公开(公告)号：EP0746013A3

公开(公告)日：1999-10-27

申请号：EP96108733.5

申请日：1996-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wallace, Robert M. ,  Douglas, Monte A.

IPC: H01L21/306 ,  G02B26/08

CPC classification number: B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  B81C2201/112 ,  B81C2201/117 ,  G02B26/0841

Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

公开(公告)号：NO20054579A

公开(公告)日：2005-10-05

申请号：NO20054579

申请日：2005-10-05

Applicant: VTI TECHNOLOGIES OY

Inventor： KUISMA HEIKKI ,  LAHDENPERA JUHA ,  MUTIKAINEN RISTO

IPC: G01P15/08 ,  B81B3/00 ,  B81C1/00 ,  G01P15/125 ,  B81B7/00

CPC classification number: G01P15/125 ,  B81B3/0013 ,  B81B2201/0235 ,  B81C1/0096 ,  B81C2201/112 ,  G01P15/08 ,  G01P15/0802

公开(公告)号：EP2746217B1

公开(公告)日：2016-10-12

申请号：EP13196313.4

申请日：2013-12-09

Applicant: Freescale Semiconductor, Inc.

Inventor： Montez, Ruben B. ,  Steimle, Robert F.

IPC: B81C1/00

CPC classification number: B81B3/0005 ,  B81B2201/0221 ,  B81B2201/0235 ,  B81B2203/0181 ,  B81B2203/06 ,  B81C1/0038 ,  B81C1/00952 ,  B81C2201/0169 ,  B81C2201/112 ,  G01P15/0802 ,  G01P2015/0871 ,  G01P2015/0874

公开(公告)号：EP1381523A4

公开(公告)日：2006-09-06

申请号：EP01975475

申请日：2001-09-25

Applicant: CALIFORNIA INST OF TECHN

Inventor： TAI YU CHONG ,  YAO TZE-JUNG ,  YANG XING

IPC: B81B3/00 ,  B81C1/00 ,  B44C1/22 ,  A61B19/00 ,  B41J2/04 ,  H01L21/00

CPC classification number: B81B3/001 ,  B81C2201/112

Abstract: An anti stiction structure for cantilever formation technique. In one embodiment, the cantilever (130) includes downwardly extending plurality of legs (131 and 132) which preventing the substrate (100) from sticking to the cantilever. In another embodiment, the polymer cantilever (215) is prevented from sticking to the substrate (200) by at amortized stick layer (205) on the substrate and during the formation of the cantilever, the stick layer is removed later as a sacrificial layer.

公开(公告)号：EP1640315A2

公开(公告)日：2006-03-29

申请号：EP05255681.8

申请日：2005-09-14

Applicant: IDC, LLC

Inventor： Sampsell, Jeffrey B.

IPC: B81B3/00 ,  G02B26/08

CPC classification number: B81C1/00944 ,  B81B2201/047 ,  B81C2201/112 ,  B82Y30/00 ,  G02B26/001

Abstract: In various embodiments of the invention, a regenerating protective coating is formed on at least one surface of an interior cavity of a MEMS device 80. Particular embodiments provide a regenerating protective coating 170 on one or more mirror surfaces of an interferometric light modulation device, also known as an iMoD in some embodiments. The protective coating can be regenerated through the addition of heat or energy to the protective coating.

Abstract translation: 在本发明的各种实施例中，再生保护涂层形成在MEMS装置80的内腔的至少一个表面上。具体实施例在干涉式光调制装置的一个或多个镜面上提供再生保护涂层170，也 在一些实施例中称为iMoD。 保护涂层可以通过加热或能量再生到保护涂层上。

公开(公告)号：EP0646246B1

公开(公告)日：1997-03-26

申请号：EP93911119.1

申请日：1993-05-06

Applicant: ANALOG DEVICES, INCORPORATED

Inventor： TSANG, Robert, W., K. ,  CORE, Theresa, A. ,  SHERMAN, Steven, J. ,  BROKAW, A., Paul

IPC: G01P15/08

CPC classification number: B81B3/001 ,  B81C1/00246 ,  B81C2201/014 ,  B81C2201/053 ,  B81C2201/112 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/131 ,  G01P2015/0814

Abstract: The invention comprises a method for fabricating a monolithic chip containing integrated circuitry as well as a suspended polysilicon microstructure. The inventive method comprises 67 processes which are further broken down into approximately 330 steps. The processes and their arrangement allow for compatible fabrication of transistor circuitry and the suspended polysilicon microstructure on the same chip.

公开(公告)号：EP0746013A2

公开(公告)日：1996-12-04

申请号：EP96108733.5

申请日：1996-05-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Wallace, Robert M. ,  Douglas, Monte A.

IPC: H01L21/306 ,  G02B26/08

CPC classification number: B81C1/0096 ,  B08B7/00 ,  B08B7/0021 ,  B81B3/0005 ,  B81C1/00857 ,  B81C2201/112 ,  B81C2201/117 ,  G02B26/0841

Abstract: A method of cleaning and treating a device, including those of the micromechanical (10) and semiconductor type. The surface of a device, such as the landing electrode (22) of a digital micromirror device (10), is first cleaned with a supercritical fluid (SCF) in a chamber (50) to remove soluble chemical compounds, and then maintained in the SCF chamber until and during the subsequent passivation step. Passivants including PFDA and PFPE are suitable for the present invention. By maintaining the device in the SCF chamber, and without exposing the device to, for instance, the ambient of a clean room, organic and inorganic contaminants cannot be deposited upon the cleaned surface prior to the passivation step. The present invention derives technical advantages by providing an improved passivated surface that is suited to extend the useful operation life of devices, including those of the micromechanical type, reducing stiction forces between contacting elements such as a mirror and its landing electrode. The present invention is also suitable for cleaning and passivating other surfaces including a surface of semiconductor wafers, and the surface of a hard disk memory drive.

Abstract translation: 一种清洁和处理包括微机械（10）和半导体类型的装置的方法。 首先在腔室（50）中用超临界流体（SCF）清洁诸如数字微镜装置（10）的着陆电极（22）的装置的表面以除去可溶性化合物，然后保持在 SCF室直到和在随后的钝化步骤期间。 包括PFDA和PFPE的钝化剂适用于本发明。 通过将装置保持在SCF室中，并且不将装置暴露于例如洁净室的环境中，在钝化步骤之前，有机和无机污染物不能沉积在清洁的表面上。 本发明通过提供一种改进的钝化表面来提供技术优点，该钝化表面适于延长包括微机械型的装置的有用使用寿命，从而降低诸如反射镜和其着陆电极的接触元件之间的静摩擦力。 本发明还适用于清洁和钝化包括半导体晶片的表面的其它表面以及硬盘存储器驱动器的表面。

公开(公告)号：EP0615147A1

公开(公告)日：1994-09-14

申请号：EP93103749.3

申请日：1993-03-09

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hornbeck, Larry J.

IPC: G02B26/08 ,  C23C16/44

CPC classification number: B81B3/0005 ,  B81C2201/112 ,  B82Y10/00 ,  B82Y30/00 ,  G02B26/0841

Abstract: It is possible to use an oriented monolayer to limit the Van der Waals forces between two elements by passivation. The invention disclosed here details how to do so by building the device to be passivated (22), cleaning the surface to be passivated (24), activating the surface (26), heating it along with the material to be used as the monolayer (78), exposing a vapor of the material (30) to the surface and evacuating the excess material (32), leaving only the monolayer.

Abstract translation: 可以使用取向的单层通过钝化来限制两个元件之间的范德华力。 这里公开的发明详细说明如何通过构建要钝化的装置（22），清洁要钝化的表面（24），激活表面（26），将其与用作单层的材料一起加热（22） 78），将材料（30）的蒸气暴露于表面并抽空多余的材料（32），仅留下单层。

公开(公告)号：WO2014209951A1

公开(公告)日：2014-12-31

申请号：PCT/US2014/043789

申请日：2014-06-24

Applicant: ANALOG DEVICES, INC.

Inventor： CHEN, Li ,  NUNAN, Thomas Kieran ,  YANG, Kuang L.

IPC: B81B3/00

CPC classification number: B81B3/0051 ,  B81B3/0005 ,  B81B3/0059 ,  B81B2207/012 ,  B81C1/00976 ,  B81C2201/112 ,  B81C2203/0118

Abstract: One or more stopper features (e.g., bump structures) are formed in a standard ASIC wafer top passivation layer for preventing MEMS device stiction vertically in integrated devices having a MEMS device capped directly by an ASIC wafer. A TiN coating may be used on the stopper feature(s) for anti-stiction. An electrical potential may be applied to the TiN anti-stiction coating of one or more stopper features.

Abstract translation: 在标准ASIC晶片顶部钝化层中形成一个或多个塞子特征（例如，凸起结构），用于在具有由ASIC晶片直接覆盖的MEMS器件的集成器件中垂直地防止MEMS器件静电。 TiN涂层可用于阻塞特征以用于抗静电。 可以将电势施加到一个或多个塞子特征的TiN抗静电涂层。

公开(公告)号：WO2011034972A3

公开(公告)日：2011-05-12

申请号：PCT/US2010048997

申请日：2010-09-15

Applicant: QUALCOMM MEMS TECHNOLOGIES INC ,  KOTHARI MANISH ,  GUDLAVALLETI SAURI ,  ZEE STEPHEN

Inventor： KOTHARI MANISH ,  GUDLAVALLETI SAURI ,  ZEE STEPHEN

IPC: G02B26/00 ,  B81B3/00 ,  G02B26/08

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/112 ,  B81C2201/115 ,  G02B26/001 ,  G02B26/0841

Abstract: In certain embodiments, a device is provided including a substrate (102) and a plurality of supports (104) over the substrate. The device further includes a mechanical layer (106) having a movable portion and a stationary portion. The stationary portion being disposed over the supports. The device further includes a reflective surface (108) positioned over the substrate and mechanically coupled to the movable portion (112). The device of certain embodiments further includes at least one movable stop element (110) displaced from and mechanically coupled to the movable portion. In certain embodiments, the at least a portion of the stop element may be positioned over the stationary portion.

Abstract translation: 在某些实施例中，提供了一种装置，其包括衬底（102）和在衬底上的多个支撑件（104）。 该装置还包括具有可移动部分和固定部分的机械层（106）。 固定部分设置在支撑件上。 该装置还包括位于衬底上并机械地联接到可动部分（112）的反射表面（108）。 某些实施例的装置还包括从可移动部分移位并机械联接到可移动部分的至少一个可移动止动元件（110）。 在某些实施例中，止动元件的至少一部分可以定位在固定部分上方。