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公开(公告)号：US20230234837A1
公开(公告)日：2023-07-27
申请号：US18156181
申请日：2023-01-18
Applicant: SKYWORKS GLOBAL PTE. LTD.
Inventor： Guofeng Chen , Yu Hui , Myeong Gweon Gu , Jae Hyung Lee , Jaemyoung Jhung
CPC classification number: B81C1/00158 , B81B3/0021 , B81C2201/0105 , B81C2201/0132 , B81C2201/0181 , B81C2203/0118 , B81B2201/0257 , B81B2203/0353 , B81B2203/0307 , B81B2203/04 , B81B2203/0315 , B81B2203/0127
Abstract: A method for manufacturing a microelectromechanical systems microphone comprises depositing a membrane on a first sacrificial layer on a substrate, releasing the membrane by removing the first sacrificial layer, depositing a resist layer on the membrane, and patterning the resist layer to expose the membrane, such that at least one section of resist layer remains at at least one edge of the membrane to form an anchor. A microphone manufactured by this method is also provided. There is also provided a method for manufacturing a microelectromechanical systems microphone comprising depositing a membrane on a first sacrificial layer deposited on a substrate, releasing the membrane by removing at least the first sacrificial layer, depositing a resist layer on membrane, patterning the resist layer to expose an edge of the membrane, and forming an anchor at the exposed edge of the membrane. A microphone manufactured by this method is also provided.
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公开(公告)号：US11708262B2
公开(公告)日：2023-07-25
申请号：US17687230
申请日：2022-03-04
Inventor： Yi-Hsien Chang , Chun-Ren Cheng , Wei-Cheng Shen , Wen-Chien Chen
CPC classification number: B81B3/0072 , B81B3/0013 , B81C1/00476 , B81C1/00666 , B81C1/00968 , B81C1/00984 , B81B2201/0257 , B81B2207/012 , B81C2201/0105 , B81C2201/017 , B81C2201/0109 , B81C2201/0128 , B81C2201/0147 , B81C2201/0163 , B81C2201/053 , B81C2203/0792 , H04R2201/003
Abstract: A method of manufacturing a semiconductor structure includes following operations. A first substrate is provided. A plate is formed over the first substrate. The plate includes a first tensile member, a second tensile member, a semiconductive member between the first tensile member and the second tensile member, and a plurality of apertures penetrating the first tensile member, the semiconductive member and the second tensile member. A membrane is formed over and separated from the plate. The membrane include a plurality of holes. A plurality of conductive plugs passing through the plate or membrane are formed. A plurality of semiconductive pads are formed over the plurality of conductive plugs. The plate is bonded to a second substrate. The second substrate includes a plurality of bond pads, and the semiconductive pads are in contact with the bond pads.
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43.发明申请公开(公告)号：US20180170748A1
公开(公告)日：2018-06-21
申请号：US15899785
申请日：2018-02-20
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Siddharth Chakravarty , Rakesh Kumar , Pradeep Yelehanka
CPC classification number: B81C1/00293 , B81B7/0074 , B81B2203/0315 , B81C2201/0105 , B81C2201/0132 , B81C2201/0133 , B81C2203/0136
Abstract: Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes providing a substrate terminating at an uppermost surface and forming a sacrificial structure over the uppermost substrate of the substrate. The method includes forming a device structure overlying a lower portion of the sacrificial structure, overlying the uppermost surface of the substrate, and underlying an upper portion of the sacrificial structure. The method also includes depositing a permeable layer over the sacrificial structure, the device structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity, wherein the cavity has an outer surface completely bounded by the substrate, the device structure, and the permeable layer.
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44.发明申请公开(公告)号：US20170197822A1
公开(公告)日：2017-07-13
申请号：US15469393
申请日：2017-03-24
Inventor： Emmanuel P. Quevy , Jeremy R. Hui , Carrie Wing-Zin Low
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.
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45.发明申请公开(公告)号：US20170174507A1
公开(公告)日：2017-06-22
申请号：US14973319
申请日：2015-12-17
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Siddharth Chakravarty , Rakesh Kumar , Pradeep Yelehanka
CPC classification number: B81C1/00293 , B81B7/0074 , B81B2203/0315 , B81C2201/0105 , B81C2201/0132 , B81C2201/0133 , B81C2203/0136
Abstract: Semiconductor devices with enclosed cavities and methods for fabricating semiconductor devices with enclosed cavities are provided. In an embodiment, a method for fabricating a semiconductor device with a cavity includes forming a sacrificial structure in and/or over a substrate. The method includes depositing a permeable layer over the sacrificial structure and the substrate. Further, the method includes etching the sacrificial structure through the permeable layer to form the cavity bounded by the substrate and the permeable layer.
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Patent Agency Ranking
46.发明授权公开(公告)号：US09637371B2
公开(公告)日：2017-05-02
申请号：US14532675
申请日：2014-11-04
Inventor： Emmanuel P Quevy , Jeremy R. Hui , Carrie Wing-Zin Low
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Membrane transducer structures and thin-film encapsulation methods for manufacturing the same are provided. In one example, the thin film encapsulation methods may be implemented to co-integrate processes for thin-film encapsulation and formation of microelectronic devices and microelectromechanical systems (MEMS) that include the membrane transducers.
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47.发明授权Trapped sacrificial structures and methods of manufacturing same using thin-film encapsulation 有权捕获的牺牲结构和使用薄膜封装制造相同的方法公开(公告)号：US09422149B2
公开(公告)日：2016-08-23
申请号：US14532723
申请日：2014-11-04
Inventor： Emmanuel P. Quevy , Louis Nervegna , Jeremy R. Hui
CPC classification number: B81C1/00246 , B81B3/0021 , B81B7/007 , B81B7/0077 , B81B7/008 , B81B2201/0214 , B81B2201/0235 , B81B2201/0264 , B81B2203/0127 , B81B2203/0315 , B81C1/00158 , B81C1/00269 , B81C1/00285 , B81C1/00333 , B81C1/0038 , B81C2201/0105 , B81C2201/056 , B81C2203/0118 , B81C2203/0136 , B81C2203/0172 , B81C2203/019 , B81C2203/0735 , G01N27/223 , G01N27/227
Abstract: Trapped sacrificial structures and thin-film encapsulation methods that may be implemented to manufacture trapped sacrificial structures such as relative humidity sensor structures, and spacer structures that protect adjacent semiconductor structures extending above a semiconductor die substrate from being contacted by a molding tool or other semiconductor processing tool in an area of a die substrate adjacent the spacer structures.
Abstract translation: 捕获的牺牲结构和薄膜封装方法可用于制造捕获的牺牲结构，例如相对湿度传感器结构，以及保护在半导体管芯基板之上延伸的相邻半导体结构不被模具或其它半导体加工件接触的间隔结构 工具在与衬垫结构相邻的管芯衬底的区域中。
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公开(公告)号：US09364807B2
公开(公告)日：2016-06-14
申请号：US13635972
申请日：2011-03-10
Applicant: Christian Schoen , Michael Wagner
Inventor： Christian Schoen , Michael Wagner
CPC classification number: B01J4/001 , B01L3/502707 , B01L3/502738 , B01L3/502746 , B01L2200/0621 , B01L2200/10 , B01L2300/0636 , B01L2300/0681 , B01L2300/0816 , B01L2300/0822 , B01L2300/0864 , B01L2300/0887 , B01L2300/161 , B01L2400/0406 , B01L2400/0688 , B01L2400/088 , B81C1/00047 , B81C1/00063 , B81C2201/0105 , B81C2201/0143 , B81C2201/0156 , Y10T137/85938
Abstract: The invention relates to a component (4) of a biosensor, comprising at least one first device (6) for receiving a sample liquid, wherein the device (6) is connected via a distributor channel (7) to further receiving devices (8 to 11), into each of which a feed channel (71, 72, 73, 74) branching off from the distributor channel (7) opens, and the feed channels (71, 72, 73, 74) are arranged in succession in flow direction (S) of the sample liquid passed on through the distributor channel (7). In accordance with the invention, it is envisaged that, in the distributor channel (7), in each case between two immediately successive feed channels (71, 72; 72, 73; 73, 74) in flow direction (S), at least one region (K) for at least temporary slowing or stoppage of the capillary flow of the sample liquid has been inserted. It is thus possible to control the capillary flow of the sample liquid such that always only one receiving device (8, 9, 10, 11) is filled with the volume flow of sample liquid available before the next is filled, and effectively simultaneous filling of the receiving devices (8, 9, 10, 11) is prevented. This leads to rapid and complete filling of the respective receiving device (8, 9, 10, 11). Additionally presented is a process with which the regions (K) can be inserted into the distributor channel (7) in a simple manner.
Abstract translation: 本发明涉及生物传感器的组件（4），其包括用于接收样品液体的至少一个第一装置（6），其中所述装置（6）经由分配器通道（7）连接到另外的接收装置（8至 其中，从分配器通道（7）分支出的进料通道（71,72,73,74）打开，并且进料通道（71,72,73,74）在流动方向上连续地排列 （S）通过分配器通道（7）通过的样品液体。 根据本发明，设想在分配器通道（7）中，在每种情况下，在流动方向（S）处的两个紧邻的供给通道（71,72; 72,73; 73,74）之间至少 已经插入了用于至少暂时放慢或停止样品液体的毛细管流动的区域（K）。 因此，可以控制样品液体的毛细管流动，使得总是只有一个接收装置（8,9,10,11）填充下一个填充之前可用的样品液体的体积流量，并且有效地同时填充 接收装置（8,9,10,11）被防止。 这导致相应的接收装置（8,9,10,11）的快速和完全的填充。 另外提出了一种可以简单地将区域（K）插入到分配器通道（7）中的过程。
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公开(公告)号：US20240343557A1
公开(公告)日：2024-10-17
申请号：US18614036
申请日：2024-03-22
Applicant: Robert Bosch GmbH
Inventor： Jochen Reinmuth , Christoph Schelling , Thomas Buck
CPC classification number: B81B3/007 , B81C1/00158 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/0163 , B81B2203/0315 , B81B2203/0361 , B81B2203/04 , B81C2201/0105 , B81C2201/056
Abstract: A micromechanical diaphragm system including a first diaphragm and a second diaphragm and spacer elements which are arranged between the first diaphragm and the second diaphragm. At least one spacer element has a first supporting element and a second supporting element. The first supporting element faces the first diaphragm. The second supporting element faces the second diaphragm. The first supporting element and the second supporting element are connected via a spring element.
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公开(公告)号：US20240336474A1
公开(公告)日：2024-10-10
申请号：US18298311
申请日：2023-04-10
Applicant: AAC Technologies Pte. Ltd.
Inventor： Houming Chong , Veronica Tan , Zaixiang Pua , Kahkeen Lai , Zhan Zhan
IPC: B81B3/00 , B81C1/00 , G01C19/5733 , G01C19/5769
CPC classification number: B81B3/0037 , B81C1/00166 , G01C19/5733 , G01C19/5769 , B81B2201/0242 , B81B2203/0136 , B81B2203/04 , B81C2201/0105 , B81C2201/0132 , B81C2203/0109
Abstract: A MEMS device and a method for manufacturing the MEMS device are provided. The MEMS device includes a cap sheet and a device sheet. The device sheet includes a silicon substrate, at least two device structure layers, and at least one conductive structure layer, and each two adjacent device structure layers are coupled via a corresponding conductive structure layer. The device sheet defines a functional cavity having a first region, a second region, and a third region. The at least two device structure layers and the at least one conductive structure layer each are across the first region, the second region, and the third region, and the at least two device structure layers and the at least one conductive structure layer cooperatively form a first movable structure in the first region, define an anchor point in the second region, and form a second movable structure in the third region.
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