Abstract:
본 발명은 듀얼밴드 파워증폭기 모듈에 관한 것으로서, 칩인덕터와 칩 커패시터들 그리고 RFC를 세라믹 기판을 사용해 3차원적으로 적층 및 형성함으로써 모듈전체의 크기를 줄이도록 하는데, 이를 위해 상호간에 일정거리만큼 이격되도록 제1주파수대역의 파워증폭용MMIC와 제2주파수대역의 파워증폭용MMIC가 실장되는 각각의 위치에 소정의 전극패턴이 형성되며, 해당 주파수대역의 파워증폭용MMIC 각각의 양측에 입력매칭부와 출력매칭부의 소자기준전극패턴이 형성된 최상부레이어부;상기 최상부레이어부의 하부에, 상기 입력매칭부와 출력매칭부의 소자기준전극패턴과 대응되는 소정의 전극패턴이, 형성된 레이어를 원하는 값에 따라 다수개 적층 및 연결하여 형성한, 입/출력매칭레이어부;상기 입/출력매칭레이어부의 하부에 DC바이어스 인가용 RFC( Radio Frequency Choke)스트립 패턴이 형성된 레이어를 다수개 적층 및 연결하여 형성한, RFC 레이어부;상기 RFC레이어부의 하부에 상기 스트립 패턴과 연동하여 DC 바이어스 회로를 구성하는 소정의 바이패스 커패시터 패턴이 형성된 레이어를 다수개 적층 및 연결하여 형성한, 바이패스 레이어부;상기 바이패스 레이어부의 하부에 외부의 입/출력포트와 인터페이스하도록 소정의 전극패턴이 형성된 인터페이스 레이어부를 포함하여 이루어지도록 한다.
Abstract:
PURPOSE: A VCO(Voltage Controlled Oscillator) of a dual band mobile terminal is provided to minimize a module so as to have a smaller size than an existing switching device by fabricating the module three-dimensionally. CONSTITUTION: A stack board(200) is formed as a plurality of dielectric boards each with a certain electrode pattern printed thereon are disposed and stacked in a vertical direction according to each stacking type unit element and the circuit disposition pattern of two individual VCOs. Surface-mounted unit elements(301-307) are surface-mounted on the electric pattern of the uppermost dielectric board of the stack board(200). Conductor pads(401-411) are formed from a portion of the side of the uppermost dielectric board to the lowermost dielectric board of the stack board(200) in a vertical direction and electrically connect the stack board(200) and the surface-mounted unit elements(301-307) mutually or connect them with outside.
Abstract:
PURPOSE: A stacking switch module used for a dual-band mobile communication terminal is provided to form switching-related unit elements in 3-dimensional structure by stacking and integrating ceramic sheets, thereby reducing a chip part cost and a mounting cost. CONSTITUTION: A switching stack substrate(200) is formed with switching unit elements for switching the first and second communication frequencies having different dual bands and patterns of the switching unit elements, by ceramic sheets which are disposed and stacked in vertical direction while being electrically united together. Surface mounting unit elements(301-308) are mounted on an upper side of the switching stack substrate(200). Conductor walls(401-412) are formed in vertical direction at certain spots on 4 sides of the switching stack substrate(200), and electrically connect the switching unit elements with the surface mounting unit elements(301-308) or with the exterior.
Abstract:
본 고안은, 듀얼밴드 이동통신단말기용 고주파 스위치 모듈에 관한 것으로서, 인덕터나, 커패시터 등의 스위칭 관련 단위 소자들이 PCB기판에 칩 부품 형태로 실장되는 종래의 2차원적인 구조와는 달리, 인덕터, 커패시터 등의 스위칭 관련 단위 소자들을 세라믹 시트(sheet)를 적층하고 일체화시켜 3차원적인 구조로 형성함으로써, 종래와 같이 칩부품을 사용하지 않아도 되어 칩부품 비용과 그 실장 비용을 절감할 수 있고, 3차원적으로 모듈을 제조할 수 있어 그 크기를 종래의 스위칭 소자보다 최소화할 수 있게 된다.
Abstract:
PURPOSE: An RF(Radio Frequency) element built-in substrate of MCM(Multi-Chip Module)-C is provided to reduce the number of fabrication processes of the MCM-C by fabricating the MCM-C with active elements and manual elements such as an FET, a transistor, and a diode. CONSTITUTION: A resistance(11) and a capacitor(15) are formed on a ceramic substrate including manual elements. A conductive line(30) is arranged in an inside of the ceramic substrate. Active elements such as a transistor(21) are formed on an upper portion of the ceramic substrate including manual elements. A capacitor and pad pattern(15a) is used as a pad of the active elements and a capacitor(15) mounted in the ceramic substrate. The capacitor and pad pattern(15a) is exposed on an upper surface of the capacitor(15). The transistor(21) is located on the capacitor and pad pattern(15a).
Abstract:
PURPOSE: A device for calibrating stack elements, a method for manufacturing the same and a method for measuring a high frequency characteristics by using the same are provided to eliminate the effect of a via hole and accurately measure a high frequency characteristic by making the structure which is similar to an object to be measured. CONSTITUTION: A device(300) for calibrating stack elements includes an impedance pattern layer located at the same height of an incorporated device to be measured and printed thereon an impedance pattern(310) to performing the calibration of the incorporated device, a via hole layer stacked on the impedance pattern layer and having the same height of a via hole(320) of the incorporated device and a plurality of conductive pads(330) stacked on the via hole layer and connected to the impedance pattern(310) through the via hole(320), wherein the device(300) is calibrated to the impedance pattern(310) corresponding to the position of the incorporated device by contacting a measurement device to perform the calibration at the conductive pads(330).
Abstract:
PURPOSE: An RF(Radio Frequency) element built-in substrate of MCM(Multi-Chip Module)-C is provided to reduce the number of fabrication processes of the MCM-C by fabricating the MCM-C with active elements and manual elements such as an FET, a transistor, and a diode. CONSTITUTION: A resistance(11) and a capacitor(15) are formed on a ceramic substrate including manual elements. A conductive line(30) is arranged in an inside of the ceramic substrate. Active elements such as a transistor(21) are formed on an upper portion of the ceramic substrate including manual elements. A capacitor and pad pattern(15a) is used as a pad of the active elements and a capacitor(15) mounted in the ceramic substrate. The capacitor and pad pattern(15a) is exposed on an upper surface of the capacitor(15). The transistor(21) is located on the capacitor and pad pattern(15a).
Abstract:
PURPOSE: A stacked ferrite inductor and method for manufacturing the same is provided to easily estimate an inductance value by changing turns of coil, while maintaining cross section occupied by the coil constant. CONSTITUTION: A stacked ferrite inductor comprises a first ferrite sheet unit having a plurality of first ferrite sheets(51,53,56,58) having via holes(512,532,562) connected to electrode patterns(511,531,561,581); a second ferrite sheet unit having a plurality of second ferrite sheets(52,54,55,57) having via holes(522,542,552,572), wherein the second ferrite sheets having no electrode patterns are inserted between first ferrite sheets; a conductive paste filling the via holes of first and second ferrite sheets so as to interconnect the electrode patterns; and a third ferrite sheet unit having a plurality of third ferrite sheets(1,2) disposed onto and beneath the first ferrite sheet unit, wherein third ferrite sheets have no electrode patterns.
Abstract:
다중 대역 세라믹 칩 안테나를 개시한다. 이 다중 대역 세라믹 칩 안테나는 세라믹 유전체를 재료로 하여 직육면체로 형성되는 본체와, 본체 내부에 독립적으로 형성되는 다수의 헬리컬 도체를 포함한다. 다수의 헬리컬 도체는 나선 형상으로 형성된 하나 이상의 메인 헬리컬 도체와, 각 메인 헬리컬 도체 내부에 나선형으로 형성되는 다수의 서브 헬리컬 도체를 포함한다. 각 헬리컬 도체의 나선 회전축은 본체의 밑면과 옆면에 각각 평행하다. 각 헬리컬 도체의 길이 등을 다르게 형성함으로서 각 헬리컬 도체의 사용 주파수 대역이 달라지게 된다. 따라서 다수의 주파수 대역을 사용할 수 있으며, 크기가 작아서 휴대 단말기에 내장이 가능하고, 또한 비교적 넓은 밴드 폭을 갖는다.
Abstract:
PURPOSE: A high frequency condenser for ceramic laminated module is provided to improve the capacitance characteristics and the high frequency characteristics by minimizing the condenser area and by reducing the signal transmission distance by the via contact. CONSTITUTION: The high frequency condenser for ceramic laminated module has the via contacts(18) on the center of the electrode patterns(10a,10b,10c,10d) and omits the pad of the electrode patterns. The multiple electrode patterns are connected alternatively. The electrode pattern has the square shaped plane structure where the capacitance is charged on that area and two holes on the center position of each electrode pattern. One hole of each electrode pattern is alternatively connected to the holes of adjacent electrode patterns, and the other hole of each electrode pattern is connected to the insulator pattern. The insulator patterns(14a,14b,14c,14d) are laminated between electrode patterns. The via holes(16a,16b,16c,16d) are formed on each insulator pattern and on each electrode pattern. All via holes are filled by conductive material to form the via contact.