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公开(公告)号:DE68929356D1
公开(公告)日:2002-01-24
申请号:DE68929356
申请日:1989-06-05
Applicant: CANON KK
Inventor: TERASHIMA SHIGERU , AMEMIYA MITSUAKI , SHIMODA ISAMU , UZAWA SHUNICHI , KARIYA TAKAO
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公开(公告)号:DE3752064D1
公开(公告)日:1997-06-19
申请号:DE3752064
申请日:1987-09-10
Applicant: CANON KK
Inventor: SUZUKI AKIRA , TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
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公开(公告)号:DE68927364T2
公开(公告)日:1997-03-06
申请号:DE68927364
申请日:1989-08-31
Applicant: CANON KK
Inventor: SAKAMOTO EIJI , HARA SHINICHI , SHIMODA ISAMU , UZAWA SHUNICHI
IPC: G03F7/20 , H01L21/027 , H01L21/30 , H01L21/683 , H01L21/00
Abstract: A wafer chuck (2) usable with a semiconductor exposure apparatus (Fig.2A) wherein a mask and a semiconductor wafer (1) are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer (1) is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer (1). The wafer (1) is first attracted on the wafer supporting surface of the chuck (2) by vacuum attraction (21), and thereafter, the wafer (1) is attracted by electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying (24) a gas. Preferably Helium or other thermally conductive gas is admitted at this point. When the pattern of the mask is transferred onto the wafer (1), the wafer (1) is retained on the wafer supporting surface (20) by the electrostatic attraction force only. By this, the wafer supporting apparatus can correctly contact the wafer supporting surface (20) to the wafer (1) without being influenced by the undulation of the wafer (1). In addition, the heat produced in the wafer (1) during exposure can be removed efficiently by temperature controlled (23) water (11) supplied to the wafer supporting apparatus (2).
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公开(公告)号:DE68926873T2
公开(公告)日:1996-12-12
申请号:DE68926873
申请日:1989-10-04
Applicant: CANON KK
Inventor: TANAKA YUTAKA , MIZUSAWA NOBUTOSHI , AMEMIYA MITSUAKI , KARIYA TAKAO , SHIMODA ISAMU
IPC: G21K5/00 , G03F7/20 , H01L21/027 , H01L21/30
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公开(公告)号:DE68925604T2
公开(公告)日:1996-07-11
申请号:DE68925604
申请日:1989-09-04
Applicant: CANON KK
Inventor: UDA KOJI , TANAKA YUTAKA , MORI TETSUZO , SHIMODA ISAMU , UZAWA SCHUNICHI
IPC: H05H13/04 , G03F7/20 , H01L21/027 , H01L21/30
Abstract: Synchrotron orbital radiation (SOR) exposure system includes a SOR ring (8) and a plurality (15a-15c) of exposure apparatus each being coupled to the SOR ring and being arranged to expose a wafer to a mask pattern with X-rays contained in synchrotron radiation from the SOR ring (8) to thereby print the mask pattern on the wafer. Specific arrangement is provided to allow communication of a control of the SOR ring and respective controls of the exposure apparatuses. If any abnormality such as vacuum leakage occurs in one exposure apparatus, the information is transmitted to all the controls to start, in all the exposure apparatuses, appropriate operations to protect the exposure apparatuses against the abnormality. This makes it possible to prevent stoppage of the SOR exposure system as a whole even when any abnormality occurs in one exposure apparatus.
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公开(公告)号:DE68925605D1
公开(公告)日:1996-03-21
申请号:DE68925605
申请日:1989-09-06
Applicant: CANON KK
Inventor: KAWAKAMI EIGO , OZAWA KUNITAKA , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI
IPC: G03F7/20 , H01L21/027 , H01L21/30 , G03F9/00 , H01L21/00
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公开(公告)号:DE3750936T2
公开(公告)日:1995-05-18
申请号:DE3750936
申请日:1987-07-03
Applicant: CANON KK
Inventor: TSUKAMOTO TAKEO , SHIMIZU AKIRA , SUZUKI AKIRA , SUGATA MASAO , SHIMODA ISAMU , OKUNUKI MASAHIKO
Abstract: An electron emitting device for causing electron emission from a high resistance film by a current supply therein, wherein said high resistance film is composed of an agglomerate of fine metal particles having small gaps therebetween, characterized in that the size of said particles and the size of the gaps therebetween are relatively uniform.
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公开(公告)号:DE68919179T2
公开(公告)日:1995-03-30
申请号:DE68919179
申请日:1989-08-31
Applicant: CANON KK
Inventor: ABE NAOTO , UDA KOJI , SHIMODA ISAMU , UZAWA SHUNICHI , NOSE NORIYUKI
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公开(公告)号:DE3850996T2
公开(公告)日:1994-12-15
申请号:DE3850996
申请日:1988-04-27
Applicant: CANON KK
Inventor: OKUNUKI MASAHIKO , SHIMODA ISAMU , MIYAWAKI MAMORU , TSUKAMOTO TAKEO , SUZUKI AKIRA , KANEKO TETSUYA , TAKEDA TOSHIHIKO , SEKI MITSUAKI
IPC: H01J37/30 , H01J37/317
Abstract: A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece (WF) having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source CAD, PG, MU, ML) having stored therein a data related to the circuit pattern, a plurality of charged-particle beam producing sources (ES0-ES15) for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes (X1,X2,Y1, Y2) each being provided for corresponding one of the charged-particle beam producing sources, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.
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公开(公告)号:DE3850996D1
公开(公告)日:1994-09-15
申请号:DE3850996
申请日:1988-04-27
Applicant: CANON KK
Inventor: OKUNUKI MASAHIKO , SHIMODA ISAMU , MIYAWAKI MAMORU , TSUKAMOTO TAKEO , SUZUKI AKIRA , KANEKO TETSUYA , TAKEDA TOSHIHIKO , SEKI MITSUAKI
IPC: H01J37/30 , H01J37/317
Abstract: A charged-particle beam pattern drawing apparatus for drawing, by use of a charged-particle beam, a desired circuit pattern on a workpiece (WF) having a surface coated with a sensitive material, is disclosed. The apparatus includes a data source CAD, PG, MU, ML) having stored therein a data related to the circuit pattern, a plurality of charged-particle beam producing sources (ES0-ES15) for emitting charged-particle beams toward the workpiece, in accordance with the data supplied thereto from the data source, and a plurality of deflecting electrodes (X1,X2,Y1, Y2) each being provided for corresponding one of the charged-particle beam producing sources, for deflecting the charged-particle beams from the charged-particle beam producing sources independently of each other and in accordance with the data supplied from the data source.
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