed without having to accept a decrease in the attainable integration density. This permits, for example, the forward current ION to increase by 50 % without having to modify the arrangement of the active regions or of the trench insulation.

公开(公告)号：DE10131276A1

公开(公告)日：2003-01-16

申请号：DE10131276

申请日：2001-06-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  RICHTER FRANK ,  POPP MARTIN ,  WICH-GLASEN ANDREAS

IPC: H01L29/423 ,  H01L21/336 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786

Abstract: The invention relates to a field effect transistor in which the planar channel region on the upper surface of the elevation is extended in width by means of additional vertical channel regions on the lateral surfaces of the elevation. Said additional vertical channel regions connect directly to the planar channel region (vertical extended channel regions). Said field effect transistor has the advantage that a significant increase in the effective channel width for the current flow ION can be guaranteed relative to conventional transistor structures used up until the present, without having to accept a reduction in the achievable integration density. Said field effect transistor furthermore has a low reverse current IOFF. The above advantages are achieved without the thickness of the gate insulators up to the region of the charge transfer tunnels having to be reduced or a reduced stability.

公开(公告)号：DE19941147A1

公开(公告)日：2001-03-22

申请号：DE19941147

申请日：1999-08-30

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TEMMLER DIETMAR ,  BENZINGER HERBERT ,  KARCHER WOLFRAM ,  PUSCH CATHARINA ,  SCHREMS MARTIN ,  FAUL JUERGEN

IPC: H01L21/20 ,  H01L21/8242 ,  H01L27/108

Abstract: Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region; and partially removing the epitaxial layer. Production of an epitaxial layer comprises: preparing substrate (105) having a single crystalline region (107) and an electrically insulated region (108); growing epitaxial layer (245) on the single crystalline region, in which the electrically insulated region is partially grown laterally by the epitaxial layer and forms an epitaxial closing joint (275); and partially removing the epitaxial layer above the electrically insulated region so that the epitaxial closing joint is partially removed. Preferred Features: The epitaxial layer is removed by anisotropic etching. The single crystalline region consists of silicon and the electrically insulated region consists of silicon oxide.