公开(公告)号：KR1020050005726A

公开(公告)日：2005-01-14

申请号：KR1020030098232

申请日：2003-12-27

Applicant: 삼성전자주식회사

Inventor： 김경석 ,  박홍배 ,  김봉현 ,  김성태 ,  권종완 ,  이정현 ,  김기철 ,  임재순 ,  남갑진 ,  김영선

IPC: H01L21/205

CPC classification number: H01L21/0228 ,  C23C16/308 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31645

Abstract: PURPOSE: A method of forming a high dielectric layer using an atomic layer deposition method and a method of manufacturing a capacitor having the high dielectric layer are provided to improve leakage current characteristics by reducing defects in the high dielectric layer. CONSTITUTION: A precursor including metal elements is supplied and a purging process is performed. An oxidizing agent is supplied and a purging process is performed. A reaction source including a nitrogen element is supplied and a purging process is performed. The precursor including metal elements is formed with an Hf precursor and a high dielectric layer is formed with an HfON layer.

Abstract translation: 目的：提供使用原子层沉积法形成高介电层的方法和制造具有高介电层的电容器的方法，以通过减少高介电层中的缺陷来改善泄漏电流特性。 构成：提供包含金属元素的前体并进行清洗处理。 供给氧化剂，进行清洗处理。 供给包括氮元素的反应源，进行清洗处理。 包含金属元素的前体由Hf前体形成，并且用HfON层形成高介电层。

公开(公告)号：KR1020040104003A

公开(公告)日：2004-12-10

申请号：KR1020030035347

申请日：2003-06-02

Applicant: 삼성전자주식회사

Inventor： 권종완 ,  김성태 ,  김영선 ,  남갑진 ,  임재순 ,  김기철 ,  최한메

IPC: H01L21/205

Abstract: PURPOSE: An atomic layer deposition system and a method of vaporizing an atomic layer deposition source are provided to prevent the decomposition of the liquefied source generated from a process for heating the liquefied source and acquire stably high-density source without altering the atomic layer deposition system. CONSTITUTION: A transport gas tube(100) is used for transporting a gas. A source container(200) is used for storing a liquefied source including a deposition element and includes a sprayer for spraying the liquefied source. An intermediate gas tube(300) is used for transferring the sprayed source from the source container. A heating container(400) is used for storing the sprayed source and heating the sprayed source. A source gas tube(500) is used for transferring the heated source. A deposition chamber(600) is used for depositing the heated source.

Abstract translation: 目的：提供原子层沉积系统和蒸发原子层沉积源的方法，以防止由液化源加热产生的液化源的分解并获得稳定的高密度源而不改变原子层沉积系统 。 构成：运输气体管（100）用于输送气体。 源容器（200）用于存储包括沉积元件的液化源，并且包括用于喷射液化源的喷雾器。 中间气体管（300）用于从源容器转移喷射源。 加热容器（400）用于储存喷射源并加热喷射源。 源气体管（500）用于传送加热的源。 沉积室（600）用于沉积加热的源。

公开(公告)号：KR1020040036019A

公开(公告)日：2004-04-30

申请号：KR1020020064771

申请日：2002-10-23

Applicant: 삼성전자주식회사

Inventor： 김성태 ,  김영선 ,  남갑진 ,  김완돈 ,  임재순 ,  김기철

IPC: H01L21/8242

Abstract: PURPOSE: A semiconductor device having a cylinder type storage node is provided to be capable of minimizing the deformation of the storage node due to a post heat treatment. CONSTITUTION: A semiconductor device has a cylinder type storage node(47), wherein the storage node is made of a polysilicon layer(43) and a metal containing layer(45). Preferably, the metal containing layer is made of precious metal or metal nitride. The lower portion of the cylinder type storage node is supported by a supporter layer(21) and an etch stop layer(31) formed on the supporter layer. Preferably, a surface oxidation barrier is formed between the cylinder type storage node and a dielectric layer. Preferably, the surface oxidation barrier is made of one selected from a group consisting of the first silicon nitride layer deposited by an ALD(Atomic Layer Deposition) method, the second silicon nitride layer deposited by an RTN(Rapid Thermal Nitridation) method, or an oxide aluminum layer.

Abstract translation: 目的：提供一种具有圆筒型存储节点的半导体器件，以能够使由后热处理引起的存储节点的变形最小化。 构成：半导体器件具有圆柱形存储节点（47），其中存储节点由多晶硅层（43）和含金属层（45）制成。 优选地，含金属层由贵金属或金属氮化物制成。 圆筒型存储节点的下部由支撑层（21）和形成在支撑层上的蚀刻停止层（31）支撑。 优选地，在圆柱型存储节点和电介质层之间形成表面氧化屏障。 优选地，表面氧化屏障由选自由ALD（原子层沉积）方法沉积的第一氮化硅层，通过RTN（快速热氮化）法沉积的第二氮化硅层，或 氧化铝层。

公开(公告)号：KR1020030015000A

公开(公告)日：2003-02-20

申请号：KR1020010049036

申请日：2001-08-14

Applicant: 삼성전자주식회사

Inventor： 임재순 ,  이승환 ,  최한메 ,  이윤정 ,  남갑진 ,  박기연 ,  김영선 ,  김성태

IPC: H01L27/04

CPC classification number: H01L28/55

Abstract: PURPOSE: A method of forming a capacitor of a semiconductor device for improving a characteristic of a leakage current on a boundary between a dielectric layer and an upper electrode are provided to improve the characteristic of a leakage current by restraining an unstable state of the boundary between the dielectric layer and the upper electrode. CONSTITUTION: A bottom electrode is formed on a semiconductor substrate(110). At this time, an interlayer dielectric is arranged between the semiconductor substrate and the bottom electrode. A rapid thermal nitridation process is performed(120). A bugger layer is formed between the interlayer dielectric and the bottom electrode. A dielectric layer is formed on the buffer layer(130). A top electrode is formed on the bottom electrode(140). The first thermal process is performed under temperature of 200 to 250 degrees centigrade by using O2 gas or N2O gas or O3 gas(150). The second thermal process is performed under vacuum atmosphere(160).

Abstract translation: 目的：提供一种形成用于提高电介质层和上电极之间的边界上的漏电流特性的半导体器件的电容器的方法，以通过抑制漏电流的不稳定状态来改善漏电流的特性 电介质层和上电极。 构成：在半导体衬底（110）上形成底部电极。 此时，在半导体衬底和底部电极之间设置层间电介质。 进行快速热氮化处理（120）。 在层间电介质和底部电极之间形成虫洞层。 在缓冲层（130）上形成介电层。 顶部电极形成在底部电极（140）上。 第一次热处理通过使用O 2气体或N 2 O气体或O 3气体（150）在200至250摄氏度的温度下进行。 第二热处理在真空气氛（160）下进行。

公开(公告)号：KR100269315B1

公开(公告)日：2000-11-01

申请号：KR1019970062439

申请日：1997-11-24

Applicant: 삼성전자주식회사

Inventor： 김경훈 ,  박영욱 ,  남갑진 ,  원석준 ,  윤덕수 ,  곽선우

IPC: H01L21/26

CPC classification number: C23C16/45561 ,  C23C16/45557 ,  C23C16/481 ,  H01L21/28556 ,  H01L21/314 ,  Y10S438/907

Abstract: PURPOSE: A method for manufacturing semiconductor devices is provided to increase the throughput per unit time by reducing a temperature stabilization time of a wafer when semiconductor devices are manufactured using a sheet type equipment. CONSTITUTION: A method for manufacturing semiconductor devices stabilizes a wafer loaded to a chamber and performs a given process for the stabilized wafer. In order to increase the throughput of wafers per unit time by reducing the time consumed in the process stabilization step, the chamber pressure in the process stabilization step is maintained to be higher that in the process implementation step for a given hour.

Abstract translation: 目的：提供一种制造半导体器件的方法，以通过在使用片式设备制造半导体器件时降低晶片的温度稳定时间来增加每单位时间的吞吐量。 构成：制造半导体器件的方法使加载到腔室中的晶片稳定，并为稳定的晶片执行给定的工艺。 为了通过减少在过程稳定步骤中消耗的时间来增加每单位时间的晶片的生产量，过程稳定步骤中的腔室压力被保持为高于给定时间的过程实施步骤。

公开(公告)号：KR100269332B1

公开(公告)日：2000-10-16

申请号：KR1019980027317

申请日：1998-07-07

Applicant: 삼성전자주식회사

Inventor： 남갑진 ,  남상돈 ,  원석준 ,  형용우

IPC: H01L27/04

Abstract: 상부전극과 하부전극사이에 다층 유전막이 형성되어 있되, 그 중간층에 비정질층이 형성되어 있는 반도체 장치의 커패시터 및 그 제조방법이 개시되어 있다. 다층 유전막의 중간에 상기 비정질층이 형성되어 있어, 상기 비정질층 상에 형성된 유전막에 보이드와 같은 결함이 형성되더라도, 이러한 결함이 상기 비정질층 아래에 형성된 유전막 및 하부전극에 까지 퍼지는 것을 방지할 수 있다. 따라서, 커패시터의 유전막 누설전류 특성이 개선될 수 있고, 반도체 장치가 오동작되는 것이 방지될 수 있다.

公开(公告)号：KR100258979B1

公开(公告)日：2000-06-15

申请号：KR1019970038931

申请日：1997-08-14

Applicant: 삼성전자주식회사

Inventor： 원석준 ,  남갑진 ,  박영욱

IPC: H01L29/12

CPC classification number: H01L28/55 ,  H01L21/3105 ,  H01L21/31691

Abstract: PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to reduce the trap density between an electrode of the capacitor and a dielectric layer by heat-treating the dielectric layer in a hydrogen atmosphere. CONSTITUTION: A lower electrode is formed on a semiconductor substrate(10). A dielectric layer is formed on the lower electrode(12). Then, the dielectric layer is heat-treated in a hydrogen atmosphere(14). After that, an upper electrode is formed on the dielectric layer(18). When the dielectric layer is heat-treated in the hydrogen atmosphere, H2 gas or H2 plasma is supplied. The heat treatment process is carried out in the temperature of 300 to 600°C for 5 to 60 minutes. The lower electrode is comprised of any one selected from the group consisting of polysilicon, metal, metal silicide and metal nitride.

Abstract translation: 目的：提供一种用于制造半导体器件的电容器的方法，以通过在氢气氛中对介电层进行热处理来减小电容器的电极和电介质层之间的陷阱密度。 构成：在半导体衬底（10）上形成下电极。 在下电极（12）上形成电介质层。 然后，在氢气氛中对介电层进行热处理（14）。 之后，在电介质层（18）上形成上电极。 当在氢气氛中对介电层进行热处理时，供给H 2气体或H 2等离子体。 热处理工序在300〜600℃的温度下进行5〜60分钟。 下电极由选自多晶硅，金属，金属硅化物和金属氮化物的任意一种组成。

公开(公告)号：KR1020000000566A

公开(公告)日：2000-01-15

申请号：KR1019980020240

申请日：1998-06-01

Applicant: 삼성전자주식회사

Inventor： 박병률 ,  이명범 ,  문광진 ,  남갑진

IPC: H01L21/8242

Abstract: PURPOSE: A method is to form a capacitor by using a hemispherical grain silicon layer to improve the characteristics of a memory cell. CONSTITUTION: A method is to form a hemispherical grain silicon layer(19) having grains of different size on the surface of a bottom electrode pattern(18) by forming the bottom electrode pattern comprising a crystalline layer(15) and an amorphous layer on a semiconductor substrate. The method minimizes the reduction of the surface area of the bottom electrode and prevents neighboring bottom electrodes from being connected.

Abstract translation: 目的：一种方法是通过使用半球形晶粒硅层来形成电容器，以改善存储单元的特性。 构成：一种方法是通过在底部电极图案（18）的表面上形成包含结晶层（15）和非晶层的底部电极图案来形成具有不同尺寸晶粒的半球状晶粒硅层（19） 半导体衬底。 该方法使底部电极的表面积的减小最小化并防止相邻的底部电极连接。

公开(公告)号：KR1019990081297A

公开(公告)日：1999-11-15

申请号：KR1019980015146

申请日：1998-04-28

Applicant: 삼성전자주식회사

Inventor： 김영선 ,  이상협 ,  남갑진

IPC: H01L27/108

Abstract: 반도체 장치의 커패시터(capacitor) 형성 방법을 개시한다. 본 발명의 일 관점은 하부 전극 상에 유전막을 형성한다. 유전막 상에 반응 방지막 및 금속 실리사이드막(metal silicide layer) 등으로 이루어지는 상부 전극을 형성한다. 상부 전극 상에 패터닝 보호막을 형성한다. 패터닝 보호막 및 상부 전극을 패터닝한다. 패터닝 보호막은 폴리 실리콘막(poly silicon layer) 등과 같은 도전 물질로 이루어진다.

公开(公告)号：KR1019990041785A

公开(公告)日：1999-06-15

申请号：KR1019970062439

申请日：1997-11-24

Applicant: 삼성전자주식회사

Inventor： 김경훈 ,  박영욱 ,  남갑진 ,  원석준 ,  윤덕수 ,  곽선우

IPC: H01L21/26

Abstract: 램프가열 방식의 매엽식 장비를 이용하는 반도체장치의 제조방법에 대해 개시되어 있다. 이 방법은, 웨이퍼를 챔버내로 로딩하는 단계와, 챔버의 압력과 웨이퍼의 온도를 공정압력 및 공정온도보다 높게 상승시키는 단계와, 챔버의 압력 및 웨이퍼의 온도를 공정압력 및 공정온도로 하강시키는 단계와, 웨이퍼를 이용하여 소정의 공정을 진행하는 단계, 및 챔버의 진공을 해제하고 챔버 및 가스 주입관에 잔류하는 가스를 정화시키는 단계를 구비하여 이루어진다.